PZT3904,115 Allicdata Electronics
Allicdata Part #:

568-1182-2-ND

Manufacturer Part#:

PZT3904,115

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: NXP USA Inc
Short Description: TRANS NPN 40V 0.2A SOT-223
More Detail: Bipolar (BJT) Transistor NPN 40V 200mA 300MHz 1.05...
DataSheet: PZT3904,115 datasheetPZT3904,115 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Transistor Type: NPN
Current - Collector (Ic) (Max): 200mA
Voltage - Collector Emitter Breakdown (Max): 40V
Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Power - Max: 1.05W
Frequency - Transition: 300MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Supplier Device Package: SOT-223
Base Part Number: PZT3904
Description

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Introduction: PZT3904, 115 is a single transistor used for transistors - Bipolar (BJT). It can be used for both analog and digital applications and is applicable for switching, amplification and signal processing purposes. It is a Type I-IV transistor and its leads are connected to the power supply through the collector and the base.

Application fields: PZT3904, 115 is used in a variety of applications, including amplifier and signal amplifier chips, telecommunications circuits and oscillators. It can also be used to obtain particular signal waveforms, such as wave shaper circuits, pulse rate circuits and pulse generator circuits. The transistor is also used in motor control and power converter/inverter circuits.

Working principle: When a voltage is applied, the collector voltage will rise and the electrons flow through the base, creating a current. This current, in turn, will increase the collector current. The rise in current will cause the collector voltage to drop and the collector-emitter voltage (Vce) will decrease. This change in voltage is known as the transconductance of the transistor, which is usually expressed as gain, and this gain is proportional to the voltage applied to the base. The change in voltage will also affect the voltage across the base-emitter diode, which will increase, which will decrease the current through the base.

Also, the rise in collector current will cause the collector-base junction to become more strongly reverse-biased, which will reduce the current flow through the base, thereby allowing the circuit to contain less current than it normally would. Because the collector voltage is dropping, the base-emitter voltage (Veb) will increase, thereby increasing the magnitude of the current flowing through the transistor.

Due to this change in the transistor’s current flow, the collector-emitter junction will become more forward-biased, causing a larger current flow through the collector. This result is known as the Early effect, which increases the current gain of the transistor, allowing it to perform switching, amplification and frequency (bandwidth) control.

Conclusion: PZT3904, 115 is a single transistor used for transistors - Bipolar (BJT). It can be used for both analog and digital applications and is applicable for switching, amplification and signal processing purposes. It has a variety of applications, including amplifier and signal amplifier chips, telecommunications circuits, oscillators, motor control and power converter/inverter circuits. When a voltage is applied, the collector voltage will rise, allowing the current through the base to increase, causing the collector-emitter voltage to decrease, resulting in the transistor’s gain increasing. It also results in the Early effect, where the current gain of the transistor will also increase, allowing for switching, amplification and frequency control.

The specific data is subject to PDF, and the above content is for reference

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