Allicdata Part #: | 568-1182-2-ND |
Manufacturer Part#: |
PZT3904,115 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | NXP USA Inc |
Short Description: | TRANS NPN 40V 0.2A SOT-223 |
More Detail: | Bipolar (BJT) Transistor NPN 40V 200mA 300MHz 1.05... |
DataSheet: | PZT3904,115 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 200mA |
Voltage - Collector Emitter Breakdown (Max): | 40V |
Vce Saturation (Max) @ Ib, Ic: | 200mV @ 5mA, 50mA |
Current - Collector Cutoff (Max): | 50nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 100 @ 10mA, 1V |
Power - Max: | 1.05W |
Frequency - Transition: | 300MHz |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-261-4, TO-261AA |
Supplier Device Package: | SOT-223 |
Base Part Number: | PZT3904 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
Introduction: PZT3904, 115 is a single transistor used for transistors - Bipolar (BJT). It can be used for both analog and digital applications and is applicable for switching, amplification and signal processing purposes. It is a Type I-IV transistor and its leads are connected to the power supply through the collector and the base.
Application fields: PZT3904, 115 is used in a variety of applications, including amplifier and signal amplifier chips, telecommunications circuits and oscillators. It can also be used to obtain particular signal waveforms, such as wave shaper circuits, pulse rate circuits and pulse generator circuits. The transistor is also used in motor control and power converter/inverter circuits.
Working principle: When a voltage is applied, the collector voltage will rise and the electrons flow through the base, creating a current. This current, in turn, will increase the collector current. The rise in current will cause the collector voltage to drop and the collector-emitter voltage (Vce) will decrease. This change in voltage is known as the transconductance of the transistor, which is usually expressed as gain, and this gain is proportional to the voltage applied to the base. The change in voltage will also affect the voltage across the base-emitter diode, which will increase, which will decrease the current through the base.
Also, the rise in collector current will cause the collector-base junction to become more strongly reverse-biased, which will reduce the current flow through the base, thereby allowing the circuit to contain less current than it normally would. Because the collector voltage is dropping, the base-emitter voltage (Veb) will increase, thereby increasing the magnitude of the current flowing through the transistor.
Due to this change in the transistor’s current flow, the collector-emitter junction will become more forward-biased, causing a larger current flow through the collector. This result is known as the Early effect, which increases the current gain of the transistor, allowing it to perform switching, amplification and frequency (bandwidth) control.
Conclusion: PZT3904, 115 is a single transistor used for transistors - Bipolar (BJT). It can be used for both analog and digital applications and is applicable for switching, amplification and signal processing purposes. It has a variety of applications, including amplifier and signal amplifier chips, telecommunications circuits, oscillators, motor control and power converter/inverter circuits. When a voltage is applied, the collector voltage will rise, allowing the current through the base to increase, causing the collector-emitter voltage to decrease, resulting in the transistor’s gain increasing. It also results in the Early effect, where the current gain of the transistor will also increase, allowing for switching, amplification and frequency control.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
PZT3906T1 | ON Semicondu... | 0.0 $ | 1000 | TRANS PNP 40V 0.2A SOT223... |
PZT3904,115 | NXP USA Inc | 0.0 $ | 1000 | TRANS NPN 40V 0.2A SOT-22... |
PZT3906,115 | NXP USA Inc | 0.0 $ | 1000 | TRANS PNP 40V 0.1A SOT-22... |
PZT3904_F081 | ON Semicondu... | 0.0 $ | 1000 | IC POWER MANAGEMENTBipola... |
PZT3906 | ON Semicondu... | 0.08 $ | 4000 | TRANS PNP 40V 0.2A SOT223... |
PZT3904 | ON Semicondu... | -- | 1000 | TRANS NPN 40V 0.2A SOT223... |
PZT3906T1G | ON Semicondu... | 0.0 $ | 1000 | TRANS PNP 40V 0.2A SOT223... |
PZT3904T1G | ON Semicondu... | 0.07 $ | 1000 | TRANS NPN 40V 0.2A SOT223... |
GENERAL-PURPOSE TRANSISTORBipolar (BJT) ...
TRANS PNP DARL 30A 120V DIEBipolar (BJT)...
TRANS PNP DARLINGTON DIEBipolar (BJT) Tr...
TRANS GENERAL PURPOSE TO-218Bipolar (BJT...
TRANS PNP 140V 1ABipolar (BJT) Transisto...
TRANS NPN 700V 3A I2PAKBipolar (BJT) Tra...