PZT3906T1G Allicdata Electronics
Allicdata Part #:

PZT3906T1GOS-ND

Manufacturer Part#:

PZT3906T1G

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS PNP 40V 0.2A SOT223
More Detail: Bipolar (BJT) Transistor PNP 40V 200mA 250MHz 1.5W...
DataSheet: PZT3906T1G datasheetPZT3906T1G Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Transistor Type: PNP
Current - Collector (Ic) (Max): 200mA
Voltage - Collector Emitter Breakdown (Max): 40V
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Current - Collector Cutoff (Max): --
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Power - Max: 1.5W
Frequency - Transition: 250MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Supplier Device Package: SOT-223
Base Part Number: PZT3906
Description

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Introduction

PZT3906T1G (SFH3906T1G) is a kind of NPN bipolar junction transistor, which belongs to the “Transistors - Bipolar (BJT) - Single” category. It has low voltage and is widely used in various time domains. This article mainly introduces the application field and working principle of PZT3906T1G.

Application Field

PZT3906T1G is widely applied as an amplification device in many fields such as switching, impedance matching, on/off control and so on. This device can be used to drive serially connected light-emitting gates, as well as small lamps, or as DC lamps and other lighting devices.

Additionally, PZT3906T1G can be used for switching input signals, impedance matching circuits and small DC motors. It is also extensively used in motor protection instruments, communication interface control equipment, instrumentation control, and other control fields in the industry.

Working principle

PZT3906T1G is usually used with N-type and P-type semiconductor materials, which are respectively connected with the base and collector connections. Meanwhile, when the voltage is applied to the base, ions of the semiconductor material will be filled with the collector. This would cause an electric current to pass through the collector.

Because the ions of semiconductor material of the collector are fixed when the electric current runs through, this will further enable the collection of electrons from the base to be conducted directly to the collector. This process makes the load current to be controlled by the base current and voltage.

Moreover, since PZT3906T1G has a low working voltage, it has obvious advantages compared with high power transistors, such as no need of extra power supply materials or costly current halving causes. These properties enable PZT3906T1G to become a preferred part when making transistors with low power.

Conclusion

PZT3906T1G is a kind of NPN bipolar junction transistor, which belongs to the Transistors - Bipolar (BJT) - Single category. It has low voltage and is widely used in various time domains, such as switching, impedance matching, on/off control, along with driving serially connected light-emitting gates, lamps, DC lamps and other lighting devices. It works under a low voltage, and is also able to be used for switching input signals, impedance matching circuits and small DC motors. The working principle is that when applying a voltage to the base, ions of the semiconductor material will be filled with the collector, enabling the collection of electrons from the base to be conducted directly to the collector and control the load current.

The specific data is subject to PDF, and the above content is for reference

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