QS8K13TCR

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
FET Type:	2 N-Channel (Dual)
FET Feature:	Standard
Drain to Source Voltage (Vdss):	30V
Current - Continuous Drain (Id) @ 25°C:	6A
Rds On (Max) @ Id, Vgs:	28 mOhm @ 6A, 10V
Vgs(th) (Max) @ Id:	2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:	20nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:	390pF @ 10V
Power - Max:	550mW
Operating Temperature:	150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	8-SMD, Flat Lead
Supplier Device Package:	TSMT8

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QS8K13TCR is a complementary MOSFET array designed for power supply and amplifier applications. Consisting of two N-channel and two P-channel MOSFETs, the device provides high-current switching capability from a minimum of four external components. It is designed using advanced trench MOSFET technology which provides low drain-source on resistance (RDS(on)) and fast switching speeds. QS8K13TCR has a VdsS rating of 800V, making it suitable for automotive, home appliances and power conversion applications. It also features low gate charge Qg, maximum continuous drain current Id of 40A and maximum Watts dissipation of 200W. These features make it suitable for applications such as DC/DC converters, uninterruptible power supplies, class-D audio amplifiers and automotive HVAC systems.The working principle of QS8K13TCR is based on the operation of MOSFETs. It uses two N-channel MOSFETs as the load switch, and two P-channel MOSFETs connected in series to form an H-bridge. The N-channel MOSFETs are used between the Gate and Source to reduce the voltage going to the Gate so that the turn-on voltage for the P-channel MOSFETs can be significantly lower than their Vth. When the Gate voltage is greater than the Vth, the P-channel MOSFETs conduct current from the drain to the source. To ensure reliable performance, the device features temperature and overload protection. The overload protection circuitry is designed to limit maximum current and power dissipation in the device and disable the Gate drive when the current limit is reached. The thermal protection circuitry will also turn off the Gate drive to prevent damage due to excessive junction temperature. Overall, QS8K13TCR is a powerful and cost-efficient power switch solution suitable for a variety of applications. It provides fast switching speeds, low drain-source on-resistance, temperature and overload protection, and low gate charge. With its robust package, the device is able to withstand operating temperature up to 175°C.

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