Allicdata Part #: | QS8K51TR-ND |
Manufacturer Part#: |
QS8K51TR |
Price: | $ 0.39 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ROHM Semiconductor |
Short Description: | MOSFET 2N-CH 30V 2A TSMT8 |
More Detail: | Mosfet Array 2 N-Channel (Dual) 30V 2A Surface Mo... |
DataSheet: | QS8K51TR Datasheet/PDF |
Quantity: | 1000 |
3000 +: | $ 0.34486 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Not For New Designs |
FET Type: | 2 N-Channel (Dual) |
FET Feature: | -- |
Drain to Source Voltage (Vdss): | 30V |
Current - Continuous Drain (Id) @ 25°C: | 2A |
Rds On (Max) @ Id, Vgs: | -- |
Vgs(th) (Max) @ Id: | -- |
Gate Charge (Qg) (Max) @ Vgs: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | -- |
Power - Max: | -- |
Operating Temperature: | -- |
Mounting Type: | Surface Mount |
Package / Case: | 8-SMD, Flat Lead |
Supplier Device Package: | TSMT8 |
Base Part Number: | *K51 |
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QS8K51TR is a new type of semiconductor device, commonly referred as a saturable-gate FET array. It contains eight field effect transistors (FETs) with their gates connected in parallel, so that a single control gate can be used to control the on and off state of each FET. It is specifically designed to be used in high voltage applications and its main advantage lies in its low power consumption.
The working principle of QS8K51TR can be divided into four parts. The first part is the threshold voltage of the FETs. When voltage is applied to the control gate, the FETs turn on when their source and drain voltages are between the threshold voltage and certain maximum values. The second part is the current flow through the FETs. This is determined by the applied voltage across the source and drain terminals. The third part is the current gain of the FETs, which depends on the applied gate voltage. This means that if the gate voltage is increased, the current gain is increased, and the current passing through the FETs is increased. The fourth part is the output resistance of the FETs, which determines the output voltage of the FETs. This is determined by the interaction between the threshold voltage and the applied gate voltage.
QS8K51TR has a wide range of applications in industrial, commercial, and consumer electronic devices. In power electronics, the FET array can be used in H-bridge circuits and power converters, where a single control gate can be used to switch the bridge on and off. This device can also be used to regulate the output voltage of power supplies, as well as controlling DC-DC voltage converters. In telecommunications, the FET array can be used to control the supply voltages in radio transmitters and receivers.
In communication electronics, the FET array can be used in switching and modulating circuits, as well as providing frequency modulation in radio receivers. The array can also be used to control the output voltage of small signal amplifiers used in computer networks and communication systems. In automotive applications, the FET array can be used in motor control circuits and switch mode power supplies, as well as controlling the energy flow through integrated circuits in automotive computers.
QS8K51TR is a very versatile device, capable of providing fast switching times, low power consumption and reliable operation. It is widely used in many different types of electronics, as it is a cost-effective solution for many applications. The device is now available from a variety of manufacturers, and is a must-have in any electronics engineer’s toolkit.
The specific data is subject to PDF, and the above content is for reference
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