QSH29TR Discrete Semiconductor Products

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QSH29TR is a Pre-Biased Bipolar Junction Transistor (BJT) Array used in various electronics applications. It consists of four NPN+PNP transistors in a single package, and is designed to offer high performance in applications such as power switching and oscillator circuits. In addition to its small size, this device also has low power dissipation - typically 30 mW/per transistor.

The device offers a wide range of features that make it suitable for various applications, including: high current gain (typically 200), high voltage transistors for up to 300 V, fast switching times, high linearity, low input and output capacitance, and low junction capacitance. The device also has an integrated thermal overload protection feature, which helps protect it from excessive junction temperatures.

The device also has built-in frequency compensation, which allows the user to reduce the effects of temperature and supply voltage changes on the performance of the device. This is helpful in reducing noise in the circuit and increasing system efficiency.

The QSH29TR is often used in power control applications because of its ability to handle high current without significant power dissipation. Its fast switching speed means that it can respond quickly to changing loads and deliver high current when it is needed. Additionally, its high voltage capability is also useful in power circuit designs, as it can help to reduce voltage drops and increase efficiency.

The QSH29TR’s working principle is based on an NPN transistor connected in an array of four transistors to form an NPN-PNP pair. This arrangement enables the device to have both high and low current capabilities, and it is this ability that makes it suitable for power control applications. For example, the device can be used in a circuit to regulate the current flow to a load, or it can be used to switch on and off different power devices.

The QSH29TR is a popular choice for many applications because of its small size, low power dissipation, and wide range of features. The device is also widely used in embedded electronic applications, as it is capable of operating at temperatures as low as -40°C and providing reliable performance, regardless of the application.

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