RB068LAM-40TFTR Allicdata Electronics

RB068LAM-40TFTR Discrete Semiconductor Products

Allicdata Part #:

RB068LAM-40TFTR-ND

Manufacturer Part#:

RB068LAM-40TFTR

Price: $ 0.09
Product Category:

Discrete Semiconductor Products

Manufacturer: ROHM Semiconductor
Short Description: AUTOMOTIVE SCHOTTKY BARRIER DIOD
More Detail: Diode Schottky 40V 2A Surface Mount PMDTM
DataSheet: RB068LAM-40TFTR datasheetRB068LAM-40TFTR Datasheet/PDF
Quantity: 3000
3000 +: $ 0.08004
Stock 3000Can Ship Immediately
$ 0.09
Specifications
Series: Automotive, AEC-Q101
Packaging: Tape & Reel (TR) 
Part Status: Active
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40V
Current - Average Rectified (Io): 2A
Speed: Fast Recovery = 200mA (Io)
Current - Reverse Leakage @ Vr: 1µA @ 40V
Capacitance @ Vr, F: --
Mounting Type: Surface Mount
Package / Case: SOD-128
Supplier Device Package: PMDTM
Operating Temperature - Junction: 150°C (Max)
Description

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Diodes - Rectifiers - Single

The RB068LAM-40TFTR is a single rectifier diode from the series of general-purpose rectifier diodes from ON Semiconductor. This series of rectifier diodes are used in a wide variety of industries from aerospace and military to industrial, automotive and consumer applications. These rectifiers offer low forward voltage drop and high efficiency. With an ultra-low leakage current, these rectifiers are ideal for use in applications such as motor control, power factor correction, power supplies, voltage regulation, automotive and lighting applications.

The RB068LAM-40TFTR has a forward current rating of 3.5 A and a peak current rating of 6 A. It has a voltage drop of 0.6 V at a load current of 1 A and a junction temperature of 125°C. It is available in a DO-41 package, which is an epoxy molded plastic body with tin-plated lead frame. This device has a typical reverse recovery time of 125 ns and reverse leakage current of 1 μA.

The working principle of RB068LAM-40TFTR devices is based on the Dreling effect, in which, when current flows through the diode, there is a built-up electric field within the semiconductor, and this field blocks the current flowing in the reverse direction. This effect is similar to that of a regular diode, in which current does not flow in the reverse direction. When the diode is forward biased, the current flows through the diode in the forward direction. This current is determined by the electrical resistance of the diode. When the diode is reverse biased, no current flows through the diode. This is because the built-up electric field blocks the current in the reverse direction.

Overall, the RB068LAM-40TFTR is a single rectifier diode that is designed to offer low forward voltage drop and high efficiency. It is used in a wide range of applications, from consumer electronics to military and aerospace, and its wide operating and storage temperature ranges make it a reliable and cost-effective solution for all types of rectifier applications. Its wide range of specifications, including low forward voltage drop, high efficiency, ultra-low leakage current, low reverse recovery time, and a wide temperature range, make it a reliable and cost-effective solution for a variety of rectifier applications.

The specific data is subject to PDF, and the above content is for reference

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