RB068LAM-40TR Discrete Semiconductor Products |
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Allicdata Part #: | RB068LAM-40TR-ND |
Manufacturer Part#: |
RB068LAM-40TR |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ROHM Semiconductor |
Short Description: | DIODE SCHOTTKY 40V 2A PMDTM |
More Detail: | Diode Schottky 40V 2A Surface Mount PMDTM |
DataSheet: | RB068LAM-40TR Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Schottky |
Voltage - DC Reverse (Vr) (Max): | 40V |
Current - Average Rectified (Io): | 2A |
Voltage - Forward (Vf) (Max) @ If: | 690mV @ 2A |
Speed: | Fast Recovery = 200mA (Io) |
Current - Reverse Leakage @ Vr: | 1µA @ 40V |
Capacitance @ Vr, F: | -- |
Mounting Type: | Surface Mount |
Package / Case: | SOD-128 |
Supplier Device Package: | PMDTM |
Operating Temperature - Junction: | 150°C (Max) |
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Diodes, one of the most important electronic components, are among the most versatile components in their respective instances. RB068LAM-40TR is a single, rectifier type diode designed for specialized applications.
The RB068LAM-40TR is a device with a reversing voltage of 40V and a maximum reverse current of 68mA. It is rated at a peak repetitive reverse voltage (PRV) of -50V, a maximum repetitive forward current (IFRM) of 1A and a maximum forward voltage of 1.3V. The RB068LAM-40TR has a maximum noise level of 0.2A and a maximum thermal resistance junction to ambient of 0.4K/W.
This device typically finds application in switching and linear voltage regulator series (LVRs). It is also widely used to provide buffering, Rectification, and Voltage Regulation for a variety of different electronics applications, such as radio receivers. This type of diode is useful for suppressing radio frequency or high voltage spikes.
RB068LAM-40TR diode operates in accordance with the following principles. First, the diode has to tolerate the applied voltages and currents. The junction of the diode has to remain within its specified limits, which are set by device manufacturer. Second, the conduction of current should occur between the anode and the cathode. It is due to the formation of a negative space charge layer. This layer prevents the forward current from flowing until the external voltage overcomes the built-in barrier potential formed across the PN junction.
Third, the voltage across the PN junction is highly temperature dependent. As the temperature increases, the PN junction potential decreases, resulting in increased current flow. This is why manufacturers specify suitable temperature limits for the operation of their diodes.
Finally, another phase of diode operation known as \'clamping\' is caused by the presence of trapped carriers within the space charge region. When a negative voltage is applied across the diode, it can be clamped to limit the maximum voltage to a fraction of its total breakdown voltage.
RB068LAM-40TR is a single, rectifier type diode designed for specialized applications. It finds application in switching, linear voltage regulator series (LVRs), radio receivers, and other electrical equipment. Its working principle is based on the concept of reverse biased PN junction, which is responsible for its conduction and voltage clamping. RB068LAM-40TR also has a wide range of temperature specifications, making it suitable for use in various temperature conditions.
The specific data is subject to PDF, and the above content is for reference
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