Allicdata Part #: | RB550VAM-30TRTR-ND |
Manufacturer Part#: |
RB550VAM-30TR |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ROHM Semiconductor |
Short Description: | DIODE SCHOTTKY 30V 1A TUMD2M |
More Detail: | Diode Schottky 30V 1A Surface Mount TUMD2M |
DataSheet: | RB550VAM-30TR Datasheet/PDF |
Quantity: | 1000 |
Specifications
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Schottky |
Voltage - DC Reverse (Vr) (Max): | 30V |
Current - Average Rectified (Io): | 1A |
Voltage - Forward (Vf) (Max) @ If: | 520mV @ 1A |
Speed: | Fast Recovery = 200mA (Io) |
Current - Reverse Leakage @ Vr: | 30µA @ 10V |
Capacitance @ Vr, F: | -- |
Mounting Type: | Surface Mount |
Package / Case: | 2-SMD, Flat Lead |
Supplier Device Package: | TUMD2M |
Operating Temperature - Junction: | 150°C (Max) |
Description
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The RB550VAM-30TR is a single phase, low voltage, low cost, ultrafast recovery diode designed for use in high frequency switch-mode power supplies and other applications where fast reverse recovery time is desired. It is designed to operate at temperatures up to +175°C with a minimum reverse recovery time of only 500ns. The RB550VAM-30TR is available in TO-220AC, TO-263AB and TO-269F packages with peak reverse voltage ratings between 10V and 30V.
Advantages of RB550VAM-30TR
- Low voltage rating and fast reverse recovery time
- High temperature operation up to +175°C
- Available in TO-220AC, TO-263AB and TO-269F packages
Application Fields of RB550VAM-30TR
The RB550VAM-30TR is used in many applications, including switching mode power supplies and other high frequency applications where a fast reverse recovery time is desired. In addition, it is also suitable for use as a battery diode, output clamp diodes, and rectifier diodes.Working Principle of RB550VAM-30TR
The RB550VAM-30TR is a type of diode that operates in two states: an On state, or Forward biased state, and an Off state, or Reverse biased state. In the On state, the diode allows current to flow in one direction, while in the Off state the diode blocks any current from flowing. In the off state, the diode is reverse biased, meaning the voltage across the diode is opposite to the voltage that was applied in the forward bias state. Once the electric field across the junction is reversed, the electrons and holes in the depletion layer recombine, kicking out a photon. This is known as the recombination process, and it is this process that triggers the recovery time of the diode.The faster the electrons and holes recombine, the faster the diode can enter the reverse bias state and cut off the current flow. The RB550VAM-30TR is designed to allow for fast recovery time, thus less power is wasted in the recovery process and greater efficiency is achieved.Conclusion
The RB550VAM-30TR diode is ideal for high frequency applications or where fast reverse recovery time is required. It is cost effective and efficient, with a low voltage rating and high temperature operation. It is typically used for switching mode power supplies, battery diodes, output clamp diodes, and rectifier diodes. Its fast reverse recovery time allows it to quickly cut off the current flow and thus reduce power dissipation and improve efficiency.The specific data is subject to PDF, and the above content is for reference
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