RB558WTL Discrete Semiconductor Products |
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Allicdata Part #: | RB558WTLTR-ND |
Manufacturer Part#: |
RB558WTL |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ROHM Semiconductor |
Short Description: | DIODE ARRAY SCHOTTKY 30V EMD3 |
More Detail: | Diode Array 1 Pair Series Connection Schottky 30V ... |
DataSheet: | RB558WTL Datasheet/PDF |
Quantity: | 21000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Not For New Designs |
Diode Configuration: | 1 Pair Series Connection |
Diode Type: | Schottky |
Voltage - DC Reverse (Vr) (Max): | 30V |
Current - Average Rectified (Io) (per Diode): | 100mA |
Voltage - Forward (Vf) (Max) @ If: | 490mV @ 100mA |
Speed: | Small Signal = |
Current - Reverse Leakage @ Vr: | 10µA @ 10V |
Operating Temperature - Junction: | 125°C (Max) |
Mounting Type: | Surface Mount |
Package / Case: | SC-75, SOT-416 |
Supplier Device Package: | EMD3 |
Base Part Number: | RB558WTL |
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The RB558WTL is a silicon single array rectifier designed for general purpose rectification applications. It is a high-performance, surface-mount rectifier array with a plethora of features including a positive temperature coefficient output voltage, a high power dissipation, low forward voltage drop, and low reverse leakage current. The unique design of the RB558WTL facilitates a wide variety of rectification applications such as reverse polarity protection, power switching, and voltage multiplier circuits.
The RB558WTL is a single array rectifier integrated circuit (IC) based on a Silicon Carbide (SiC) junction field effect transistor (JFET) technology. Its structure consists of up to eight read channels linked together via a single drain terminal. Each channel contains two series-connected diodes in an "H" configuration. The combined effect of the two series-connected diodes is to provide a greater forward current carrying capability, higher forward voltage drop, and a lower reverse leakage current than typical diode configurations.In terms of operating principles, the RB558WTL rectifier operates by creating a PN junction between the two base terminals and the output terminal. When a forward bias voltage is applied to the anode terminal, the two base terminal will also be biased and electrons will flow from the anode to the cathode. This flow of electrons occurs in the direction opposite to the conventional electron flow and is referred to as minority carrier injection.In operation, the RB558WTL rectifier has a low voltage drop and a low reverse current leakage. The PN junction can be biased with a voltage source to alter the properties of the rectifier\'s forward current conduction. By increasing the forward bias voltage, the forward voltage drop is reduced significantly while the reverse current leakage is also kept very low. In addition, the input and output capacitances of the device are relatively small and do not vary significantly with changes in bias voltage.The RB558WTL’s high-performance PN junction rectifier can be used in a variety of applications such as high efficiency power conversion, polarity protection, high voltage switching, voltage generation, and voltage regulation. It is also suitable for applications such as solar panel and battery charging, automotive power supplies, DC/DC converters, servo motors, and audio signal rectification.In conclusion, the RB558WTL Rectifier is a versatile and high-performance rectifier array with a plethora of features and applications. It can be used for general purpose rectification applications and for a wide variety of other power conversion needs. It is ideal for low-voltage and high-current applications, with its low voltage drop, low reverse leakage current, and reverse polarity protection. All these features combine to make the RB558WTL an excellent choice for rectifier-based applications.
The specific data is subject to PDF, and the above content is for reference
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