RB558VYM150FHTR Allicdata Electronics

RB558VYM150FHTR Discrete Semiconductor Products

Allicdata Part #:

RB558VYM150FHTR-ND

Manufacturer Part#:

RB558VYM150FHTR

Price: $ 0.08
Product Category:

Discrete Semiconductor Products

Manufacturer: ROHM Semiconductor
Short Description: SCHOTTKY BARRIER DIODE (AEC-Q101
More Detail: Diode Schottky 150V 500mA Surface Mount TUMD2M
DataSheet: RB558VYM150FHTR datasheetRB558VYM150FHTR Datasheet/PDF
Quantity: 1000
3000 +: $ 0.06861
Stock 1000Can Ship Immediately
$ 0.08
Specifications
Series: Automotive, AEC-Q101
Packaging: Tape & Reel (TR) 
Part Status: Active
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 150V
Current - Average Rectified (Io): 500mA
Voltage - Forward (Vf) (Max) @ If: 950mV @ 500mA
Speed: Fast Recovery = 200mA (Io)
Reverse Recovery Time (trr): 6.35ns
Current - Reverse Leakage @ Vr: 500nA @ 150V
Capacitance @ Vr, F: --
Mounting Type: Surface Mount
Package / Case: 2-SMD, Flat Lead
Supplier Device Package: TUMD2M
Operating Temperature - Junction: 150°C (Max)
Description

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  • RB558VYM150FHTR Application Field and Working Principle

RB558VYM150FHTR is a high-performance single rectifier diode used in a variety of applications. It is a semiconductor diode that is specifically designed to be used in high-temperature conditions and offers superior performance than traditional technologies. The device has a maximum reverse current of 2mA, a forward voltage of up to 150V, and a reverse recovery time of 1μs. This makes it ideal for applications that require high-speed performance and extended temperature ranges.

The RB558VYM150FHTR is widely used in automotive and industrial systems for rectification and can be used in a variety of other applications. Typical applications include automotive, power conversion, UPS systems, solar energy systems, battery chargers, and medical systems. Its high-performance and superior reverse voltage current handling capabilities make it a great choice for many applications.

Working Principle

The RB558VYM150FHTR uses a P–N junction semiconductor diode in order to rectify AC or DC signals. This rectification process involves converting alternating current or direct current power into pulsating DC voltage. The RB558VYM150FHTR has a reverse breakdown voltage of 2 V, and its breakdown voltage determines the maximum voltage level that can be tolerated by the diode.

The RB558VYM150FHTR also features high thermal resistance, enabling it to be used for high-temperature applications. The diode has a maximum operating temperature of +150°C, a typical thermal resistance of 20°C/W, and a maximum thermal resistance of 500°C/W when mounted on a metal-core PCB. The device also offers a wide operating range of −55°C to +150°C and has an exceptional frequency range from 0-100MHz.

The RB558VYM150FHTR diode utilizes a junction structure so that when forward biased, current flows through the device and when reverse voltage is applied, the diode blocks current and prevents any current from passing through. When the junctions are forward biased and current is allowed to pass through the diode, a phenomenon known as reverse recovery time occurs. This is the time period in which the junction blocks the current and takes to recover. The RB558VYM150FHTR features a reverse recovery time of 1μs, making it an ideal choice for high-speed switching applications.

In conclusion, the RB558VYM150FHTR is a high-performance single rectifier diode used in applications including automotive and industrial systems for rectification. It has a maximum reverse current of 2mA, a forward voltage of up to 150V, and a reverse recovery time of 1μs. The device has a wide operating range of −55°C to +150°C and offers superior performance compared to traditional technologies, making it a great choice for many applications.

The specific data is subject to PDF, and the above content is for reference

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