Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
Diode Type:	Schottky
Voltage - DC Reverse (Vr) (Max):	30V
Current - Average Rectified (Io):	30mA (DC)
Voltage - Forward (Vf) (Max) @ If:	370mV @ 1mA
Speed:	Small Signal =
Current - Reverse Leakage @ Vr:	500nA @ 30V
Capacitance @ Vr, F:	2.5pF @ 1V, 1MHz
Mounting Type:	Surface Mount
Package / Case:	SC-79, SOD-523
Supplier Device Package:	SOD-523
Operating Temperature - Junction:	-55°C ~ 150°C
Base Part Number:	RB751S40

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Overview

The RB751S40T1G is a fast switching small package silicon MOSFET that has the capability of switching high surge current for high power density applications. With a low gate charge and low gate-source capacitance, it can effectively reduce system switching losses and increase system efficiency. This fast-switching device has a low on-resistance (RDSon), reducing conduction loss and enabling compact designs. It has a low gate threshold voltage (VGS) for easy control of both positive and negative voltage switching.The RB751S40T1G also features a high temperature limit of 175°C, making it suitable for use in high temperature applications.

Application Fields & Working Principles

The RB751S40T1G can be widely used in a broad range of applications. It can be used in high power density end-applications because it is capable of switching high surge currents. It can also be used in high temperature applications since it has a temperature limit of 175°C.In addition, this device can be used in applications such as power management, portable RF transmitters/receivers, automotive infotainment systems and motor control.The RB751S40T1G works on the principle of a diode rectifier. This means that when a voltage is applied to one end of the component, current will flow in the same direction. The current then passes through the component and out the other end. The component acts like a two-way valve, allowing the current to flow in one direction and not in the other. This is what makes the device suitable for use in a variety of applications. In order to control the current that flows through the component, the gate voltage (VGS) is applied. If the voltage exceeds the threshold voltage then the device will be switched on and the current will flow. If the voltage is reduced then the device will be switched off and the current will stop flowing.

Conclusion

The RB751S40T1G is a fast-switching small package silicon MOSFET with a low gate charge and low gate-source capacitance, making it suitable for a wide range of applications. It can be used in high power density end-applications, and also in applications such as power management, portable RF transmitters/receivers, automotive infotainment systems and motor control.This device works on the principle of diode rectification, where a voltage is applied to one end of the component to allow current to flow in the same direction. The current can then be controlled by adjusting the gate voltage (VGS).The RB751S40T1G is a versatile and reliable option for a variety of applications.

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