RB751S40T5G Discrete Semiconductor Products |
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Allicdata Part #: | RB751S40T5GOSTR-ND |
Manufacturer Part#: |
RB751S40T5G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | DIODE SCHOTTKY 40V 30MA SOD523 |
More Detail: | Diode Schottky 40V 30mA (DC) Surface Mount SOD-523 |
DataSheet: | RB751S40T5G Datasheet/PDF |
Quantity: | 8000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Schottky |
Voltage - DC Reverse (Vr) (Max): | 40V |
Current - Average Rectified (Io): | 30mA (DC) |
Voltage - Forward (Vf) (Max) @ If: | 370mV @ 1mA |
Speed: | Small Signal = |
Current - Reverse Leakage @ Vr: | 500nA @ 30V |
Capacitance @ Vr, F: | -- |
Mounting Type: | Surface Mount |
Package / Case: | SC-79, SOD-523 |
Supplier Device Package: | SOD-523 |
Operating Temperature - Junction: | -55°C ~ 150°C |
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Diodes - Rectifiers - Single is a category focused on single rectifier diodes that are used for many applications. RB751S40T5G is the type of single rectifier diode that can be found in this category. It is mainly used for rectification purposes and relevant applications from the high-power industrial sector.
RB751S40T5G diodes are made of silicon material that can sustain and endure high temperatures. It is designed with a maximum operating temperature of 125℃ and can be used at high temperatures with no effect on the performance. It has a maximum surge current of 1,000 A and can bear up to a repetitive peak reverse voltage of 40V. It is one of the most commonly used single rectifier diodes.
RB751S40T5G has a wide range of application field and is ideal for use in a variety of applications. It can be used in power supplies, converters, and surge protection circuit, among many other. It can also be used in domestic appliances such as air conditioners, fans, washing machines, and others. In industrial and automotive applications, it can also be used for rectification, DC/DC converters, inverters, and AC power supplies. In addition, it can be used in lighting fixtures and fixtures and other applications that require high currents.
The working principle of RB751S40T5G diodes is based on the PN junction diode and its rectification effect. The PN junction is basically composed of two different layers of materials, one electrons and the other made from positive charge. These layers are separated by a barrier (e.g. N-type material layer, P-type material layer). When a voltage is applied to the PN junction, the electric field across the barrier will induce a current to flow, either from the anode to the cathode or from the cathode to the anode, depending on the direction of the applied voltage.
Another important working principle of RB751S40T5G diodes is the junction capacitance. This is caused by the presence of the electric field between the anode and cathode of the device. This capacitance acts as a buffer between the anode and cathode of the device and can reduce the switching time and improve the performance of the device. It is especially beneficial in the applications that require high frequency switching.
In conclusion, RB751S40T5G is a single rectifier diode that has a wide range of application field and is ideal for use in many high-power industrial applications. It is made of silicon material that can sustain and endure high temperatures and has a maximum surge current of 1,000 A. It has a working principle based on the PN junction and its rectification effect as well as a junction capacitance. Due to its wide array of applications and its reliable performance, RB751S40T5G diodes are one of the most commonly used single rectifier diodes available.
The specific data is subject to PDF, and the above content is for reference
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