Allicdata Part #: | RB751V40T1GOSTR-ND |
Manufacturer Part#: |
RB751V40T1G |
Price: | $ 0.04 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | DIODE SCHOTTKY 30V 30MA SOD323 |
More Detail: | Diode Schottky 30V 30mA (DC) Surface Mount SOD-323 |
DataSheet: | RB751V40T1G Datasheet/PDF |
Quantity: | 13594 |
3000 +: | $ 0.02949 |
6000 +: | $ 0.02564 |
15000 +: | $ 0.02180 |
30000 +: | $ 0.02051 |
75000 +: | $ 0.01923 |
150000 +: | $ 0.01667 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Schottky |
Voltage - DC Reverse (Vr) (Max): | 30V |
Current - Average Rectified (Io): | 30mA (DC) |
Voltage - Forward (Vf) (Max) @ If: | 370mV @ 1mA |
Speed: | Small Signal = |
Current - Reverse Leakage @ Vr: | 500nA @ 30V |
Capacitance @ Vr, F: | 2.5pF @ 1V, 1MHz |
Mounting Type: | Surface Mount |
Package / Case: | SC-76, SOD-323 |
Supplier Device Package: | SOD-323 |
Operating Temperature - Junction: | -55°C ~ 150°C |
Base Part Number: | RB751V40 |
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The RB751V40T1G is a silicon-rectifier diode, and it is a single-phase, low-power, high-current diode with a maximum reverse voltage rating of 40 V and a forward current rating of 1 A. It is used in a wide range of applications, including power supplies, dc-dc converters, regulators, and amplifiers. It is also used in power switching and battery charging circuits.
The RB751V40T1G\'s main application area is in AC-DC voltage converters, including power supplies, motors, and appliances. Other applications include linear regulators and dc-dc converters. The device is also popular in general-purpose rectification circuits where low power dissipation and low conduction loss are important. It is also used in overvoltage protection circuits.
The RB751V40T1G is a fast-recovery diode with a fast switching speed and low forward voltage drop. It also has a low leakage current and low noise characteristics, making it ideal for use in high-speed switching circuits. The device is constructed of a silicon plate and a highly efficient diffusion barrier, which prevents electrons from diffusing from the base layer. This makes the device suitable for use in switching circuits operating at high frequencies.
The RB751V40T1G comes in an SOT-23 package, which is small, compact, and easy to use. The diode has a low junction-to- ambient thermal resistance of 0.285 K/W and a high peak current rating of 1 A. The device has a maximum forward voltage drop of 0.5 V at a forward current of 1 A. It also has a reverse recovery time of 3 ns, which is relatively fast.
The working principle of the RB751V40T1G involves forward current flow and rectification. When the device is forward biased, it allows current to flow in one direction. When the device is reverse biased, the current flow is blocked. This behavior is the basis of rectification, which is used to convert an alternating current into direct current. The device is also suitable for use in voltage regulation, allowing it to maintain a constant voltage supply in spite of fluctuations in load current.
The RB751V40T1G is a versatile and dependable silicon-rectifier diode that is used for a wide variety of applications. Its fast switching speed and low forward voltage drop make it ideal for use in power supplies and other power switching and battery charging circuits. Its small size and low thermal resistance make it well-suited for high-frequency applications. The device is also suitable for voltage regulation, allowing it to maintain a constant voltage supply despite fluctuations in load current.
The specific data is subject to PDF, and the above content is for reference
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