RF 1BV1 Allicdata Electronics

RF 1BV1 Discrete Semiconductor Products

Allicdata Part #:

RF1BV1TB-ND

Manufacturer Part#:

RF 1BV1

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Sanken
Short Description: DIODE GEN PURP 800V 600MA AXIAL
More Detail: Diode Standard 800V 600mA Through Hole
DataSheet: RF 1BV1 datasheetRF 1BV1 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Box (TB) 
Part Status: Obsolete
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 800V
Current - Average Rectified (Io): 600mA
Voltage - Forward (Vf) (Max) @ If: 2V @ 1A
Speed: Fast Recovery = 200mA (Io)
Reverse Recovery Time (trr): 400ns
Current - Reverse Leakage @ Vr: 10µA @ 800V
Capacitance @ Vr, F: --
Mounting Type: Through Hole
Package / Case: Axial
Supplier Device Package: --
Operating Temperature - Junction: -40°C ~ 150°C
Description

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RF 1BV1 Application Field and Working Principle

RF 1BV1, or Reflective Field Emission from the Base of the Vertical 1, is a type of field emission device that produces electrons at the extremity of its base. Unlike normal field emitters, RF 1BV1 does not need to be held at a vacuum, making it relatively easy to use and configure. Additionally, the device does not require any fuel or power source for operation, making it highly energy efficient.

RF 1BV1s have a variety of applications across multiple industries and sectors. Common uses include electron beam lithography, coating technology, material processing, and ion implantation. In labs and research settings, RF 1BV1s have been used to study various phenomena, such as thermionic emission and field emission. In the medical industry, these devices have been used for radiation therapy, imaging, and sterilization.

The working principle of the RF 1BV1 is based on the idea of a self-forming emitter. In this type of emitter, electrons are generated through the application of a strong electric field. The intensity of the electric field is determined by the size and shape of the emitter, which is why the shape of RF 1BV1 is pre-determined. When the electric field is applied, electrons are drawn from the base of the device, forming a beam of electrons which can then be directed towards a target.

The electrons generated by the RF 1BV1 device are highly energetic, which means that they can be used for a variety of applications. As mentioned before, these devices are used in labs and research settings for studying various phenomenon. Additionally, they can also be used for lithography, material processing, and ion implantation.

In conclusion, RF 1BV1s are a type of field emission device which can be used for a variety of applications. Utilizing a self-forming emitter, the device produces electrons at the extremity of its base, and due to not requiring any fuel or power source it is highly energy efficient. By utilizing electron beams, RF 1BV1s can be used for lithography, material processing, and ion implantation, among other uses.

The specific data is subject to PDF, and the above content is for reference

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