RF201LAM4STR Allicdata Electronics

RF201LAM4STR Discrete Semiconductor Products

Allicdata Part #:

RF201LAM4STRTR-ND

Manufacturer Part#:

RF201LAM4STR

Price: $ 0.11
Product Category:

Discrete Semiconductor Products

Manufacturer: ROHM Semiconductor
Short Description: DIODE GEN PURP 400V 1.5A PMDTM
More Detail: Diode Standard 400V 1.5A Surface Mount PMDTM
DataSheet: RF201LAM4STR datasheetRF201LAM4STR Datasheet/PDF
Quantity: 3000
3000 +: $ 0.10003
6000 +: $ 0.09396
15000 +: $ 0.08790
30000 +: $ 0.08063
Stock 3000Can Ship Immediately
$ 0.11
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 1.5A
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 1.5A
Speed: Fast Recovery = 200mA (Io)
Reverse Recovery Time (trr): 30ns
Current - Reverse Leakage @ Vr: 1µA @ 400V
Capacitance @ Vr, F: --
Mounting Type: Surface Mount
Package / Case: SOD-128
Supplier Device Package: PMDTM
Operating Temperature - Junction: 150°C (Max)
Description

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The RF201LAM4STR is a rectifier diode that has wide application and is highly valued for its reliability and usage in power supply design. It is a single-phase diode, which uses an optimized silicon junction technology to provide a low on-state forward voltage drop. In the single-phase diodes, the RF201LAM4STR device is used to provide a rectified voltage of 220 volts, with a maximum ripple current of 1.5A.

The primary application field for the RF201LAM4STR device is power supply design. For a power supply to work properly and efficiently, the rectified voltage must be consistent and the current ripple minimized. The RF201LAM4STR device provides both of these requirements. It is able to provide a constant rectified voltage of up to 220 volts, with a ripple current of 1.5A or less. This makes it highly suitable for power supply designs, especially if the device is used in combination with suitable filtering components to provide a clean, unregulated output voltage. It can also be used for a variety of other applications, such as voltage regulation, pulse width modulation and boost conversion.

The working principle behind the RF201LAM4STR device is fairly straightforward. The device contains a pair of silicon diodes in a single package, with each diode in the pair conducting current in opposite directions. When the device is reverse biased, the two diodes are reverse biased and will not conduct any current.

When a forward bias supply voltage is applied to the device, current is allowed to flow through the device. The forward bias voltage is responsible for creating a voltage drop (VF) across the diode junctions. This voltage drop results in a rectified, or AC-to-DC, output voltage. By controlling the size of the forward bias voltage, and using appropriate filtering circuitry, the output voltage can be regulated, and the ripple current minimized.

The RF201LAM4STR device is an excellent choice for any power supply design, as it has a high current capacity and low voltage drop. It is also able to provide a consistently reliable output voltage, even in variable input and load conditions. Additionally, its cost-performance ratio and reliability make it a highly sought after choice for many applications.

The specific data is subject to PDF, and the above content is for reference

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