RFM03U3CT(TE12L) Discrete Semiconductor Products |
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Allicdata Part #: | RFM03U3CT(TE12L)CT-ND |
Manufacturer Part#: |
RFM03U3CT(TE12L) |
Price: | $ 5.03 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Toshiba Semiconductor and Storage |
Short Description: | MOSFET N-CH RF-CST3 |
More Detail: | RF Mosfet N-Channel 3.6V 500mA 520MHz 14.8dB 3W RF... |
DataSheet: | RFM03U3CT(TE12L) Datasheet/PDF |
Quantity: | 1535 |
1 +: | $ 4.57380 |
10 +: | $ 4.08555 |
100 +: | $ 3.35021 |
500 +: | $ 2.71287 |
1000 +: | $ 2.28796 |
Series: | -- |
Packaging: | Cut Tape (CT) |
Part Status: | Discontinued at Digi-Key |
Transistor Type: | N-Channel |
Frequency: | 520MHz |
Gain: | 14.8dB |
Voltage - Test: | 3.6V |
Current Rating: | 3A |
Noise Figure: | -- |
Current - Test: | 500mA |
Power - Output: | 3W |
Voltage - Rated: | 16V |
Package / Case: | 2-SMD, No Lead Exposed Pad |
Supplier Device Package: | RF-CST3 |
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The RFM03U3CT(TE12L) is a common field-effect transistor (FET) used in a wide variety of applications ranging from small signal to amplifier and switching systems. It is part of a family of devices referred to as RF FETs and is an excellent choice for a wide variety of applications due to its low cost, high dynamic range, and long-term performance.A field-effect transistor (FET) is an electronic device that is used to control the flow of current between two electrodes. FETs are considered more versatile than other types of transistors because they can be used to amplify or switch signals that range from very low to very high frequencies. The RFM03U3CT(TE12L) is an N-channel enhancement mode FET and is an ideal choice for many radio frequency (RF) and microwave applications.The RFM03U3CT(TE12L) operates under very low-power conditions and is capable of providing a higher dynamic range than other common field-effect transistors. Its on-resistance is low, making it ideal for switching applications, and its capacitance is low, meaning that it is suitable for use in high-frequency and wideband applications. The RFM03U3CT(TE12L) also has excellent thermal properties, meaning it can dissipate excess heat and keep from deteriorating in high temperature environments.The operating principle of the RFM03U3CT(TE12L) is simple. When a voltage is applied to the gate of the FET, it creates an electric field that attracts or repels electrons. Depending on the polarity of the voltage, the electrons either flow through the transistor or not. This change in the flow of electrons is what allows the RFM03U3CT(TE12L) to amplify or switch signals.The RFM03U3CT(TE12L) can be used in a wide variety of applications including radio frequency amplifiers, switching systems, power control, and signal detection. Due to its high dynamic range, the RFM03U3CT(TE12L) is especially useful in RF applications where the signal power needs to be controlled or amplified accurately and consistently.The RFM03U3CT(TE12L) is also a cost-effective choice for switching and power control applications, where a reliable and stable circuit is needed. It is commonly used in low voltage switching systems, where a high input/output ratio is desired. This type of FET also works well in small signal and low-noise systems.Due to its low cost and durable design, the RFM03U3CT(TE12L) is a popular choice among engineers and system designers around the world. Its versatile design makes it suitable for a wide variety of applications, and its thermal and dynamic characteristics make it an excellent choice for RF applications. If you are looking for an efficient, reliable, and cost-effective FET for your application, the RFM03U3CT(TE12L) is a great choice.
The specific data is subject to PDF, and the above content is for reference
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