RFM12U7X(TE12L,Q)

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The RFM12U7X transistors are part of the family of Metal-Oxide Semiconductor Field-Effect Transistors (MOSFETs) specifically designed for radio frequency (RF) applications. The transistors are commonly used in the communication field and are features with low voltage, low power, high frequency and high gain, making them a preferred choice of RF engineers and manufacturers across a diverse range of applications.

The RFM12U7X (TE12L,Q) is a double-gate type MOSFET of N-type. Its structure consists of a semiconductor material layer between a source and a drain, separated by a thin gate-oxide layer. Its layout features two gates placed side by side and separated by an oxide layer. This type of transistor offers high performance, high frequency, low noise and low-power characteristics suitable for RF applications.

The working principle of the RFM12U7X is based on the Proportional Field Effect (PFE) concept, which is a current control mechanism. In this context, the current being driven from source to drain depends on the difference between the gate-to-source voltage (Vgs) and the gate-to-drain voltage (Vgd). As soon as the Vgs and Vgd voltages are stabilised and the voltage difference exceeds a certain value, the current at the drain will increase linearly in proportion to the gate-to-source voltage drop, according to the PFE theory.

One of the main features of the RFM12U7X is its dielectric insulation between gates, which eliminates the need of external bias controls. This transistor is capable of operating over a wide range of frequencies, including up to 6 GHz, and can be operated in either linear or saturation modes.

The wide availability of the RFM12U7X and its circuit compatibility makes it easy to be integrated into a new or existing circuit with minimal effort. Furthermore, it has high efficiency and enables low-harmonic distortion, making it suitable for use in communication systems.

Due to its high performance and small size, the RFM12U7X is frequently used in wireless communication systems, such as wireless local area networks (WLANs), Global Maritime Distress and Safety System (GMDSS) applications, digital ceramic and high-speed switching systems, microwave repeater systems, and digital television receivers.

The RFM12U7X can also be utilised in Automotive Infotainment systems, including radio receivers and navigation systems, as in-car entertainment systems, and in medical systems such as CT scanner systems and medical imaging amplifiers.

Overall, the RFM12U7X transistors offer high performance, high frequency, low noise, and low-power characteristics, which makes them suitable for diverse applications in the field of communication.

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