Allicdata Part #: | RGL41J/1-ND |
Manufacturer Part#: |
RGL41J/1 |
Price: | $ 0.08 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Semiconductor Diodes Division |
Short Description: | DIODE GEN PURP 600V 1A DO213AB |
More Detail: | Diode Standard 600V 1A Surface Mount DO-213AB |
DataSheet: | RGL41J/1 Datasheet/PDF |
Quantity: | 1000 |
4000 +: | $ 0.06833 |
Series: | SUPERECTIFIER® |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 600V |
Current - Average Rectified (Io): | 1A |
Voltage - Forward (Vf) (Max) @ If: | 1.3V @ 1A |
Speed: | Fast Recovery = 200mA (Io) |
Reverse Recovery Time (trr): | 250ns |
Current - Reverse Leakage @ Vr: | 5µA @ 600V |
Capacitance @ Vr, F: | 15pF @ 4V, 1MHz |
Mounting Type: | Surface Mount |
Package / Case: | DO-213AB, MELF (Glass) |
Supplier Device Package: | DO-213AB |
Operating Temperature - Junction: | -65°C ~ 175°C |
Base Part Number: | RGL41J |
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Diodes have become a mainstay in most electrical circuits, providing a wide variety of functions. The RGL41J/1 is a single rectifier diode, which provides rectification of alternating current, allowing it to be used in a variety of applications.
The RGL41J/1 is a high-capacity rectifier, designed to handle currents ranging from 1A to 3.2A and voltages from 80V to 600V. It has a standard recovery time of 30 nanoseconds, making it suitable for many high frequency switching and voltage regulation applications. The diode has a maximum forward current of 3.2A and a peak reverse voltage of 800V. It is capable of operating at temperatures up to 150°C.
The primary application of the RGL41J/1 is for power supply circuits, particularly for use in high frequency switching for AC mains voltage rectification. It is also commonly used for voltage surge protection and interference suppression. The diode can also be used in EDM (Electro-Discharge Machining) power supplies, as well as automotive lighting systems. The RGL41J/1 is a good choice for high current applications, as it is robust and reliable while still offering good control and efficiency.
The working principle of the RGL41J/1 is based on the PN junction, which is an electrically active boundary between two semiconductor layers. The N-type layer of the diode is composed of an abundance of electrons, while the P-type layer has an abundance of ‘holes’, or positive charge carriers. The two layers are held together by an electrical force, known as the barrier potential. This property allows electrical current to only flow in one direction, from the N to the P-layer. When the PN junction is forward biased, the barrier potential is reduced, allowing current to flow in the forward direction. When the junction is reverse biased, the barrier potential is increased, and current does not flow.
The RGL41J/1 utilizes the PN junction to act as a rectifier. When AC mains voltage is applied to the diode, the current is only allowed to flow in one direction, as the diode resists the reverse current. This allows alternating current to be converted into direct current. The diode also has a low forward voltage drop, allowing it to operate with good efficiency. It also has a very low reverse leakage current, ensuring that only the desired current flows through the system.
In conclusion, the RGL41J/1 is a high capacity single rectifier diode, designed to provide reliable rectification in a variety of applications. Its wide operating range and fast recovery time makes it suitable for use in high frequency switching and voltage regulation. Thanks to its PN junction working principle, it is able to convert alternating current into direct current with good efficiency and low leakage current. As such, it is an important component in power supply and automotive lighting circuits.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
RGL41M-E3/96 | Vishay Semic... | 0.08 $ | 12000 | DIODE GEN PURP 1KV 1A DO2... |
RGL41J-E3/96 | Vishay Semic... | -- | 9000 | DIODE GEN PURP 600V 1A DO... |
RGL41G-E3/96 | Vishay Semic... | 0.08 $ | 1500 | DIODE GEN PURP 400V 1A DO... |
RGL41K-E3/96 | Vishay Semic... | 0.08 $ | 1000 | DIODE GEN PURP 800V 1A DO... |
RGL41J-E3/97 | Vishay Semic... | 0.08 $ | 10000 | DIODE GEN PURP 600V 1A DO... |
RGL41A-E3/97 | Vishay Semic... | 0.07 $ | 1000 | DIODE GEN PURP 50V 1A DO2... |
RGL41B-E3/97 | Vishay Semic... | 0.07 $ | 1000 | DIODE GEN PURP 100V 1A DO... |
RGL41D-E3/97 | Vishay Semic... | 0.07 $ | 1000 | DIODE GEN PURP 200V 1A DO... |
RGL41G-E3/97 | Vishay Semic... | 0.07 $ | 1000 | DIODE GEN PURP 400V 1A DO... |
RGL41K-E3/97 | Vishay Semic... | 0.07 $ | 1000 | DIODE GEN PURP 800V 1A DO... |
RGL41M-E3/97 | Vishay Semic... | -- | 1000 | DIODE GEN PURP 1KV 1A DO2... |
RGL41A-E3/96 | Vishay Semic... | 0.08 $ | 1000 | DIODE GEN PURP 50V 1A DO2... |
RGL41D-E3/96 | Vishay Semic... | 0.08 $ | 1000 | DIODE GEN PURP 200V 1A DO... |
RGL41B-E3/96 | Vishay Semic... | -- | 1000 | DIODE GEN PURP 100V 1A DO... |
RGL41B/1 | Vishay Semic... | 0.08 $ | 1000 | DIODE GEN PURP 100V 1A DO... |
RGL41J/1 | Vishay Semic... | 0.08 $ | 1000 | DIODE GEN PURP 600V 1A DO... |
RGL41D/1 | Vishay Semic... | 0.08 $ | 1000 | DIODE GEN PURP 200V 1A DO... |
RGL41G/1 | Vishay Semic... | 0.08 $ | 1000 | DIODE GEN PURP 400V 1A DO... |
RGL41M/1 | Vishay Semic... | 0.08 $ | 1000 | DIODE GEN PURP 1KV 1A DO2... |
RGL41AHE3/97 | Vishay Semic... | 0.09 $ | 1000 | DIODE GEN PURP 50V 1A DO2... |
RGL41BHE3/97 | Vishay Semic... | 0.09 $ | 1000 | DIODE GEN PURP 100V 1A DO... |
RGL41DHE3/97 | Vishay Semic... | 0.09 $ | 1000 | DIODE GEN PURP 200V 1A DO... |
RGL41GHE3/97 | Vishay Semic... | 0.09 $ | 1000 | DIODE GEN PURP 400V 1A DO... |
RGL41JHE3/97 | Vishay Semic... | 0.09 $ | 1000 | DIODE GEN PURP 600V 1A DO... |
RGL41AHE3/96 | Vishay Semic... | 0.1 $ | 1000 | DIODE GEN PURP 50V 1A DO2... |
RGL41BHE3/96 | Vishay Semic... | 0.1 $ | 1000 | DIODE GEN PURP 100V 1A DO... |
RGL41DHE3/96 | Vishay Semic... | 0.1 $ | 1000 | DIODE GEN PURP 200V 1A DO... |
RGL41GHE3/96 | Vishay Semic... | 0.1 $ | 1000 | DIODE GEN PURP 400V 1A DO... |
RGL41JHE3/96 | Vishay Semic... | 0.1 $ | 1000 | DIODE GEN PURP 600V 1A DO... |
RGL41KHE3_A/H | Vishay Semic... | 0.11 $ | 1000 | DIODE GEN PURP 800V 1A DO... |
RGL41KHE3_A/I | Vishay Semic... | 0.11 $ | 1000 | DIODE GEN PURP 800V 1A DO... |
RGL41MHE3_A/H | Vishay Semic... | 0.11 $ | 1000 | DIODE GEN PURP 1KV 1A DO2... |
RGL41MHE3_A/I | Vishay Semic... | 0.11 $ | 1000 | DIODE GEN PURP 1KV 1A DO2... |
RGL41KHE3/97 | Vishay Semic... | 0.09 $ | 1000 | DIODE GEN PURP 800V 1A DO... |
RGL41MHE3/97 | Vishay Semic... | 0.09 $ | 1000 | DIODE GEN PURP 1KV 1A DO2... |
RGL41KHE3/96 | Vishay Semic... | 0.1 $ | 1000 | DIODE GEN PURP 800V 1A DO... |
RGL41MHE3/96 | Vishay Semic... | 0.1 $ | 1000 | DIODE GEN PURP 1KV 1A DO2... |
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