RGL41J-E3/96 Discrete Semiconductor Products |
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| Allicdata Part #: | RGL41J-E3/96GITR-ND |
| Manufacturer Part#: |
RGL41J-E3/96 |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Vishay Semiconductor Diodes Division |
| Short Description: | DIODE GEN PURP 600V 1A DO213AB |
| More Detail: | Diode Standard 600V 1A Surface Mount DO-213AB |
| DataSheet: | RGL41J-E3/96 Datasheet/PDF |
| Quantity: | 9000 |
| Series: | SUPERECTIFIER® |
| Packaging: | Tape & Reel (TR) |
| Part Status: | Active |
| Diode Type: | Standard |
| Voltage - DC Reverse (Vr) (Max): | 600V |
| Current - Average Rectified (Io): | 1A |
| Voltage - Forward (Vf) (Max) @ If: | 1.3V @ 1A |
| Speed: | Fast Recovery = 200mA (Io) |
| Reverse Recovery Time (trr): | 250ns |
| Current - Reverse Leakage @ Vr: | 5µA @ 600V |
| Capacitance @ Vr, F: | 15pF @ 4V, 1MHz |
| Mounting Type: | Surface Mount |
| Package / Case: | DO-213AB, MELF (Glass) |
| Supplier Device Package: | DO-213AB |
| Operating Temperature - Junction: | -65°C ~ 175°C |
| Base Part Number: | RGL41J |
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Diodes are devices used to transfer electricity in one direction and prevent the flow in the other. Rectifiers are single diodes that convert alternating current (AC) to direct current (DC). Rectifiers can either be a single diode or a group of them. Single diode rectifiers are used for tasks that require a low power DC signal. The RGL41J-E3/96 is such an example of a single diode rectifier.
The RGL41J-E3/96 is a silicon pin rectifier that is commonly used in radio equipment, audio equipment, communications equipment, and medical equipment. It is a high power diode that is capable of dissipating 1W at a temperature of 25℃. It is a low forward voltage rectifier, with a peak repetitive reverse voltage of 1000V and a forward current of 0.3A. The junction temperature range of the RGL41J-E3/96 is -55℃ to +175℃. It has a peak reverse current leakage of 100μA at 25℃.
The working principle of the RGL41J-E3/96 is simple. It consists of an anode and a cathode connected to a silicon body. When a voltage is applied to the diode from an outside source, the anode will draw electrons from the cathode to form an electric current. The forward voltage of the diode will turn the current into a DC signal and direct the current flow in one direction. The reverse voltage of the diode will not allow current to flow in the opposite direction. This property of the diode makes it useful for tasks that require a smooth DC voltage.
The RGL41J-E3/96 is suitable for use in applications such as audio equipment, radio receivers, medical equipment, and communications equipment. Its 1W power rating makes it suitable for low power applications, while its low forward voltage and wide temperature range make it ideal for use in a wide variety of environments. The RGL41J-E3/96 provides a reliable, low power DC signal, making it an ideal choice for a wide range of applications.
The specific data is subject to PDF, and the above content is for reference
| Part Number | Manufacturer | Price | Quantity | Description |
|---|
| RGL41J-E3/96 | Vishay Semic... | -- | 9000 | DIODE GEN PURP 600V 1A DO... |
| RGL41GHE3/97 | Vishay Semic... | 0.09 $ | 1000 | DIODE GEN PURP 400V 1A DO... |
| RGL41KHE3_A/I | Vishay Semic... | 0.11 $ | 1000 | DIODE GEN PURP 800V 1A DO... |
| RGL41MHE3/96 | Vishay Semic... | 0.1 $ | 1000 | DIODE GEN PURP 1KV 1A DO2... |
| RGL41A-E3/96 | Vishay Semic... | 0.08 $ | 1000 | DIODE GEN PURP 50V 1A DO2... |
| RGL41JHE3/96 | Vishay Semic... | 0.1 $ | 1000 | DIODE GEN PURP 600V 1A DO... |
| RGL41KHE3/96 | Vishay Semic... | 0.1 $ | 1000 | DIODE GEN PURP 800V 1A DO... |
| RGL41M/1 | Vishay Semic... | 0.08 $ | 1000 | DIODE GEN PURP 1KV 1A DO2... |
| RGL41G-E3/97 | Vishay Semic... | 0.07 $ | 1000 | DIODE GEN PURP 400V 1A DO... |
| RGL41GHE3/96 | Vishay Semic... | 0.1 $ | 1000 | DIODE GEN PURP 400V 1A DO... |
| RGL41AHE3/96 | Vishay Semic... | 0.1 $ | 1000 | DIODE GEN PURP 50V 1A DO2... |
| RGL41M-E3/96 | Vishay Semic... | 0.08 $ | 12000 | DIODE GEN PURP 1KV 1A DO2... |
| RGL41A-E3/97 | Vishay Semic... | 0.07 $ | 1000 | DIODE GEN PURP 50V 1A DO2... |
| RGL41KHE3_A/H | Vishay Semic... | 0.11 $ | 1000 | DIODE GEN PURP 800V 1A DO... |
| RGL41DHE3/97 | Vishay Semic... | 0.09 $ | 1000 | DIODE GEN PURP 200V 1A DO... |
| RGL41B-E3/96 | Vishay Semic... | -- | 1000 | DIODE GEN PURP 100V 1A DO... |
| RGL41J/1 | Vishay Semic... | 0.08 $ | 1000 | DIODE GEN PURP 600V 1A DO... |
| RGL41KHE3/97 | Vishay Semic... | 0.09 $ | 1000 | DIODE GEN PURP 800V 1A DO... |
| RGL41D-E3/96 | Vishay Semic... | 0.08 $ | 1000 | DIODE GEN PURP 200V 1A DO... |
| RGL41B/1 | Vishay Semic... | 0.08 $ | 1000 | DIODE GEN PURP 100V 1A DO... |
| RGL41K-E3/96 | Vishay Semic... | 0.08 $ | 1000 | DIODE GEN PURP 800V 1A DO... |
| RGL41D-E3/97 | Vishay Semic... | 0.07 $ | 1000 | DIODE GEN PURP 200V 1A DO... |
| RGL41AHE3/97 | Vishay Semic... | 0.09 $ | 1000 | DIODE GEN PURP 50V 1A DO2... |
| RGL41MHE3_A/I | Vishay Semic... | 0.11 $ | 1000 | DIODE GEN PURP 1KV 1A DO2... |
| RGL41DHE3/96 | Vishay Semic... | 0.1 $ | 1000 | DIODE GEN PURP 200V 1A DO... |
| RGL41G/1 | Vishay Semic... | 0.08 $ | 1000 | DIODE GEN PURP 400V 1A DO... |
| RGL41BHE3/96 | Vishay Semic... | 0.1 $ | 1000 | DIODE GEN PURP 100V 1A DO... |
| RGL41MHE3_A/H | Vishay Semic... | 0.11 $ | 1000 | DIODE GEN PURP 1KV 1A DO2... |
| RGL41K-E3/97 | Vishay Semic... | 0.07 $ | 1000 | DIODE GEN PURP 800V 1A DO... |
| RGL41JHE3/97 | Vishay Semic... | 0.09 $ | 1000 | DIODE GEN PURP 600V 1A DO... |
| RGL41BHE3/97 | Vishay Semic... | 0.09 $ | 1000 | DIODE GEN PURP 100V 1A DO... |
| RGL41MHE3/97 | Vishay Semic... | 0.09 $ | 1000 | DIODE GEN PURP 1KV 1A DO2... |
| RGL41M-E3/97 | Vishay Semic... | -- | 1000 | DIODE GEN PURP 1KV 1A DO2... |
| RGL41J-E3/97 | Vishay Semic... | 0.08 $ | 10000 | DIODE GEN PURP 600V 1A DO... |
| RGL41D/1 | Vishay Semic... | 0.08 $ | 1000 | DIODE GEN PURP 200V 1A DO... |
| RGL41B-E3/97 | Vishay Semic... | 0.07 $ | 1000 | DIODE GEN PURP 100V 1A DO... |
| RGL41G-E3/96 | Vishay Semic... | 0.08 $ | 1500 | DIODE GEN PURP 400V 1A DO... |
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RGL41J-E3/96 Datasheet/PDF