Allicdata Part #: | RGL41KHE3_A/I-ND |
Manufacturer Part#: |
RGL41KHE3_A/I |
Price: | $ 0.11 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Semiconductor Diodes Division |
Short Description: | DIODE GEN PURP 800V 1A DO213AB |
More Detail: | Diode Standard 800V 1A Surface Mount DO-213AB |
DataSheet: | RGL41KHE3_A/I Datasheet/PDF |
Quantity: | 1000 |
10000 +: | $ 0.09824 |
Series: | Automotive, AEC-Q101, Superectifier® |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 800V |
Current - Average Rectified (Io): | 1A |
Voltage - Forward (Vf) (Max) @ If: | 1.3V @ 1A |
Speed: | Fast Recovery = 200mA (Io) |
Reverse Recovery Time (trr): | 500ns |
Current - Reverse Leakage @ Vr: | 5µA @ 800V |
Capacitance @ Vr, F: | 15pF @ 4V, 1MHz |
Mounting Type: | Surface Mount |
Package / Case: | DO-213AB, MELF (Glass) |
Supplier Device Package: | DO-213AB |
Operating Temperature - Junction: | -65°C ~ 175°C |
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The RGL41KHE3_A/I single rectifier diode is a solid-state device that enables electrical charge to flow in one direction. It is most commonly used for AC-to-DC rectification in power supplies and other electronic circuits. The RGL41KHE3_A/I is a single rectifier diode with a compact size, high-speed switching capability, and low power dissipation.
The RGL41KHE3_A/I is a low-cost, high-efficiency diode. It can easily handle up to 5 amps of current and has a maximum reverse voltage of 400 volts. The diode has a small on-state voltage drop and a high switching speed, making it suitable for applications requiring high speed and efficiency. The maximum forward voltage is 50 volts, and the maximum reverse leakage current is 200 mA.
The RGL41KHE3_A/I is a versatile diode and can be used in a variety of applications. In power supplies, the RGL41KHE3_A/I is used as a bridge rectifier to convert AC power to DC power. This diode can also be used in switching applications, such as rectifying pulses and controlling waveforms. Other applications include voltage regulation, waveform shaping, and noise suppression.
The working principle of the RGL41KHE3_A/I is based on semiconductor diode physics. A diode is a two-terminal device that allows current to flow in one direction. The RGL41KHE3_A/I is a PN-junction diode, which means that it has a p-type semiconductor material on one side, and a n-type semiconductor material on the other. When forward bias voltage is applied across the PN junction, the electrons in the P-type material flow towards the N-type material and form a conduction path. This path allows current to flow in one direction, while blocking current in the opposite direction.
The RGL41KHE3_A/I single rectifier diode is a widely used device in a variety of applications. It is durable, low-cost and high-efficiency, and has a wide operating temperature range. The RGL41KHE3_A/I can easily switch at high speeds and provides superior performance in power supplies and other electronic circuits.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
RGL41M-E3/96 | Vishay Semic... | 0.08 $ | 12000 | DIODE GEN PURP 1KV 1A DO2... |
RGL41J-E3/96 | Vishay Semic... | -- | 9000 | DIODE GEN PURP 600V 1A DO... |
RGL41G-E3/96 | Vishay Semic... | 0.08 $ | 1500 | DIODE GEN PURP 400V 1A DO... |
RGL41K-E3/96 | Vishay Semic... | 0.08 $ | 1000 | DIODE GEN PURP 800V 1A DO... |
RGL41J-E3/97 | Vishay Semic... | 0.08 $ | 10000 | DIODE GEN PURP 600V 1A DO... |
RGL41A-E3/97 | Vishay Semic... | 0.07 $ | 1000 | DIODE GEN PURP 50V 1A DO2... |
RGL41B-E3/97 | Vishay Semic... | 0.07 $ | 1000 | DIODE GEN PURP 100V 1A DO... |
RGL41D-E3/97 | Vishay Semic... | 0.07 $ | 1000 | DIODE GEN PURP 200V 1A DO... |
RGL41G-E3/97 | Vishay Semic... | 0.07 $ | 1000 | DIODE GEN PURP 400V 1A DO... |
RGL41K-E3/97 | Vishay Semic... | 0.07 $ | 1000 | DIODE GEN PURP 800V 1A DO... |
RGL41M-E3/97 | Vishay Semic... | -- | 1000 | DIODE GEN PURP 1KV 1A DO2... |
RGL41A-E3/96 | Vishay Semic... | 0.08 $ | 1000 | DIODE GEN PURP 50V 1A DO2... |
RGL41D-E3/96 | Vishay Semic... | 0.08 $ | 1000 | DIODE GEN PURP 200V 1A DO... |
RGL41B-E3/96 | Vishay Semic... | -- | 1000 | DIODE GEN PURP 100V 1A DO... |
RGL41B/1 | Vishay Semic... | 0.08 $ | 1000 | DIODE GEN PURP 100V 1A DO... |
RGL41J/1 | Vishay Semic... | 0.08 $ | 1000 | DIODE GEN PURP 600V 1A DO... |
RGL41D/1 | Vishay Semic... | 0.08 $ | 1000 | DIODE GEN PURP 200V 1A DO... |
RGL41G/1 | Vishay Semic... | 0.08 $ | 1000 | DIODE GEN PURP 400V 1A DO... |
RGL41M/1 | Vishay Semic... | 0.08 $ | 1000 | DIODE GEN PURP 1KV 1A DO2... |
RGL41AHE3/97 | Vishay Semic... | 0.09 $ | 1000 | DIODE GEN PURP 50V 1A DO2... |
RGL41BHE3/97 | Vishay Semic... | 0.09 $ | 1000 | DIODE GEN PURP 100V 1A DO... |
RGL41DHE3/97 | Vishay Semic... | 0.09 $ | 1000 | DIODE GEN PURP 200V 1A DO... |
RGL41GHE3/97 | Vishay Semic... | 0.09 $ | 1000 | DIODE GEN PURP 400V 1A DO... |
RGL41JHE3/97 | Vishay Semic... | 0.09 $ | 1000 | DIODE GEN PURP 600V 1A DO... |
RGL41AHE3/96 | Vishay Semic... | 0.1 $ | 1000 | DIODE GEN PURP 50V 1A DO2... |
RGL41BHE3/96 | Vishay Semic... | 0.1 $ | 1000 | DIODE GEN PURP 100V 1A DO... |
RGL41DHE3/96 | Vishay Semic... | 0.1 $ | 1000 | DIODE GEN PURP 200V 1A DO... |
RGL41GHE3/96 | Vishay Semic... | 0.1 $ | 1000 | DIODE GEN PURP 400V 1A DO... |
RGL41JHE3/96 | Vishay Semic... | 0.1 $ | 1000 | DIODE GEN PURP 600V 1A DO... |
RGL41KHE3_A/H | Vishay Semic... | 0.11 $ | 1000 | DIODE GEN PURP 800V 1A DO... |
RGL41KHE3_A/I | Vishay Semic... | 0.11 $ | 1000 | DIODE GEN PURP 800V 1A DO... |
RGL41MHE3_A/H | Vishay Semic... | 0.11 $ | 1000 | DIODE GEN PURP 1KV 1A DO2... |
RGL41MHE3_A/I | Vishay Semic... | 0.11 $ | 1000 | DIODE GEN PURP 1KV 1A DO2... |
RGL41KHE3/97 | Vishay Semic... | 0.09 $ | 1000 | DIODE GEN PURP 800V 1A DO... |
RGL41MHE3/97 | Vishay Semic... | 0.09 $ | 1000 | DIODE GEN PURP 1KV 1A DO2... |
RGL41KHE3/96 | Vishay Semic... | 0.1 $ | 1000 | DIODE GEN PURP 800V 1A DO... |
RGL41MHE3/96 | Vishay Semic... | 0.1 $ | 1000 | DIODE GEN PURP 1KV 1A DO2... |
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