Allicdata Part #: | RJP6085DPK-00#T0-ND |
Manufacturer Part#: |
RJP6085DPK-00#T0 |
Price: | $ 3.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Renesas Electronics America |
Short Description: | IGBT 600V 40A 178.5W TO-3P |
More Detail: | IGBT 600V 40A 178.5W Through Hole TO-3P |
DataSheet: | RJP6085DPK-00#T0 Datasheet/PDF |
Quantity: | 70 |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
1 +: | $ 2.72790 |
10 +: | $ 2.43369 |
25 +: | $ 2.19038 |
Power - Max: | 178.5W |
Supplier Device Package: | TO-3P |
Package / Case: | TO-3P-3, SC-65-3 |
Mounting Type: | Through Hole |
Operating Temperature: | 150°C (TJ) |
Test Condition: | -- |
Td (on/off) @ 25°C: | -- |
Input Type: | Standard |
Switching Energy: | -- |
Series: | -- |
Vce(on) (Max) @ Vge, Ic: | 3.5V @ 15V, 40A |
Current - Collector (Ic) (Max): | 40A |
Voltage - Collector Emitter Breakdown (Max): | 600V |
IGBT Type: | -- |
Moisture Sensitivity Level (MSL): | -- |
Part Status: | Active |
Lead Free Status / RoHS Status: | -- |
Packaging: | Tube |
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The RJP6085DPK-00#T0 is a device under the Transistors - IGBTs - Single category. It is an insulated gate bipolar transistor (IGBT) module that is designed for high current and power applications, and integrated with highvoltage FWD and a fast recovery diode. It is used as a reverse bias and over-current protection device which can be used to control switching sites in main inverters in high frequency welding machines, IPMs and UPSs. Furthermore, it can be used for power applications in high frequency switching devices, motor controllers, and test equipment.
An IGBT is a type of transistor where two dissimilar materials are joined together to form a structure. It combines the fast switching speed of a bipolar transistor with the simple and low-cost gate drive of a metal oxide semiconductor (MOSFET). It is comprised of two transistors – a small signal control transistor and a current carrying transistor. The control transistor acts as a switch which is used to control the current flow between the two transistors. The current carrying transistor amplifies the current and holds the charge when the switch is off.
The RJP6085DPK-00#T0 is designed to have the advantages of both MOSFETs and BJTs. It has a low input capacitance and a wide gate drive voltage range. Furthermore, it provides very low switching losses, making it an ideal choice for high switching frequency, high power applications. It can operate in both a normal and inverse polarity mode. It also has an integrated fast recovery diode that eliminates the need for a separate diode in the circuit.
The RJP6085DPK-00#T0 also has a voltage monitoring and protection circuit which allows for a fault-tolerant power supply design. This circuit allows for detection of a fault or over-current condition, and provides an alert signal that can be used to shut down the power supply or device immediately to prevent damage. Finally, it has an integrated temperature monitoring circuit which can be used to detect any overheating of the system and shut it down automatically.
Overall, the RJP6085DPK-00#T0 is an ideal choice for applications where high power and a high switching frequency are needed. Its fast switching and low switching losses make it an ideal choice for high current and power applications. Furthermore, its integrated protection circuits, fast recovery diode, and temperature monitoring circuit make it an excellent choice for a fault-tolerant power supply design. Its integration of both MOSFETs and BJTs make it a robust and cost effective choice when used in high frequency switching devices, motor controllers, and test equipment.
The specific data is subject to PDF, and the above content is for reference
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