RJP60D0DPK-00#T0 Allicdata Electronics
Allicdata Part #:

RJP60D0DPK-00#T0-ND

Manufacturer Part#:

RJP60D0DPK-00#T0

Price: $ 2.30
Product Category:

Discrete Semiconductor Products

Manufacturer: Renesas Electronics America
Short Description: IGBT 600V 45A 140W TO-3P
More Detail: IGBT 600V 45A 140W Through Hole TO-3P
DataSheet: RJP60D0DPK-00#T0 datasheetRJP60D0DPK-00#T0 Datasheet/PDF
Quantity: 4
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
1 +: $ 2.09160
Stock 4Can Ship Immediately
$ 2.3
Specifications
Switching Energy: --
Base Part Number: RJP60D
Supplier Device Package: TO-3P
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Test Condition: 300V, 22A, 5 Ohm, 15V
Td (on/off) @ 25°C: 35ns/90ns
Gate Charge: 45nC
Input Type: Standard
Series: --
Power - Max: 140W
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 22A
Current - Collector (Ic) (Max): 45A
Voltage - Collector Emitter Breakdown (Max): 600V
IGBT Type: --
Moisture Sensitivity Level (MSL): --
Part Status: Active
Lead Free Status / RoHS Status: --
Packaging: Tube 
Description

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The RJP60D0DPK-00#T0 is a type of transistor known as an Insulated Gate Bipolar Transistor (IGBT), which is a type of electrical switch used in various applications such as power switching, motor control, and so on. RJP60D0DPK-00#T0 has its own unique characteristics, which makes it suitable for certain applications. This article will discuss the application field and the working principle of the RJP60D0DPK-00#T0.

The RJP60D0DPK-00#T0 is a switching transistor that combines the benefits of both a metal oxide semiconductor field-effect transistor (MOSFET) and a bipolar junction transistor (BJT). It has the high input impedance of a MOSFET, which means that it can handle higher input voltage and higher switching speed. It also has the low on-state resistance of a BJT, making it highly efficient. These characteristics make the RJP60D0DPK-00#T0 suitable for various applications, such as motor control, switched-mode power supplies (SMPS), switching mode power amplifiers, and so on.

In terms of its working principle, the RJP60D0DPK-00#T0 consists of three components: an emitter, a collector and a insulated-gate. When a positive voltage is applied to the gate, it attracts the electrons from the emitter and attracts positive charges from the collector. This causes current to flow through the transistor and allows it to be switched on or off, depending on the voltage applied to the gate.

The RJP60D0DPK-00#T0 is suitable for applications that require high speed and high power switching, such as motor control and switched-mode power supplies. It is also suitable for applications where low-voltage operation and high-current capacity are required, such as switching mode power amplifiers. In addition, due to its low on-state resistance, it is highly efficient and can be used in many different types of applications that require power switching.

Overall, the RJP60D0DPK-00#T0 is a highly versatile type of transistor, with a wide range of application fields and a unique working principle. It is suitable for various applications, such as motor control, switched-mode power supplies, and switching mode power amplifiers. Its low on-state resistance makes it highly efficient, making it an ideal choice for many power switching applications.

The specific data is subject to PDF, and the above content is for reference

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