RJP6085DPN-00#T2

Power - Max:	178.5W
Supplier Device Package:	TO-220AB
Package / Case:	TO-220-3
Mounting Type:	Through Hole
Operating Temperature:	150°C (TJ)
Test Condition:	--
Td (on/off) @ 25°C:	--
Input Type:	Standard
Switching Energy:	--
Series:	--
Vce(on) (Max) @ Vge, Ic:	3.5V @ 15V, 40A
Current - Collector (Ic) (Max):	40A
Voltage - Collector Emitter Breakdown (Max):	600V
IGBT Type:	--
Moisture Sensitivity Level (MSL):	--
Part Status:	Active
Lead Free Status / RoHS Status:	--
Packaging:	Tube

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RJP6085DPN-00#T2 Application Field and Working Principle

The RJP6085DPN-00#T2 is an Insulated Gate Bipolar Transistor (IGBT) module. This type of device has a wide range of uses and is highly versatile, being used in a variety of applications.In particular, the RJP6085DPN-00#T2 is used in the automotive and industrial markets. It is commonly used as a control component in power converters, motor drives, and power electronics systems. The RJP6085DPN-00#T2 is also used in solar, LED lighting, and medical equipment.This IGBT module features a high operating voltage range of up to 1500V, making it suitable for high-power applications. The module has low on-resistance, enabling it to kill large currents quickly and steadily. Additionally, the RJP6085DPN-00#T2 has over-current protection and other safety features that make it a suitable component for long-term use.The RJP6085DPN-00#T2 works on the principle of bipolar junction transistors. It consists of two oppositely doped semiconductor layers, with the one closest to the gate being positively charged and the one furthest being negatively charged.When a positive current is applied to the gate, it induces a negative charge in the first layer and a positive charge in the second layer. This creates an electrical field between the two layers that encourages conduction. This phenomenon is known as the PN-junction effect, which is responsible for the transistor’s switching and current conducting capabilities.The working principle of the RJP6085DPN-00#T2 module is similar to that of other IGBTs. It works by controlling the voltage and current between the two PN-junctions, allowing the current to be switched on and off as desired.The main advantages of the RJP6085DPN-00#T2 IGBT module are its compact size and high power rating. This makes it suitable for applications where space is limited or where high power levels are needed. Furthermore, its low-resistance features enable it to provide better power efficiency and heat dissipation characteristics.Overall, the RJP6085DPN-00#T2 is a versatile and reliable device that is suitable for a wide range of applications. It is well-suited for use in automotive, industrial, and medical applications, as well as in power converters, motor drives, and power electronics systems.

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