RJP60D0DPP-M0#T2 Allicdata Electronics
Allicdata Part #:

RJP60D0DPP-M0#T2-ND

Manufacturer Part#:

RJP60D0DPP-M0#T2

Price: $ 2.07
Product Category:

Discrete Semiconductor Products

Manufacturer: Renesas Electronics America
Short Description: IGBT 600V 45A 35W TO-220FL
More Detail: IGBT 600V 45A 35W Through Hole TO-220FL
DataSheet: RJP60D0DPP-M0#T2 datasheetRJP60D0DPP-M0#T2 Datasheet/PDF
Quantity: 68
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
1 +: $ 1.87740
10 +: $ 1.67643
25 +: $ 1.50872
Stock 68Can Ship Immediately
$ 2.07
Specifications
Series: --
Packaging: Tube 
Lead Free Status / RoHS Status: --
Part Status: Active
Moisture Sensitivity Level (MSL): --
IGBT Type: --
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 45A
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 22A
Power - Max: 35W
Switching Energy: --
Input Type: Standard
Gate Charge: 45nC
Td (on/off) @ 25°C: 35ns/90ns
Test Condition: 300V, 22A, 5 Ohm, 15V
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Supplier Device Package: TO-220FL
Base Part Number: RJP60D
Description

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The RJP60D0DPP-M0#T2 IGBT module is a single type IGBT chip with multiple components in a complete unit. It is a superb device for use in a variety of applications and is very commonly used in many fields today.

Application Field

It has become enormously popular in the market due to its versatility in many different roles. This module is mainly used in electrical power conversion and transmission, such as unipolar switching, switching power supply, and motor control applications. It is also used in the automotive industry and consumer product industry as a high power switching device.

In addition, it is also used in various AC and DC power converters such as inverters, DC-DC converters, active filters and line frequency converters. It can be found in modem electronic gadgets such as gaming consoles, home appliances, mobile phones and other high power applications.

Working Principle

The features of the RJP60D0DPP-M0#T2 IGBT module include significantly higher power density and excellent reverse conduction capability. It operates at an operating voltage of 600V and has a high switching speed of 1.7ns. It has a low ON resistance of 40 m? and is capable of carrying a load at a current level of up to 60A.

The IGBT works on the principle of insulation-gate bipolar transistor (IGBT). It combines the best features of both a traditional transistor and an insulated-gate field effect transistor (MOSFET). In this device, a MOSFET is integrated with a bipolar transistor. This allows for higher current ratings and much faster switching speeds compared to a traditional MOSFET.

The module has an internal integrated Schottky diode with a high reverse voltage rating of 600V that helps to provide overload protection. The IGBT also provides superior thermal performance and can work well in ambient temperatures ranging from -55°C to 150°C.

In summary, the RJP60D0DPP-M0#T2 IGBT module is a high power device with many capabilities and is well suited for many different fields of applications. It offers low on resistance, high switching speed, high current capability, overload protection and excellent thermal performance. Therefore, this IGBT module is the perfect choice for many electronic applications ranging from automotive and consumer electronics, to medical and industrial applications.

The specific data is subject to PDF, and the above content is for reference

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