RLZTE-1113B

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The RZLTE-1113B is a single Zener diode suitable for use in a variety of applications. It is a selection of silicon epitaxial junction diodes that offer excellent clamping and breakdown characteristics. The RZLTE-1113B diode offers high performance and excellent temperature stability, as well as a robust construction for dependable operation and long life.

The RZLTE-1113B diode has a wide range of applications, including voltage regulation, voltage limiting, transistor biasing, power flashing, high voltage clamping, voltage snubbers and protection circuits. It is commonly used in power supplies, computers, televisions, automotive electronics, and various other electrical and electronic devices.

The RZLTE-1113B diode is made up of a single PN junction. It is constructed with a lightly doped N-type (N-) layer, a heavily doped P-type (P+) layer and a heavily doped N-type (N++) layer. The N- layer has a very low concentration of donor electrons, which creates a more negative potential than the P+ layer. The N++ layer has a very high concentration of donor electrons, which creates a more positive potential than the N- layer. The difference between the P+ and N++ layer is the Zener voltage. This voltage indicates the voltage at which the diode will start to conduct. For the RZLTE-1113B, the Zener voltage is 10.0 volts.

The RZLTE-1113B diode works by allowing the current to pass through the PN junction when the applied voltage is below the Zener voltage. When the applied voltage exceeds the Zener voltage, the PN junction will start to conduct, allowing electricity to flow freely in both directions. This process helps to protect circuitry and devices from power surges and voltage spikes. The Zener diode also works as a voltage regulator, as it helps keep the output voltage of the circuit within a certain range.

The RZLTE-1113B diode has a variety of features, including a high forward bias current clamping, reverse and surge current protection, a high reverse breakdown voltage and a low maximum reverse voltage drop. It is also RoHS compliant, making it suitable for use in a range of electronic applications. In addition, the diode has a maximum operating temperature of 150°C and a storage temperature of -55°C to +150°C.

The reliable and versatile RZLTE-1113B diode is an excellent choice for a variety of applications. It offers superior performance, reliable operation and long life, making it ideal for a range of electrical and electronic applications.

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