RLZTE-1116B Allicdata Electronics
Allicdata Part #:

RLZTE-1116B-ND

Manufacturer Part#:

RLZTE-1116B

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ROHM Semiconductor
Short Description: DIODE ZENER 16V 500MW LLDS
More Detail: Zener Diode 16V 500mW ±3% Surface Mount LLDS
DataSheet: RLZTE-1116B datasheetRLZTE-1116B Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Voltage - Zener (Nom) (Vz): 16V
Tolerance: ±3%
Power - Max: 500mW
Impedance (Max) (Zzt): 18 Ohms
Current - Reverse Leakage @ Vr: 200nA @ 12V
Operating Temperature: --
Mounting Type: Surface Mount
Package / Case: DO-213AC, MINI-MELF, SOD-80
Supplier Device Package: LLDS
Description

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The RLZTE-1116B is a single Zener diode which is widely used for various applications. It is designed for both general-purpose and active switching applications. It is suitable for use in circuits which require low noise, high power supply rejection ratio (PSRR), and low input voltage. The diode is available in a variety of packages and with a variety of operating voltages.

The RLZTE-1116B is a planar, bronze clad, dual cathode, 180-degree single Zener diode. The device has a low reverse leakage current and is therefore suitable for use in active switching applications. Due to its low on-resistance and wide operating range, the diode is ideal for use in circuits which require high efficiency and low noise. Its low reverse leakage current means the diode consumes very little power even when the input voltage is low.

The RLZTE-1116B is a low voltage, low power, high current diode. It is capable of providing up to 250 mA of operating current, and can operate at voltages as low as 5 volts. It is capable of providing a PSRR of greater than 75 dB, which makes it suitable for use in circuits which require low noise. The diode’s low turn-on voltage and low on-resistance make it ideal for use in active switching applications.

The RLZTE-1116B’s working principle is based on the Zener breakdown mechanism. This mechanism results in a voltage drop across the diode when it is subjected to a large enough amount of reverse bias. This voltage drop causes an increase in voltage at the diode’s anode due to the PN junction. The diode is also capable of providing a stable voltage reference when a small voltage is applied to its cathode. This property makes it ideal for use in voltage regulation and voltage reference circuits.

The RLZTE-1116B is often used in power supply applications, active switching circuits, voltage regulation and reference circuits, and industrial and automotive applications. For automotive applications, the diode is used in voltage converters, inverters, starters, sensors, and other circuits. In industrial and power supply applications, the diode is often used as an isolator, voltage stabilizer, and as a reference voltage source. The diode is also widely used in active switching circuits, such as stepper motors, and in voltage regulation and reference circuits.

In conclusion, the RLZTE-1116B is a low voltage, low power, high current diode which is widely used for various applications. Its low reverse current makes it ideal for active switching applications, and its PSRR of greater than 75 dB makes it suitable for use in circuits which require low noise. Its working principle is based on the Zener breakdown mechanism, which causes a voltage drop across the diode when it is subjected to a large enough amount of reverse bias. The diode is capable of providing a stable voltage reference when a small voltage is applied to its cathode. It is commonly used in a variety of applications, including power supply applications, active switching circuits, voltage regulation and reference circuits, and industrial and automotive applications.

The specific data is subject to PDF, and the above content is for reference

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