Allicdata Part #: | RLZTE-114.3B-ND |
Manufacturer Part#: |
RLZTE-114.3B |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ROHM Semiconductor |
Short Description: | DIODE ZENER 4.3V 500MW LLDS |
More Detail: | Zener Diode 4.3V 500mW ±3% Surface Mount LLDS |
DataSheet: | RLZTE-114.3B Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Voltage - Zener (Nom) (Vz): | 4.3V |
Tolerance: | ±3% |
Power - Max: | 500mW |
Impedance (Max) (Zzt): | 40 Ohms |
Current - Reverse Leakage @ Vr: | 5µA @ 1V |
Operating Temperature: | -- |
Mounting Type: | Surface Mount |
Package / Case: | DO-213AC, MINI-MELF, SOD-80 |
Supplier Device Package: | LLDS |
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The RLZTE-114.3B is a single Zener diode designed to provide efficient electrical isolation and regulation in applications where short-circuit protection is needed. It is composed of three terminals and has a maximum power rating of 1 watt.Its reverse breakdown voltage is 118V.
This diode is mainly used for voltage regulation in portable devices. It is used for providing a stable and uniform DC voltage output even in scenarios of varying input supply. The RLZTE-114.3B is designed to handle reverse voltages from 100 volts up to 120 volts. It is also designed to withstand short-circuit currents up to three amperes.
The working principle of this diode is based off of the phenomenon known as Zener Breakdown. Zener breakdown consists of two distinct processes. The first is Electron Avalanche, which occurs when electrons get accelerated in an electric field and collide with other atoms in a semiconductor crystal lattice, thus producing more electrons. The second is known as Zener Tunneling, where electrons near the boundary between the semiconductor and the electric field tunnel through the crystal lattice and accumulate on the opposite side.
This process produces a very large reverse current and results in an output voltage that is constant regardless of changes in input voltage. By using Zener diodes, electronic circuits can be designed efficiently to regulate their power supply to ensure that the devices operate within the desired range. Apart from its use in voltage regulation, the RLZTE-114.3B is also used in temperature measurements, oscillators, switching circuits, and digital logic.
The RLZTE-114.3B has some limitations. It is not suitable for applications that require very high voltages or very low voltages. It is also not suitable for extremely low frequency or very high frequency operation. Furthermore, because of its low power rating, it is not recommended for use in high power applications.
In conclusion, the RLZTE-114.3B is a single Zener diode that is highly effective in providing efficient electrical isolation and regulation in applications where short-circuit protection is needed. It is widely-used for voltage regulation, temperature measurements, oscillators, switching circuits, and digital logic, though users should exercise caution when using this diode for applications that require very high and low voltages.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
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