Allicdata Part #: | RLZTE-116.8B-ND |
Manufacturer Part#: |
RLZTE-116.8B |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ROHM Semiconductor |
Short Description: | DIODE ZENER 6.8V 500MW LLDS |
More Detail: | Zener Diode 6.8V 500mW ±3% Surface Mount LLDS |
DataSheet: | RLZTE-116.8B Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Voltage - Zener (Nom) (Vz): | 6.8V |
Tolerance: | ±3% |
Power - Max: | 500mW |
Impedance (Max) (Zzt): | 8 Ohms |
Current - Reverse Leakage @ Vr: | 2µA @ 3.5V |
Operating Temperature: | -- |
Mounting Type: | Surface Mount |
Package / Case: | DO-213AC, MINI-MELF, SOD-80 |
Supplier Device Package: | LLDS |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The RLZTE-116.8B single Zener diode is a high-performance component that\'s used in many different applications. It is designed to provide a stable, low-voltage power source. It works by regulating the voltage passing through it, allowing only a certain amount of voltage to pass and preventing any higher voltages from doing any damage.
This diode is useful in fields such as power supplies for electronic control systems, AC-DC converters, power regulators and switching power supplies. It is normally used as a voltage regulator to maintain a constant voltage across the device, even when the input voltage varies. In AC-DC converters, it acts as a voltage regulator, preventing damage from high-current AC spikes. Additionally, it can be used to direct current in a certain direction and to block the current in the opposite direction.
The RLZTE-116.8B Zener diode is constructed of semiconductor material and consists of a p-type and n-type layers. The two layers are separated by a barrier, known as the Zener or avalanche region. When a voltage is applied between the p-type and n-type layers, the voltage will cause electrons to move from the p-type to the n-type layer, creating an excess of electrons on the n-type layer.
In order for the diode to efficiently regulate voltage, it must be operated in the breakdown region, where the voltage across the diode is greater than the Zener voltage. As the voltage increases, electrons in the n-type layer become more mobile, and will use the Zener voltage as a threshold to move from the n-type layer to the p-type layer. This process leads to a breakdown of the barrier, allowing current to flow in both directions.
The RLZTE-116.8B Zener diode is a highly efficient component, offering lower forward voltage drop and higher power capacity compared to other Zener diodes. It also features a reverse recovery time of as low as 1 nanosecond, allowing it to switch quickly, allowing it to regulate voltage more efficiently. It is available in a variety of packages and has a current rating of up to 2.5A, making it suitable for higher current applications.
Overall, the RLZTE-116.8B single Zener diode is a highly efficient and reliable component, making it a great choice for any application that requires voltage regulation or current direction. It is available in a variety of packages, making it suitable for a range of applications, and its low reverse recovery time makes it suitable for higher current applications. With its high efficiency and reliability, it is an excellent choice for any application that requires reliable operational performance.
The specific data is subject to PDF, and the above content is for reference
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