Allicdata Part #: | RMPG06BHE3/54-ND |
Manufacturer Part#: |
RMPG06BHE3/54 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Semiconductor Diodes Division |
Short Description: | DIODE GEN PURP 100V 1A MPG06 |
More Detail: | Diode Standard 100V 1A Through Hole MPG06 |
DataSheet: | RMPG06BHE3/54 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 100V |
Current - Average Rectified (Io): | 1A |
Voltage - Forward (Vf) (Max) @ If: | 1.3V @ 1A |
Speed: | Fast Recovery = 200mA (Io) |
Reverse Recovery Time (trr): | 150ns |
Current - Reverse Leakage @ Vr: | 5µA @ 100V |
Capacitance @ Vr, F: | 6.6pF @ 4V, 1MHz |
Mounting Type: | Through Hole |
Package / Case: | MPG06, Axial |
Supplier Device Package: | MPG06 |
Operating Temperature - Junction: | -55°C ~ 150°C |
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Diodes - Rectifiers - Single
The RMPG06BHE3/54 is a single diode rectifier. The device is ideal for automotive, industrial and other applications that require fast switching and low leakage of current. It can also be utilized in UPS systems, computer memory, and other sensitive electronic applications.
The RMPG06BHE3/54 is a single Schottky barrier diode. It is an improvement on a standard rectifier diode because it is specifically designed to allow a fast switching time and very low reverse leakage current. In addition, it has a low on-state voltage drop and can operate in a wide range of temperatures.
The diode\'s working principle is based on the wider depletion region of the semiconductor junction device. When the diode is subjected to voltage, it creates a depletion region that blocks further current flow. The wider depletion region improves on standard rectifier circuits because of its speed; the diode can switch very quickly. The diode also has a low reverse current leakage and a low on-state voltage drop.
The RMPG06BHE3/54 is suitable for a variety of applications. It is commonly used for automotive, industrial, and other applications that require fast switching, low leakage of current, and low losses. It is often used in UPS systems, computer memory, and other sensitive electronic applications, as well as for power suppliers for varying motors. The device is also well suited for portable, wireless, and data communications applications.
The RMPG06BHE3/54 is a robust and reliable single diode rectifier, providing a low forward voltage drop, low leakage current and fast switching times. These benefits make the diode suitable for a variety of applications, including automotive and industrial. In addition, the device can operate in a wide range of temperatures, allowing it to be used in a variety of demanding environments.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
RMPG06D-E3/54 | Vishay Semic... | 0.06 $ | 5500 | DIODE GEN PURP 200V 1A MP... |
RMPG06JHE3_A/54 | Vishay Semic... | 0.08 $ | 1000 | DIODE GEN PURP 600V 1A MP... |
RMPG06J-E3/54 | Vishay Semic... | 0.06 $ | 1000 | DIODE GEN PURP 600V 1A MP... |
RMPG06DHE3/73 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 200V 1A MP... |
RMPG06GHE3/73 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 400V 1A MP... |
RMPG06JHE3/73 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 600V 1A MP... |
RMPG06D-E3/73 | Vishay Semic... | 0.06 $ | 1000 | DIODE GEN PURP 200V 1A MP... |
RMPG06G-E3/73 | Vishay Semic... | 0.07 $ | 1000 | DIODE GEN PURP 400V 1A MP... |
RMPG06J-E3/73 | Vishay Semic... | 0.06 $ | 1000 | DIODE GEN PURP 600V 1A MP... |
RMPG06B-E3/54 | Vishay Semic... | 0.06 $ | 1000 | DIODE GEN PURP 100V 1A MP... |
RMPG06G-E3/54 | Vishay Semic... | 0.06 $ | 1000 | DIODE GEN PURP 400V 1A MP... |
RMPG06K-E3/54 | Vishay Semic... | 0.06 $ | 1000 | DIODE GEN PURP 800V 1A MP... |
RMPG06K-E3/73 | Vishay Semic... | 0.06 $ | 1000 | DIODE GPP 1A 800V 250NS M... |
RMPG06BHE3_A/54 | Vishay Semic... | 0.07 $ | 1000 | DIODE GEN PURP 100V 1A MP... |
RMPG06DHE3_A/54 | Vishay Semic... | 0.07 $ | 1000 | DIODE GEN PURP 200V 1A MP... |
RMPG06DHE3_A/73 | Vishay Semic... | 0.07 $ | 1000 | DIODE GEN PURP 200V 1A MP... |
RMPG06GHE3_A/54 | Vishay Semic... | 0.07 $ | 1000 | DIODE GEN PURP 400V 1A MP... |
RMPG06GHE3_A/73 | Vishay Semic... | 0.07 $ | 1000 | DIODE GEN PURP 400V 1A MP... |
RMPG06JHE3_A/73 | Vishay Semic... | 0.07 $ | 1000 | DIODE GEN PURP 600V 1A MP... |
RMPG06KHE3_A/54 | Vishay Semic... | 0.07 $ | 1000 | DIODE GEN PURP 800V 1A MP... |
RMPG06BHE3_A/53 | Vishay Semic... | 0.09 $ | 1000 | DIODE GPP 1A 100V 150NS M... |
RMPG06D-E3/100 | Vishay Semic... | 0.09 $ | 1000 | DIODE GPP 1A 200V 150NS M... |
RMPG06DHE3_A/53 | Vishay Semic... | 0.09 $ | 1000 | DIODE GPP 1A 200V 150NS M... |
RMPG06G-E3/100 | Vishay Semic... | 0.09 $ | 1000 | DIODE GPP 1A 400V 150NS M... |
RMPG06GHE3_A/53 | Vishay Semic... | 0.09 $ | 1000 | DIODE GPP 1A 400V 150NS M... |
RMPG06J-E3/100 | Vishay Semic... | 0.09 $ | 1000 | DIODE GPP 1A 600V 200NS M... |
RMPG06JHE3_A/53 | Vishay Semic... | 0.09 $ | 1000 | DIODE GPP 1A 600V 200NS M... |
RMPG06B-E3/53 | Vishay Semic... | 0.1 $ | 1000 | DIODE GPP 1A 100V 150NS M... |
RMPG06D-E3/53 | Vishay Semic... | 0.1 $ | 1000 | DIODE GPP 1A 200V 150NS M... |
RMPG06G-E3/53 | Vishay Semic... | 0.12 $ | 1000 | DIODE GPP 1A 400V 150NS M... |
RMPG06J-E3/53 | Vishay Semic... | 0.1 $ | 1000 | DIODE GPP 1A 600V 200NS M... |
RMPG06GHE3_A/100 | Vishay Semic... | 0.13 $ | 1000 | DIODE GPP 1A 400V 150NS M... |
RMPG06BHE3/54 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 100V 1A MP... |
RMPG06DHE3/54 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 200V 1A MP... |
RMPG06GHE3/54 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 400V 1A MP... |
RMPG06JHE3/54 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 600V 1A MP... |
RMPG06KHE3/54 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 800V 1A MP... |
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