Allicdata Part #: | RMPG06JHE3_A/73-ND |
Manufacturer Part#: |
RMPG06JHE3_A/73 |
Price: | $ 0.07 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Semiconductor Diodes Division |
Short Description: | DIODE GEN PURP 600V 1A MPG06 |
More Detail: | Diode Standard 600V 1A Through Hole MPG06 |
DataSheet: | RMPG06JHE3_A/73 Datasheet/PDF |
Quantity: | 1000 |
12000 +: | $ 0.06427 |
Specifications
Series: | -- |
Packaging: | Tape & Box (TB) |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 600V |
Current - Average Rectified (Io): | 1A |
Voltage - Forward (Vf) (Max) @ If: | 1.3V @ 1A |
Speed: | Fast Recovery = 200mA (Io) |
Reverse Recovery Time (trr): | 200ns |
Current - Reverse Leakage @ Vr: | 5µA @ 600V |
Capacitance @ Vr, F: | 6.6pF @ 4V, 1MHz |
Mounting Type: | Through Hole |
Package / Case: | MPG06, Axial |
Supplier Device Package: | MPG06 |
Operating Temperature - Junction: | -55°C ~ 150°C |
Base Part Number: | RMPG06J |
Description
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Diodes - Rectifiers - Single
The RMPG06JHE3_A/73 is a diode rectifier manufactured by Renesas Electronics Corporation. It is a single diode for switching, rectification, and general-purpose. The RMPG06JHE3_A/73 has a maximum repetitive reverse voltage rating of 600V, maximum average forward rectified current of 3.0A and a maximum forward voltage drop of 1.1V at 0.3A. It has an operating temperature range of -40 to +125 Celsius and a storage temperature range of -40 to +125 Celsius.It can be used in a variety of applications such as rectification in high-current applications and general-purpose switching. It is also used in power supplies and motor control applications. Working PrincipleThe RMPG06JHE3_A/73 operates on the principle of rectification. This is a process of converting alternating current (AC) to direct current (DC) by passing current through a diode. The diode allows current to flow in one direction and blocks the flow in the opposite direction. When a positive voltage is applied to the anode side, the voltage across the diode is lowered by the forward voltage drop, and a current flows through the diode. When the negative voltage is applied to the cathode side, the diode blocks the current and no current flows. The RMPG06JHE3_A/73 is designed to handle higher current loads and is capable of withstanding repetitive reverse voltages up to 600V.AdvantagesThe RMPG06JHE3_A/73 has several advantages over other standard rectifiers. It features a low forward voltage drop, which means that the power dissipated when using the device is much less than with other rectifiers. Its high maximum repetitive reverse voltage rating of 600V allows it to handle higher voltages without damage. The diode also has a wide operating temperature range, meaning it can be used in applications that require exposure to high and low temperatures. The RMPG06JHE3_A/73 is a cost-effective option for rectification tasks in a variety of applications, making it a versatile and reliable device for many different types of projects.ConclusionThe RMPG06JHE3_A/73 is a single diode used for rectification, switching, and general-purpose applications. It is capable of withstanding a maximum repetitive reverse voltage of 600V and has a wide operating temperature range. It has a low forward voltage drop and is a cost-effective option for rectification tasks. Its versatility makes it an ideal choice for a variety of projects.The specific data is subject to PDF, and the above content is for reference
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RMPG06JHE3/73 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 600V 1A MP... |
RMPG06D-E3/73 | Vishay Semic... | 0.06 $ | 1000 | DIODE GEN PURP 200V 1A MP... |
RMPG06G-E3/73 | Vishay Semic... | 0.07 $ | 1000 | DIODE GEN PURP 400V 1A MP... |
RMPG06J-E3/73 | Vishay Semic... | 0.06 $ | 1000 | DIODE GEN PURP 600V 1A MP... |
RMPG06B-E3/54 | Vishay Semic... | 0.06 $ | 1000 | DIODE GEN PURP 100V 1A MP... |
RMPG06G-E3/54 | Vishay Semic... | 0.06 $ | 1000 | DIODE GEN PURP 400V 1A MP... |
RMPG06K-E3/54 | Vishay Semic... | 0.06 $ | 1000 | DIODE GEN PURP 800V 1A MP... |
RMPG06K-E3/73 | Vishay Semic... | 0.06 $ | 1000 | DIODE GPP 1A 800V 250NS M... |
RMPG06BHE3_A/54 | Vishay Semic... | 0.07 $ | 1000 | DIODE GEN PURP 100V 1A MP... |
RMPG06DHE3_A/54 | Vishay Semic... | 0.07 $ | 1000 | DIODE GEN PURP 200V 1A MP... |
RMPG06DHE3_A/73 | Vishay Semic... | 0.07 $ | 1000 | DIODE GEN PURP 200V 1A MP... |
RMPG06GHE3_A/54 | Vishay Semic... | 0.07 $ | 1000 | DIODE GEN PURP 400V 1A MP... |
RMPG06GHE3_A/73 | Vishay Semic... | 0.07 $ | 1000 | DIODE GEN PURP 400V 1A MP... |
RMPG06JHE3_A/73 | Vishay Semic... | 0.07 $ | 1000 | DIODE GEN PURP 600V 1A MP... |
RMPG06KHE3_A/54 | Vishay Semic... | 0.07 $ | 1000 | DIODE GEN PURP 800V 1A MP... |
RMPG06BHE3_A/53 | Vishay Semic... | 0.09 $ | 1000 | DIODE GPP 1A 100V 150NS M... |
RMPG06D-E3/100 | Vishay Semic... | 0.09 $ | 1000 | DIODE GPP 1A 200V 150NS M... |
RMPG06DHE3_A/53 | Vishay Semic... | 0.09 $ | 1000 | DIODE GPP 1A 200V 150NS M... |
RMPG06G-E3/100 | Vishay Semic... | 0.09 $ | 1000 | DIODE GPP 1A 400V 150NS M... |
RMPG06GHE3_A/53 | Vishay Semic... | 0.09 $ | 1000 | DIODE GPP 1A 400V 150NS M... |
RMPG06J-E3/100 | Vishay Semic... | 0.09 $ | 1000 | DIODE GPP 1A 600V 200NS M... |
RMPG06JHE3_A/53 | Vishay Semic... | 0.09 $ | 1000 | DIODE GPP 1A 600V 200NS M... |
RMPG06B-E3/53 | Vishay Semic... | 0.1 $ | 1000 | DIODE GPP 1A 100V 150NS M... |
RMPG06D-E3/53 | Vishay Semic... | 0.1 $ | 1000 | DIODE GPP 1A 200V 150NS M... |
RMPG06G-E3/53 | Vishay Semic... | 0.12 $ | 1000 | DIODE GPP 1A 400V 150NS M... |
RMPG06J-E3/53 | Vishay Semic... | 0.1 $ | 1000 | DIODE GPP 1A 600V 200NS M... |
RMPG06GHE3_A/100 | Vishay Semic... | 0.13 $ | 1000 | DIODE GPP 1A 400V 150NS M... |
RMPG06BHE3/54 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 100V 1A MP... |
RMPG06DHE3/54 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 200V 1A MP... |
RMPG06GHE3/54 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 400V 1A MP... |
RMPG06JHE3/54 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 600V 1A MP... |
RMPG06KHE3/54 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 800V 1A MP... |
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