RMPG06D-E3/53

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Diodes - Rectifiers - Single

The RMPG06D-E3/53 is a 600V 6A Schottky barrier rectifier, which is designed for use in applications such as switch mode power supplies, welding machiners and solar panels. It is also suitable for low power loss and high temperature operation.The RMPG06D-E3/53 is a single device that is made up of a silicon substrate, a junction barrier and a metal contact. This combination of materials results in a low forward voltage drop and a low reverse recovery time.The working principle of the RMPG06D-E3/53 is based on the Schottky Barrier Rectifier (SBR) effect. This effect occurs when the current carriers (electrons or holes) are blocked by a metal-semiconductor contact. The current carriers are then forced to flow around the barrier, resulting in a forward biased diode.An SBR consists of two regions; the anode and the cathode. A metal semiconductor contact is formed between the two regions. When the voltage applied across the two regions is greater than the barrier potential, the current carriers are forced to cross the barrier and flow through the semiconductor material.The RMPG06D-E3/53 is designed to provide high efficiency and reduce power losses. The current rating of the device is 6A and the forward voltage drop is 0.68 V. The reverse recovery time of the device is 10 ns, which is a measure of the time it takes for the device to go from full conduction to reverse blocking. The maximum junction temperature rating is 150 °C, which protects the device from thermal overloading.In summary, the RMPG06D-E3/53 is a single device that is suitable for low power loss and high temperature operation applications. It has a low forward voltage drop and a low reverse recovery time. The current rating of the device is 6A and the forward voltage drop is 0.68 V. The maximum junction temperature rating is 150 °C.

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