RN771VFHTE-17 Allicdata Electronics

RN771VFHTE-17 Discrete Semiconductor Products

Allicdata Part #:

RN771VFHTE-17TR-ND

Manufacturer Part#:

RN771VFHTE-17

Price: $ 0.06
Product Category:

Discrete Semiconductor Products

Manufacturer: ROHM Semiconductor
Short Description: PIN DIODES (CORRESPONDS TO AEC-Q
More Detail: RF Diode PIN - Single 50V 50mA UMD2
DataSheet: RN771VFHTE-17 datasheetRN771VFHTE-17 Datasheet/PDF
Quantity: 3000
3000 +: $ 0.05863
Stock 3000Can Ship Immediately
$ 0.06
Specifications
Series: Automotive, AEC-Q101
Packaging: Tape & Reel (TR) 
Part Status: Active
Diode Type: PIN - Single
Voltage - Peak Reverse (Max): 50V
Current - Max: 50mA
Capacitance @ Vr, F: 0.9pF @ 35V, 1MHz
Resistance @ If, F: 7 Ohm @ 10mA, 100MHz
Operating Temperature: 150°C (TJ)
Package / Case: SC-90, SOD-323F
Supplier Device Package: UMD2
Description

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Diodes are integral components in most electrical and electronic devices, in particular RF (radio frequency) applications. The RN771VFHTE-17 is a high frequency, gallium arsenide Schottky barrier diode, which has been designed for use in a variety of RF circuits, ranging from oscillators to amplifiers. This document will discuss the functional principles and applications of the diode.

The functioning of the Schottky barrier in this diode is based upon the principle of quantum confinement. When electrons are confined, they become more easily excited, leading to a wider range of frequencies they can absorb and emit. This greater range allows the diode to maintain the desirable characteristics of a Schottky barrier in a much larger range of frequencies than any other type of semiconductor. The high frequencies allow the RN771VFHTE-17 diode to be used in more sophisticated electronic circuits, as the faster switching speeds of the more advanced components require faster signals.

In particular, the RN771VFHTE-17 is well-suited for applications in oscillator circuits. In such circuits, it acts as a variable frequency tuned circuit. As it is capable of operating over a frequency range of up to 5GHz, it is well suited for use in oscillators like phase-locked loops and frequency synthesizers. The diode also has a low diode noise figure, ensuring clear signals even at the highest frequencies.

The diode can also be used in RF amplifiers, especially low-noise amplifiers. Here, it acts as an amplifier for small signal signals. The diode is able to maintain a large signal-to-noise ratio due to its low noise figure. The signal is then able to pass through to the output with minimal distortion.

The RN771VFHTE-17 is an excellent choice for use in many types of RF electronic devices. Its quantum confinement technology, wide frequency range, and low noise figure make it suitable for use in even the most sophisticated of electronic designs. It can be used in oscillator circuits as a variable frequency tuned circuit, and in amplifiers such as low noise amplifiers to provide clean signals.

The specific data is subject to PDF, and the above content is for reference

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