RN779FT106 Discrete Semiconductor Products |
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Allicdata Part #: | RN779FT106TR-ND |
Manufacturer Part#: |
RN779FT106 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ROHM Semiconductor |
Short Description: | DIODE PIN HF SW 50V 50MA UMD3 |
More Detail: | RF Diode PIN - 1 Pair Series Connection 50V 50mA ... |
DataSheet: | RN779FT106 Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | PIN - 1 Pair Series Connection |
Voltage - Peak Reverse (Max): | 50V |
Current - Max: | 50mA |
Capacitance @ Vr, F: | 0.9pF @ 35V, 1MHz |
Resistance @ If, F: | 7 Ohm @ 10mA, 100MHz |
Operating Temperature: | 150°C (TJ) |
Package / Case: | SC-70, SOT-323 |
Supplier Device Package: | UMD3 |
Base Part Number: | RN779 |
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RN779FT106 is a diodes. It belongs to RF, which stands for radio frequency. RF can act as both an electromagnetic field and an information field, making it an ideal technology for communication and broadcasting. The RN779FT106 is a dual-gate bipolar transistor, which is used in a variety of applications, such as phase shifters, RF attenuators, directional couplers and mixers.
The RN779FT106 is a depletion mode field effect transistor with high input impedance and low gain. It is a three terminal device, with the first two terminals being the gate and the third terminal being the collector. The RN779FT106 has an N-type base region and an P-type emitting region. The base region is connected to the gate terminal, and the emitters are connected to the collector terminal. The current flow between these two regions is determined by the gate voltage.
The working principle of the RN779FT106 is that of a voltage-controlled impedance device. When the gate voltage is applied, the impedance between the gate and the collector changes. This change in impedance is used to control the current through the device. The current flows in the direction determined by the polarity of the applied voltage. Thus, the RN779FT106 can be used to amplify, attenuate or even invert the applied signal. The device also has low noise and high linearity characteristics, making it an ideal choice for a variety of RF applications.
The RN779FT106 can be used in many different types of applications. It has been used in radio transmitters and receivers, modulators and demodulators, Mixers, Phase Shifters, Attenuators, as well as low loss filters. It is also used in several wireless communication systems, such as wireless local area networks (WLANs), cellular networks, and satellite communications. The device is also used in medical applications, such as managing soft tissue replacement implants and prostheses.
The RN779FT106 is a very versatile and powerful device and is used in a wide range of applications. Its high performance and wide range of applications make it an ideal choice for many RF applications. With its low noise and high linearity, the RN779FT106 can provide reliable, high-quality performance in various RF applications. It is a reliable and cost-effective choice, making it a popular choice for many RF applications.
The specific data is subject to PDF, and the above content is for reference
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