RN779DT146 Discrete Semiconductor Products |
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Allicdata Part #: | RN779DT146TR-ND |
Manufacturer Part#: |
RN779DT146 |
Price: | $ 0.10 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ROHM Semiconductor |
Short Description: | DIODE PIN 50V 50MA SMD3 |
More Detail: | RF Diode PIN - 1 Pair Series Connection 50V 50mA ... |
DataSheet: | RN779DT146 Datasheet/PDF |
Quantity: | 1000 |
3000 +: | $ 0.08826 |
6000 +: | $ 0.08291 |
15000 +: | $ 0.07756 |
30000 +: | $ 0.07488 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | PIN - 1 Pair Series Connection |
Voltage - Peak Reverse (Max): | 50V |
Current - Max: | 50mA |
Capacitance @ Vr, F: | 0.9pF @ 35V, 1MHz |
Resistance @ If, F: | 7 Ohm @ 10mA, 100MHz |
Operating Temperature: | 150°C (TJ) |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | SMD3 |
Base Part Number: | RN779 |
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The RN779DT146 is a N-Channel MOSFET transistor used in common amplifier circuits and for relay and solenoid driving. This transistor is used in many applications and is highly suitable for radio frequency switching. It is produced by Semtech Corporation, a leading integrated circuit designer and global distributor of discrete semiconductor and passive components.
The RN779DT146 is composed of four series connected N-Channel MOSFET transistors; each transistor has its own source and drain, as well as a gate connected to the other three series connected transistors. The source and drain of each of the transistors form the terminals of the four series transistors and the gate connection forms a common terminal.
The RN779DT146 has a maximum drain current of 150mA and a maximum drain-source voltage of 5V. It can provide for a low on-resistance of 2 ohms. This low resistance allows for a high-speed switching response, making it ideal for use in relay or solenoid driving circuits. Additionally, it can provide improved immunity to noise, crosstalk, and interference.
The RN779DT146 is commonly used in various radio frequency switching applications, such as high frequency receiver and transmitter circuits, variable capacitors, and attenuators. It has also been used in amplifier circuits because of its low on-resistance and high speed applications. For example, it has been employed for mixed-mode operation because of its low switching times, low power consumption, and low voltage noise levels.
In terms of its working principle, the RN779DT146 works by applying a voltage to the gate of the N-Channel MOSFET transistor. This voltage, known as the gate voltage, increases the conductivity between the source and the drain, allowing for a current flow. The gate voltage is adjusted based on the desired current flow, which can then be used to control the flow of the current through the transistor.
In addition to controlling the current, the gate voltage can also be used to turn the transistor off. If the gate voltage is reduced to a very low level, the current flow between the source and the drain of the transistor can be blocked, and the transistor will no longer conduct any current. This ability to block current is an important characteristic of the RN779DT146, as it allows for precise control in radio frequency applications.
The RN779DT146 is a very versatile transistor and has become widely used in various radio frequency applications, such as relay and solenoid driving, high frequency receiver and transmitter circuits, and amplifier circuits. It is capable of fast switching speeds, low noise, and low power consumption, making it an excellent choice for these types of applications. Furthermore, its low on-resistance allows for improved immunity to noise, crosstalk, and interference. These characteristics make the RN779DT146 an ideal choice for a number of RF applications.
The specific data is subject to PDF, and the above content is for reference
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