Allicdata Part #: | RS1J-E3/61TGITR-ND |
Manufacturer Part#: |
RS1J-E3/61T |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Semiconductor Diodes Division |
Short Description: | DIODE GEN PURP 600V 1A DO214AC |
More Detail: | Diode Standard 600V 1A Surface Mount DO-214AC (SMA... |
DataSheet: | RS1J-E3/61T Datasheet/PDF |
Quantity: | 34200 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 600V |
Current - Average Rectified (Io): | 1A |
Voltage - Forward (Vf) (Max) @ If: | 1.3V @ 1A |
Speed: | Fast Recovery = 200mA (Io) |
Reverse Recovery Time (trr): | 250ns |
Current - Reverse Leakage @ Vr: | 5µA @ 600V |
Capacitance @ Vr, F: | 7pF @ 4V, 1MHz |
Mounting Type: | Surface Mount |
Package / Case: | DO-214AC, SMA |
Supplier Device Package: | DO-214AC (SMA) |
Operating Temperature - Junction: | -55°C ~ 150°C |
Base Part Number: | RS1J |
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Diodes are the most common type of electrical component. They are used to control and regulate the flow of electricity in circuits. The RS1J-E3/61T is a type of single diode rectifier specially designed for use in telecommunications applications. This article will explore the application field and working principle of the RS1J-E3/61T.
The RS1J-E3/61T is a compact and cost-effective solution for telecom applications. It features low forward voltage drop, low leakage current and high surge capability. The diode is specially designed to provide the necessary protection for applications such as base station equipment and Radio Frequency (RF) power amplifiers. Its maximum repetitive peak reverse voltage is 600V and it can handle a maximum peak forward current of 3.0A.
In order for the RS1J-E3/61T to function properly, it must be properly installed and connected. It should be carefully installed according to the instructions included in the package. Before installation, it is important to make sure that the component is of the correct size and type for the application. The device should also be mounted onto a suitable heat sink in order to dissipate the heat generated by the component.
The working principle of the RS1J-E3/61T is based on a pn-junction diode. A pn-junction diode is a semiconductor diode formed by joining two pieces of semiconductor material, one piece an n-type, the other a p-type. When a positive voltage is applied to the diode’s anode, a narrow depletion region forms. This region blocks the majority of the current, allowing only a small portion of it to pass through the component, giving it a rectifying effect.
The RS1J-E3/61T is a very effective component for telecom applications. Its low forward voltage drop and high surge capability provide a reliable solution for base station equipment and other sensitive telecom devices. Its pn-junction diode structure provides excellent rectifying performance while its compact design makes it economical and easy to install. The RS1J-E3/61T, therefore, is the perfect choice for telecom applications.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
RS1JB-13-F | Diodes Incor... | -- | 9000 | DIODE GEN PURP 600V 1A SM... |
RS1JHE3_A/H | Vishay Semic... | 0.08 $ | 1000 | DIODE GEN PURP 600V 1A DO... |
RS1JLW RVG | Taiwan Semic... | 0.04 $ | 3000 | DIODE GEN PURP 600V 1A SO... |
RS1J R3G | Taiwan Semic... | 0.04 $ | 10800 | DIODE GEN PURP 600V 1A DO... |
RS1JLS RVG | Taiwan Semic... | 0.04 $ | 3000 | DIODE GEN PURP 600V 1.2A ... |
RS1JL R3G | Taiwan Semic... | 0.05 $ | 7200 | DIODE GEN PURP 600V 800MA... |
RS1JLSHRVG | Taiwan Semic... | 0.05 $ | 6000 | DIODE GEN PURP 600V 1.2A ... |
RS1JLWHRVG | Taiwan Semic... | 0.05 $ | 6000 | DIODE GEN PURP 600V 1A SO... |
RS1JHE3_A/I | Vishay Semic... | -- | 1000 | DIODE GEN PURP 600V 1A DO... |
RS1J-E3/5AT | Vishay Semic... | -- | 1000 | DIODE GEN PURP 600V 1A DO... |
RS1J | ON Semicondu... | -- | 45000 | DIODE GEN PURP 600V 1A SM... |
RS1J-13-F | Diodes Incor... | -- | 40000 | DIODE GEN PURP 600V 1A SM... |
RS1JL RVG | Taiwan Semic... | 0.04 $ | 1000 | DIODE GEN PURP 600V 800MA... |
RS1JFA | ON Semicondu... | 0.06 $ | 1000 | DIODE GP 600V 800MA SOD12... |
RS1JDFQ-13 | Diodes Incor... | 0.06 $ | 1000 | DIODE GEN PURP 600V 1A DF... |
RS1J-E3/61T | Vishay Semic... | -- | 34200 | DIODE GEN PURP 600V 1A DO... |
RS1JTR | SMC Diode So... | 0.01 $ | 1000 | DIODE GEN PURP 600V 1A SM... |
RS1J M2G | Taiwan Semic... | 0.04 $ | 1000 | DIODE GEN PURP 600V 1A DO... |
RS1JHM2G | Taiwan Semic... | 0.04 $ | 1000 | DIODE GEN PURP 600V 1A DO... |
RS1JL RHG | Taiwan Semic... | 0.03 $ | 1000 | DIODE GEN PURP 600V 800MA... |
RS1JL M2G | Taiwan Semic... | 0.03 $ | 1000 | DIODE GEN PURP 600V 800MA... |
RS1JL MHG | Taiwan Semic... | 0.03 $ | 1000 | DIODE GEN PURP 600V 800MA... |
RS1JL MQG | Taiwan Semic... | 0.03 $ | 1000 | DIODE GEN PURP 600V 800MA... |
RS1JL MTG | Taiwan Semic... | 0.03 $ | 1000 | DIODE GEN PURP 600V 800MA... |
RS1JL RQG | Taiwan Semic... | 0.04 $ | 1000 | DIODE GEN PURP 600V 800MA... |
RS1JL RTG | Taiwan Semic... | 0.03 $ | 1000 | DIODE GEN PURP 600V 800MA... |
RS1JLHRHG | Taiwan Semic... | 0.04 $ | 1000 | DIODE GEN PURP 600V 800MA... |
RS1JLHM2G | Taiwan Semic... | 0.04 $ | 1000 | DIODE GEN PURP 600V 800MA... |
RS1JLHMHG | Taiwan Semic... | 0.04 $ | 1000 | DIODE GEN PURP 600V 800MA... |
RS1JLHMQG | Taiwan Semic... | 0.04 $ | 1000 | DIODE GEN PURP 600V 800MA... |
RS1JLHMTG | Taiwan Semic... | 0.04 $ | 1000 | DIODE GEN PURP 600V 800MA... |
RS1JLHRQG | Taiwan Semic... | 0.04 $ | 1000 | DIODE GEN PURP 600V 800MA... |
RS1JLHRTG | Taiwan Semic... | 0.04 $ | 1000 | DIODE GEN PURP 600V 800MA... |
RS1JHR3G | Taiwan Semic... | 0.04 $ | 1000 | DIODE GEN PURP 600V 1A DO... |
RS1JL RFG | Taiwan Semic... | 0.04 $ | 1000 | DIODE GEN PURP 600V 800MA... |
RS1JL RUG | Taiwan Semic... | 0.04 $ | 1000 | DIODE GEN PURP 600V 800MA... |
RS1J-M3/5AT | Vishay Semic... | 0.04 $ | 1000 | DIODE GEN PURP 600V 1A DO... |
RS1J-M3/61T | Vishay Semic... | 0.04 $ | 1000 | DIODE GEN PURP 600V 1A DO... |
RS1JLHR3G | Taiwan Semic... | 0.04 $ | 1000 | DIODE GEN PURP 600V 800MA... |
RS1JLHRFG | Taiwan Semic... | 0.04 $ | 1000 | DIODE GEN PURP 600V 800MA... |
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