RS1J-E3/5AT Discrete Semiconductor Products |
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Allicdata Part #: | RS1J-E3/5ATGITR-ND |
Manufacturer Part#: |
RS1J-E3/5AT |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Semiconductor Diodes Division |
Short Description: | DIODE GEN PURP 600V 1A DO214AC |
More Detail: | Diode Standard 600V 1A Surface Mount DO-214AC (SMA... |
DataSheet: | RS1J-E3/5AT Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 600V |
Current - Average Rectified (Io): | 1A |
Voltage - Forward (Vf) (Max) @ If: | 1.3V @ 1A |
Speed: | Fast Recovery = 200mA (Io) |
Reverse Recovery Time (trr): | 250ns |
Current - Reverse Leakage @ Vr: | 5µA @ 600V |
Capacitance @ Vr, F: | 7pF @ 4V, 1MHz |
Mounting Type: | Surface Mount |
Package / Case: | DO-214AC, SMA |
Supplier Device Package: | DO-214AC (SMA) |
Operating Temperature - Junction: | -55°C ~ 150°C |
Base Part Number: | RS1J |
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RS1J-E3/5AT is a single-phase silicon rectifier diode most commonly used in power supplies, voltage regulation, and switching power supplies. It can provide up to 3.5A continuous forward current while blocking reverse voltage up to 5kV. This diode is also used in high-power automation systems, such as robots and industrial drive systems.
A rectifier diode is a two-terminal electronic component that only allows the flow of current in one direction, and often takes the form of a semiconductor junction. It is usually placed in series connection with an AC power source so that only one side of the output waveform is "rectified" and the reverse current is blocked. The device can also be used to block reverse voltage, for example in power supplies or motor control circuits.
RS1J-E3/5AT is an ideal diode for rectifying power in many applications. It has a fast response time and low forward voltage, making it well-suited for high frequency switching applications. This diode can handle up to 5kV of reverse voltage, and offers up to 3.5A of continuous forward current. It offers high thermal stability with built-in temperature compensation, allowing the device to perform consistently in extreme conditions.
The working principle of the RS1J-E3/5AT is based on electrical diode theory. When a positive voltage is applied to the anode and a negative voltage is applied to the cathode, it creates a depletion region between them which blocks current flow in reverse direction. In the forward direction, the diode behaves like a resistor and drops the voltage by a certain amount which depends on the type of device.
This voltage drop creates a voltage difference between the anode and the cathode, creating an electric field that allows the current to flow through. The electric field will also create a depletion region in the reverse direction, effectively blocking the flow of current. RS1J-E3/5AT is designed with a gate control, which adjusts the width of the depletion region, allowing more control over the flow of current.
The RS1J-E3/5AT is an ideal choice for high power applications that need fast rectification and reverse voltage blocking. Its low forward voltage, high current carrying capacity, and temperature compensating features make it a reliable workhorse in a wide range of systems. Thanks to its ability to handle a wide range of voltage and current, this diode is a popular choice for power supplies, voltage regulation, and other power management systems.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
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RS1JB-13-F | Diodes Incor... | -- | 9000 | DIODE GEN PURP 600V 1A SM... |
RS1JHE3_A/H | Vishay Semic... | 0.08 $ | 1000 | DIODE GEN PURP 600V 1A DO... |
RS1JLW RVG | Taiwan Semic... | 0.04 $ | 3000 | DIODE GEN PURP 600V 1A SO... |
RS1J R3G | Taiwan Semic... | 0.04 $ | 10800 | DIODE GEN PURP 600V 1A DO... |
RS1JLS RVG | Taiwan Semic... | 0.04 $ | 3000 | DIODE GEN PURP 600V 1.2A ... |
RS1JL R3G | Taiwan Semic... | 0.05 $ | 7200 | DIODE GEN PURP 600V 800MA... |
RS1JLSHRVG | Taiwan Semic... | 0.05 $ | 6000 | DIODE GEN PURP 600V 1.2A ... |
RS1JLWHRVG | Taiwan Semic... | 0.05 $ | 6000 | DIODE GEN PURP 600V 1A SO... |
RS1JHE3_A/I | Vishay Semic... | -- | 1000 | DIODE GEN PURP 600V 1A DO... |
RS1J-E3/5AT | Vishay Semic... | -- | 1000 | DIODE GEN PURP 600V 1A DO... |
RS1J | ON Semicondu... | -- | 45000 | DIODE GEN PURP 600V 1A SM... |
RS1J-13-F | Diodes Incor... | -- | 40000 | DIODE GEN PURP 600V 1A SM... |
RS1JL RVG | Taiwan Semic... | 0.04 $ | 1000 | DIODE GEN PURP 600V 800MA... |
RS1JFA | ON Semicondu... | 0.06 $ | 1000 | DIODE GP 600V 800MA SOD12... |
RS1JDFQ-13 | Diodes Incor... | 0.06 $ | 1000 | DIODE GEN PURP 600V 1A DF... |
RS1J-E3/61T | Vishay Semic... | -- | 34200 | DIODE GEN PURP 600V 1A DO... |
RS1JTR | SMC Diode So... | 0.01 $ | 1000 | DIODE GEN PURP 600V 1A SM... |
RS1J M2G | Taiwan Semic... | 0.04 $ | 1000 | DIODE GEN PURP 600V 1A DO... |
RS1JHM2G | Taiwan Semic... | 0.04 $ | 1000 | DIODE GEN PURP 600V 1A DO... |
RS1JL RHG | Taiwan Semic... | 0.03 $ | 1000 | DIODE GEN PURP 600V 800MA... |
RS1JL M2G | Taiwan Semic... | 0.03 $ | 1000 | DIODE GEN PURP 600V 800MA... |
RS1JL MHG | Taiwan Semic... | 0.03 $ | 1000 | DIODE GEN PURP 600V 800MA... |
RS1JL MQG | Taiwan Semic... | 0.03 $ | 1000 | DIODE GEN PURP 600V 800MA... |
RS1JL MTG | Taiwan Semic... | 0.03 $ | 1000 | DIODE GEN PURP 600V 800MA... |
RS1JL RQG | Taiwan Semic... | 0.04 $ | 1000 | DIODE GEN PURP 600V 800MA... |
RS1JL RTG | Taiwan Semic... | 0.03 $ | 1000 | DIODE GEN PURP 600V 800MA... |
RS1JLHRHG | Taiwan Semic... | 0.04 $ | 1000 | DIODE GEN PURP 600V 800MA... |
RS1JLHM2G | Taiwan Semic... | 0.04 $ | 1000 | DIODE GEN PURP 600V 800MA... |
RS1JLHMHG | Taiwan Semic... | 0.04 $ | 1000 | DIODE GEN PURP 600V 800MA... |
RS1JLHMQG | Taiwan Semic... | 0.04 $ | 1000 | DIODE GEN PURP 600V 800MA... |
RS1JLHMTG | Taiwan Semic... | 0.04 $ | 1000 | DIODE GEN PURP 600V 800MA... |
RS1JLHRQG | Taiwan Semic... | 0.04 $ | 1000 | DIODE GEN PURP 600V 800MA... |
RS1JLHRTG | Taiwan Semic... | 0.04 $ | 1000 | DIODE GEN PURP 600V 800MA... |
RS1JHR3G | Taiwan Semic... | 0.04 $ | 1000 | DIODE GEN PURP 600V 1A DO... |
RS1JL RFG | Taiwan Semic... | 0.04 $ | 1000 | DIODE GEN PURP 600V 800MA... |
RS1JL RUG | Taiwan Semic... | 0.04 $ | 1000 | DIODE GEN PURP 600V 800MA... |
RS1J-M3/5AT | Vishay Semic... | 0.04 $ | 1000 | DIODE GEN PURP 600V 1A DO... |
RS1J-M3/61T | Vishay Semic... | 0.04 $ | 1000 | DIODE GEN PURP 600V 1A DO... |
RS1JLHR3G | Taiwan Semic... | 0.04 $ | 1000 | DIODE GEN PURP 600V 800MA... |
RS1JLHRFG | Taiwan Semic... | 0.04 $ | 1000 | DIODE GEN PURP 600V 800MA... |
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