Allicdata Part #: | RS1JHR3G-ND |
Manufacturer Part#: |
RS1JHR3G |
Price: | $ 0.04 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Taiwan Semiconductor Corporation |
Short Description: | DIODE GEN PURP 600V 1A DO214AC |
More Detail: | Diode Standard 600V 1A Surface Mount DO-214AC (SMA... |
DataSheet: | RS1JHR3G Datasheet/PDF |
Quantity: | 1000 |
9000 +: | $ 0.03572 |
Voltage - DC Reverse (Vr) (Max): | 600V |
Current - Average Rectified (Io): | 1A |
Voltage - Forward (Vf) (Max) @ If: | 1.3V @ 1A |
Speed: | Fast Recovery = 200mA (Io) |
Reverse Recovery Time (trr): | 250ns |
Current - Reverse Leakage @ Vr: | 5µA @ 600V |
Capacitance @ Vr, F: | 10pF @ 4V, 1MHz |
Mounting Type: | Surface Mount |
Package / Case: | DO-214AC, SMA |
Supplier Device Package: | DO-214AC (SMA) |
Operating Temperature - Junction: | -55°C ~ 150°C |
Series: | Automotive, AEC-Q101 |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Standard |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The RS1JHR3G is a single-phase Capacitor Commutated Thyristor (CCT) that is designed for use in applications such as motor control, mobile device charger, and uninterruptible power supply (UPS). It is capable of blocking high currents and allowing accuracy control of electronic devices. With an industry-leading 5mA trigger current, the RS1JHR3G provides superior performance over other single-phase thyristors, making it an ideal choice for high-performance, high-efficiency applications.
The RS1JHR3G is a self-commutating device that can be used to connect and disconnect elements of an electronic circuit. Its structure consists of two semiconductor layers, a P-type, and N-type, between which are two highly conductive contacts: a cathode and anode. When an external voltage is applied, the anode of the device becomes positive, forcing electrons to flow through the device and creating a current path between the P and N regions.
This current flow through the device causes a voltage drop across the P and N layers, resulting in a “gate-controlled” flow effect, where the magnitude of the current flow is limited by the resistance of the P and N layers. This current limit ensures that the RS1JHR3G will not be damaged by an over-current or “over-voltaging” that could occur if the current was permitted to spread unchecked. The aspect of gate-controlled operation also allows the RS1JHR3G to be used in high-precision applications wherein voltage drops need to be controlled accurately.
The RS1JHR3G is designed for use in applications such as motor control, where it can be used to rapidly open and close the circuit to allow alternating current (AC) to flow during motor motion. It is also used in mobile device chargers to ensure that the battery is being charged at the correct rate and voltage. Additionally, the RS1JHR3G can be used in uninterruptible power supplies (UPS) to provide a highly reliable source of power and voltage regulation.
In summary, the RS1JHR3G is a single-phase Capacitor Commutated Thyristor (CCT) that is designed for use in high-performance, high-efficiency applications and provides superior performance over other single-phase thyristors. Its gate-controlled operation allows for accurate voltage control and can be used in applications such as motor control, mobile device chargers, and uninterruptible power supplies.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
RS1JB-13-F | Diodes Incor... | -- | 9000 | DIODE GEN PURP 600V 1A SM... |
RS1JHE3_A/H | Vishay Semic... | 0.08 $ | 1000 | DIODE GEN PURP 600V 1A DO... |
RS1JLW RVG | Taiwan Semic... | 0.04 $ | 3000 | DIODE GEN PURP 600V 1A SO... |
RS1J R3G | Taiwan Semic... | 0.04 $ | 10800 | DIODE GEN PURP 600V 1A DO... |
RS1JLS RVG | Taiwan Semic... | 0.04 $ | 3000 | DIODE GEN PURP 600V 1.2A ... |
RS1JL R3G | Taiwan Semic... | 0.05 $ | 7200 | DIODE GEN PURP 600V 800MA... |
RS1JLSHRVG | Taiwan Semic... | 0.05 $ | 6000 | DIODE GEN PURP 600V 1.2A ... |
RS1JLWHRVG | Taiwan Semic... | 0.05 $ | 6000 | DIODE GEN PURP 600V 1A SO... |
RS1JHE3_A/I | Vishay Semic... | -- | 1000 | DIODE GEN PURP 600V 1A DO... |
RS1J-E3/5AT | Vishay Semic... | -- | 1000 | DIODE GEN PURP 600V 1A DO... |
RS1J | ON Semicondu... | -- | 45000 | DIODE GEN PURP 600V 1A SM... |
RS1J-13-F | Diodes Incor... | -- | 40000 | DIODE GEN PURP 600V 1A SM... |
RS1JL RVG | Taiwan Semic... | 0.04 $ | 1000 | DIODE GEN PURP 600V 800MA... |
RS1JFA | ON Semicondu... | 0.06 $ | 1000 | DIODE GP 600V 800MA SOD12... |
RS1JDFQ-13 | Diodes Incor... | 0.06 $ | 1000 | DIODE GEN PURP 600V 1A DF... |
RS1J-E3/61T | Vishay Semic... | -- | 34200 | DIODE GEN PURP 600V 1A DO... |
RS1JTR | SMC Diode So... | 0.01 $ | 1000 | DIODE GEN PURP 600V 1A SM... |
RS1J M2G | Taiwan Semic... | 0.04 $ | 1000 | DIODE GEN PURP 600V 1A DO... |
RS1JHM2G | Taiwan Semic... | 0.04 $ | 1000 | DIODE GEN PURP 600V 1A DO... |
RS1JL RHG | Taiwan Semic... | 0.03 $ | 1000 | DIODE GEN PURP 600V 800MA... |
RS1JL M2G | Taiwan Semic... | 0.03 $ | 1000 | DIODE GEN PURP 600V 800MA... |
RS1JL MHG | Taiwan Semic... | 0.03 $ | 1000 | DIODE GEN PURP 600V 800MA... |
RS1JL MQG | Taiwan Semic... | 0.03 $ | 1000 | DIODE GEN PURP 600V 800MA... |
RS1JL MTG | Taiwan Semic... | 0.03 $ | 1000 | DIODE GEN PURP 600V 800MA... |
RS1JL RQG | Taiwan Semic... | 0.04 $ | 1000 | DIODE GEN PURP 600V 800MA... |
RS1JL RTG | Taiwan Semic... | 0.03 $ | 1000 | DIODE GEN PURP 600V 800MA... |
RS1JLHRHG | Taiwan Semic... | 0.04 $ | 1000 | DIODE GEN PURP 600V 800MA... |
RS1JLHM2G | Taiwan Semic... | 0.04 $ | 1000 | DIODE GEN PURP 600V 800MA... |
RS1JLHMHG | Taiwan Semic... | 0.04 $ | 1000 | DIODE GEN PURP 600V 800MA... |
RS1JLHMQG | Taiwan Semic... | 0.04 $ | 1000 | DIODE GEN PURP 600V 800MA... |
RS1JLHMTG | Taiwan Semic... | 0.04 $ | 1000 | DIODE GEN PURP 600V 800MA... |
RS1JLHRQG | Taiwan Semic... | 0.04 $ | 1000 | DIODE GEN PURP 600V 800MA... |
RS1JLHRTG | Taiwan Semic... | 0.04 $ | 1000 | DIODE GEN PURP 600V 800MA... |
RS1JHR3G | Taiwan Semic... | 0.04 $ | 1000 | DIODE GEN PURP 600V 1A DO... |
RS1JL RFG | Taiwan Semic... | 0.04 $ | 1000 | DIODE GEN PURP 600V 800MA... |
RS1JL RUG | Taiwan Semic... | 0.04 $ | 1000 | DIODE GEN PURP 600V 800MA... |
RS1J-M3/5AT | Vishay Semic... | 0.04 $ | 1000 | DIODE GEN PURP 600V 1A DO... |
RS1J-M3/61T | Vishay Semic... | 0.04 $ | 1000 | DIODE GEN PURP 600V 1A DO... |
RS1JLHR3G | Taiwan Semic... | 0.04 $ | 1000 | DIODE GEN PURP 600V 800MA... |
RS1JLHRFG | Taiwan Semic... | 0.04 $ | 1000 | DIODE GEN PURP 600V 800MA... |
Diodes - General Purpose, Power, Switchi...
DIODE SCHOTTKY 40V 500MA SC76Diode Schot...
DIODE GEN PURPOSE DO-204ALDiode
DIODE GEN PURP 400V 1A DO41Diode Standar...
DIODE SCHOTTKY 20V 1A DIE 1=400Diode Sch...
DIODE GEN PURP 400V 500MA D5ADiode Stand...