RS1JHR3G Allicdata Electronics
Allicdata Part #:

RS1JHR3G-ND

Manufacturer Part#:

RS1JHR3G

Price: $ 0.04
Product Category:

Discrete Semiconductor Products

Manufacturer: Taiwan Semiconductor Corporation
Short Description: DIODE GEN PURP 600V 1A DO214AC
More Detail: Diode Standard 600V 1A Surface Mount DO-214AC (SMA...
DataSheet: RS1JHR3G datasheetRS1JHR3G Datasheet/PDF
Quantity: 1000
9000 +: $ 0.03572
Stock 1000Can Ship Immediately
$ 0.04
Specifications
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
Speed: Fast Recovery = 200mA (Io)
Reverse Recovery Time (trr): 250ns
Current - Reverse Leakage @ Vr: 5µA @ 600V
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Series: Automotive, AEC-Q101
Packaging: Tape & Reel (TR) 
Part Status: Active
Diode Type: Standard
Description

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Diodes - Rectifiers - Single

The RS1JHR3G is a single-phase Capacitor Commutated Thyristor (CCT) that is designed for use in applications such as motor control, mobile device charger, and uninterruptible power supply (UPS). It is capable of blocking high currents and allowing accuracy control of electronic devices. With an industry-leading 5mA trigger current, the RS1JHR3G provides superior performance over other single-phase thyristors, making it an ideal choice for high-performance, high-efficiency applications.

The RS1JHR3G is a self-commutating device that can be used to connect and disconnect elements of an electronic circuit. Its structure consists of two semiconductor layers, a P-type, and N-type, between which are two highly conductive contacts: a cathode and anode. When an external voltage is applied, the anode of the device becomes positive, forcing electrons to flow through the device and creating a current path between the P and N regions.

This current flow through the device causes a voltage drop across the P and N layers, resulting in a “gate-controlled” flow effect, where the magnitude of the current flow is limited by the resistance of the P and N layers. This current limit ensures that the RS1JHR3G will not be damaged by an over-current or “over-voltaging” that could occur if the current was permitted to spread unchecked. The aspect of gate-controlled operation also allows the RS1JHR3G to be used in high-precision applications wherein voltage drops need to be controlled accurately.

The RS1JHR3G is designed for use in applications such as motor control, where it can be used to rapidly open and close the circuit to allow alternating current (AC) to flow during motor motion. It is also used in mobile device chargers to ensure that the battery is being charged at the correct rate and voltage. Additionally, the RS1JHR3G can be used in uninterruptible power supplies (UPS) to provide a highly reliable source of power and voltage regulation.

In summary, the RS1JHR3G is a single-phase Capacitor Commutated Thyristor (CCT) that is designed for use in high-performance, high-efficiency applications and provides superior performance over other single-phase thyristors. Its gate-controlled operation allows for accurate voltage control and can be used in applications such as motor control, mobile device chargers, and uninterruptible power supplies.

The specific data is subject to PDF, and the above content is for reference

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