Allicdata Part #: | RS1JLHRTG-ND |
Manufacturer Part#: |
RS1JLHRTG |
Price: | $ 0.04 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Taiwan Semiconductor Corporation |
Short Description: | DIODE GEN PURP 600V 800MA SUBSMA |
More Detail: | Diode Standard 600V 800mA Surface Mount Sub SMA |
DataSheet: | RS1JLHRTG Datasheet/PDF |
Quantity: | 1000 |
22500 +: | $ 0.03093 |
Specifications
Series: | Automotive, AEC-Q101 |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 600V |
Current - Average Rectified (Io): | 800mA |
Voltage - Forward (Vf) (Max) @ If: | 1.3V @ 800mA |
Speed: | Fast Recovery = 200mA (Io) |
Reverse Recovery Time (trr): | 250ns |
Current - Reverse Leakage @ Vr: | 5µA @ 600V |
Capacitance @ Vr, F: | 10pF @ 4V, 1MHz |
Mounting Type: | Surface Mount |
Package / Case: | DO-219AB |
Supplier Device Package: | Sub SMA |
Operating Temperature - Junction: | -55°C ~ 150°C |
Description
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Introduction
RS1JLHRTG is a two-terminal, unidirectional device. It is commonly used in applications where power management and device protection are critical to a successful design. The device is a single diode that consists of a rectifier and a junction-gate field-effect transistor (JFET).Application Field
The RS1JLHRTG is commonly used in power applications, such as portable and automotive devices, as well as other electronic systems. The device helps in a variety of power management and protection tasks, such as preventing reverse currents and bidirectional power flows, controlling in-rush currents, and providing surge protection. The device is also suitable for a number of communication and data acquisition systems because it is electrically isolated and features low leakage current. The device is specifically designed for applications in which the gate voltage has to drive a high or low voltage (e.g. high reflected energy limiting circuits). The device can also be used in combination with a safety ground switch, which provides an extra level of safety in high power applications.Working Principle
At the heart of the RS1JLHRTG lies an n-channel JFET and a PN rectifier. The JFET gate acts as an open-circuit voltage source and behaves like a normally on switch. When the gate receives a positive signal and the source is negative, the JFET is turned on, allowing current flow from the drain to the source. The rectifier, on the other hand, prevents current from flowing from the source to the drain. Together, the JFET and rectifier form the RS1JLHRTG, which acts as a single-diode with all the features of a PN junction. The device features a low on-resistance, high-voltage blocking, and fast switching times. The RS1JLHRTG also offers excellent electrostatic discharge (ESD) protection and fail-safe thermal shutdown.Conclusion
The RS1JLHRTG is a versatile single device that provides superior power management and protection in a variety of electronic systems. The device is suitable for a variety of applications, such as portable and automotive systems, and its fast switching time, low on-resistance, high-voltage blocking, and ESD protection make it a valuable addition to any design. The device also offers additional safety with its fail-safe thermal shutdown feature.The specific data is subject to PDF, and the above content is for reference
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