RS1JLHRTG Allicdata Electronics
Allicdata Part #:

RS1JLHRTG-ND

Manufacturer Part#:

RS1JLHRTG

Price: $ 0.04
Product Category:

Discrete Semiconductor Products

Manufacturer: Taiwan Semiconductor Corporation
Short Description: DIODE GEN PURP 600V 800MA SUBSMA
More Detail: Diode Standard 600V 800mA Surface Mount Sub SMA
DataSheet: RS1JLHRTG datasheetRS1JLHRTG Datasheet/PDF
Quantity: 1000
22500 +: $ 0.03093
Stock 1000Can Ship Immediately
$ 0.04
Specifications
Series: Automotive, AEC-Q101
Packaging: Tape & Reel (TR) 
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 800mA
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 800mA
Speed: Fast Recovery = 200mA (Io)
Reverse Recovery Time (trr): 250ns
Current - Reverse Leakage @ Vr: 5µA @ 600V
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-219AB
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

Introduction

RS1JLHRTG is a two-terminal, unidirectional device. It is commonly used in applications where power management and device protection are critical to a successful design. The device is a single diode that consists of a rectifier and a junction-gate field-effect transistor (JFET).

Application Field

The RS1JLHRTG is commonly used in power applications, such as portable and automotive devices, as well as other electronic systems. The device helps in a variety of power management and protection tasks, such as preventing reverse currents and bidirectional power flows, controlling in-rush currents, and providing surge protection. The device is also suitable for a number of communication and data acquisition systems because it is electrically isolated and features low leakage current. The device is specifically designed for applications in which the gate voltage has to drive a high or low voltage (e.g. high reflected energy limiting circuits). The device can also be used in combination with a safety ground switch, which provides an extra level of safety in high power applications.

Working Principle

At the heart of the RS1JLHRTG lies an n-channel JFET and a PN rectifier. The JFET gate acts as an open-circuit voltage source and behaves like a normally on switch. When the gate receives a positive signal and the source is negative, the JFET is turned on, allowing current flow from the drain to the source. The rectifier, on the other hand, prevents current from flowing from the source to the drain. Together, the JFET and rectifier form the RS1JLHRTG, which acts as a single-diode with all the features of a PN junction. The device features a low on-resistance, high-voltage blocking, and fast switching times. The RS1JLHRTG also offers excellent electrostatic discharge (ESD) protection and fail-safe thermal shutdown.

Conclusion

The RS1JLHRTG is a versatile single device that provides superior power management and protection in a variety of electronic systems. The device is suitable for a variety of applications, such as portable and automotive systems, and its fast switching time, low on-resistance, high-voltage blocking, and ESD protection make it a valuable addition to any design. The device also offers additional safety with its fail-safe thermal shutdown feature.

The specific data is subject to PDF, and the above content is for reference

Related Products
Search Part number : "RS1J" Included word is 40
Part Number Manufacturer Price Quantity Description
RS1JB-13-F Diodes Incor... -- 9000 DIODE GEN PURP 600V 1A SM...
RS1JHE3_A/H Vishay Semic... 0.08 $ 1000 DIODE GEN PURP 600V 1A DO...
RS1JLW RVG Taiwan Semic... 0.04 $ 3000 DIODE GEN PURP 600V 1A SO...
RS1J R3G Taiwan Semic... 0.04 $ 10800 DIODE GEN PURP 600V 1A DO...
RS1JLS RVG Taiwan Semic... 0.04 $ 3000 DIODE GEN PURP 600V 1.2A ...
RS1JL R3G Taiwan Semic... 0.05 $ 7200 DIODE GEN PURP 600V 800MA...
RS1JLSHRVG Taiwan Semic... 0.05 $ 6000 DIODE GEN PURP 600V 1.2A ...
RS1JLWHRVG Taiwan Semic... 0.05 $ 6000 DIODE GEN PURP 600V 1A SO...
RS1JHE3_A/I Vishay Semic... -- 1000 DIODE GEN PURP 600V 1A DO...
RS1J-E3/5AT Vishay Semic... -- 1000 DIODE GEN PURP 600V 1A DO...
RS1J ON Semicondu... -- 45000 DIODE GEN PURP 600V 1A SM...
RS1J-13-F Diodes Incor... -- 40000 DIODE GEN PURP 600V 1A SM...
RS1JL RVG Taiwan Semic... 0.04 $ 1000 DIODE GEN PURP 600V 800MA...
RS1JFA ON Semicondu... 0.06 $ 1000 DIODE GP 600V 800MA SOD12...
RS1JDFQ-13 Diodes Incor... 0.06 $ 1000 DIODE GEN PURP 600V 1A DF...
RS1J-E3/61T Vishay Semic... -- 34200 DIODE GEN PURP 600V 1A DO...
RS1JTR SMC Diode So... 0.01 $ 1000 DIODE GEN PURP 600V 1A SM...
RS1J M2G Taiwan Semic... 0.04 $ 1000 DIODE GEN PURP 600V 1A DO...
RS1JHM2G Taiwan Semic... 0.04 $ 1000 DIODE GEN PURP 600V 1A DO...
RS1JL RHG Taiwan Semic... 0.03 $ 1000 DIODE GEN PURP 600V 800MA...
RS1JL M2G Taiwan Semic... 0.03 $ 1000 DIODE GEN PURP 600V 800MA...
RS1JL MHG Taiwan Semic... 0.03 $ 1000 DIODE GEN PURP 600V 800MA...
RS1JL MQG Taiwan Semic... 0.03 $ 1000 DIODE GEN PURP 600V 800MA...
RS1JL MTG Taiwan Semic... 0.03 $ 1000 DIODE GEN PURP 600V 800MA...
RS1JL RQG Taiwan Semic... 0.04 $ 1000 DIODE GEN PURP 600V 800MA...
RS1JL RTG Taiwan Semic... 0.03 $ 1000 DIODE GEN PURP 600V 800MA...
RS1JLHRHG Taiwan Semic... 0.04 $ 1000 DIODE GEN PURP 600V 800MA...
RS1JLHM2G Taiwan Semic... 0.04 $ 1000 DIODE GEN PURP 600V 800MA...
RS1JLHMHG Taiwan Semic... 0.04 $ 1000 DIODE GEN PURP 600V 800MA...
RS1JLHMQG Taiwan Semic... 0.04 $ 1000 DIODE GEN PURP 600V 800MA...
RS1JLHMTG Taiwan Semic... 0.04 $ 1000 DIODE GEN PURP 600V 800MA...
RS1JLHRQG Taiwan Semic... 0.04 $ 1000 DIODE GEN PURP 600V 800MA...
RS1JLHRTG Taiwan Semic... 0.04 $ 1000 DIODE GEN PURP 600V 800MA...
RS1JHR3G Taiwan Semic... 0.04 $ 1000 DIODE GEN PURP 600V 1A DO...
RS1JL RFG Taiwan Semic... 0.04 $ 1000 DIODE GEN PURP 600V 800MA...
RS1JL RUG Taiwan Semic... 0.04 $ 1000 DIODE GEN PURP 600V 800MA...
RS1J-M3/5AT Vishay Semic... 0.04 $ 1000 DIODE GEN PURP 600V 1A DO...
RS1J-M3/61T Vishay Semic... 0.04 $ 1000 DIODE GEN PURP 600V 1A DO...
RS1JLHR3G Taiwan Semic... 0.04 $ 1000 DIODE GEN PURP 600V 800MA...
RS1JLHRFG Taiwan Semic... 0.04 $ 1000 DIODE GEN PURP 600V 800MA...
Latest Products
IDW30E65D1

Diodes - General Purpose, Power, Switchi...

IDW30E65D1 Allicdata Electronics
PMEG4005AEA/M5X

DIODE SCHOTTKY 40V 500MA SC76Diode Schot...

PMEG4005AEA/M5X Allicdata Electronics
RGP10J-057M3/54

DIODE GEN PURPOSE DO-204ALDiode

RGP10J-057M3/54 Allicdata Electronics
1N4004-N-2-2-BP

DIODE GEN PURP 400V 1A DO41Diode Standar...

1N4004-N-2-2-BP Allicdata Electronics
CPD76X-1N5817-CT

DIODE SCHOTTKY 20V 1A DIE 1=400Diode Sch...

CPD76X-1N5817-CT Allicdata Electronics
JANTXV1N6662US

DIODE GEN PURP 400V 500MA D5ADiode Stand...

JANTXV1N6662US Allicdata Electronics