
Allicdata Part #: | RS1KFSMWGTR-ND |
Manufacturer Part#: |
RS1KFS MWG |
Price: | $ 0.05 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Taiwan Semiconductor Corporation |
Short Description: | DIODE |
More Detail: | Diode Standard 800V 1A Surface Mount SOD-128 |
DataSheet: | ![]() |
Quantity: | 7000 |
3500 +: | $ 0.04247 |
7000 +: | $ 0.03822 |
10500 +: | $ 0.03398 |
24500 +: | $ 0.03185 |
87500 +: | $ 0.02831 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 800V |
Current - Average Rectified (Io): | 1A |
Voltage - Forward (Vf) (Max) @ If: | 1.3V @ 1A |
Speed: | Fast Recovery = 200mA (Io) |
Reverse Recovery Time (trr): | 500ns |
Current - Reverse Leakage @ Vr: | 5µA @ 800V |
Capacitance @ Vr, F: | 7pF @ 4V, 1MHz |
Mounting Type: | Surface Mount |
Package / Case: | SOD-128 |
Supplier Device Package: | SOD-128 |
Operating Temperature - Junction: | -55°C ~ 150°C |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
A RS1KFS MWG (Metal-Walled Grid) is a single-diode type rectifier device that is specifically designed for use in high-voltage applications. This device is able to withstand a very large amount of power, up to 5 kilowatts, and its wide range of operating parameters makes it an ideal choice for various applications. The device is a modified Schottky diode with a nickel barrier and an optimized geometry that allows it to exhibit higher blocking voltages and improved reverse-recovery time than traditional rectifiers. This makes it ideal for applications such as high-speed switching and power conversion.
The RS1KFS PWG has a wide working parameter range, which makes it suitable for use in many different types of applications. The device’s typical operating voltage range is from 86-232V and its current capabilities range from 17A to 18A. It also has a nominal temperature range of -40°C to125°C, which makes it suitable for use in a variety of harsh environments. The device is also capable of handling large capacitive and inductive loads, up to 5 kilowatts.
The working principle of the device is very simple. The device utilizes the electron-hole recombination principle, which basically describes the behavior of the device when the voltage is applied. When a steadydc voltage is applied across the terminals, current begins to flow, which creates a depletion region that reduces the barrier to the free carrier flow. As a result, electron-hole pairs are created that flow through the barrier, due to their lower energy level, which increases the current flow through the device. This current continues to increase until the device reaches its rated maximum current observed.
The RS1KFS PWG is designed to be an industry-standard diode for high-voltage applications, with its robust construction and superior performance for use in power grid, electric vehicle, industrial automation, and lighting applications. Its wide operating parameter range and its ability to withstand large loads make it an ideal choice for a variety of applications.
The device is also designed to be extremely reliable, providing high-quality performance for countless hours of uninterrupted use. It is also designed to be highly efficient, reducing heat losses and power consumption, thus increasing the overall efficiency of the system. Additionally, the device is also equipped with overvoltage protection and a low forward voltage drop.
The RS1KFS MWG is a highly efficient rectifier device with an optimized geometry and high voltage capabilities. It is ideal for use in various applications that require high switching speeds and power conversion, such as high-speed switching or power grid applications. Its wide working parameter range and its ability to withstand large loads make it an attractive choice for a variety of applications.
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