RS1KFS MWG Allicdata Electronics
Allicdata Part #:

RS1KFSMWGTR-ND

Manufacturer Part#:

RS1KFS MWG

Price: $ 0.05
Product Category:

Discrete Semiconductor Products

Manufacturer: Taiwan Semiconductor Corporation
Short Description: DIODE
More Detail: Diode Standard 800V 1A Surface Mount SOD-128
DataSheet: RS1KFS MWG datasheetRS1KFS MWG Datasheet/PDF
Quantity: 7000
3500 +: $ 0.04247
7000 +: $ 0.03822
10500 +: $ 0.03398
24500 +: $ 0.03185
87500 +: $ 0.02831
Stock 7000Can Ship Immediately
$ 0.05
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 800V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
Speed: Fast Recovery = 200mA (Io)
Reverse Recovery Time (trr): 500ns
Current - Reverse Leakage @ Vr: 5µA @ 800V
Capacitance @ Vr, F: 7pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: SOD-128
Supplier Device Package: SOD-128
Operating Temperature - Junction: -55°C ~ 150°C
Description

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A RS1KFS MWG (Metal-Walled Grid) is a single-diode type rectifier device that is specifically designed for use in high-voltage applications. This device is able to withstand a very large amount of power, up to 5 kilowatts, and its wide range of operating parameters makes it an ideal choice for various applications. The device is a modified Schottky diode with a nickel barrier and an optimized geometry that allows it to exhibit higher blocking voltages and improved reverse-recovery time than traditional rectifiers. This makes it ideal for applications such as high-speed switching and power conversion.

The RS1KFS PWG has a wide working parameter range, which makes it suitable for use in many different types of applications. The device’s typical operating voltage range is from 86-232V and its current capabilities range from 17A to 18A. It also has a nominal temperature range of -40°C to125°C, which makes it suitable for use in a variety of harsh environments. The device is also capable of handling large capacitive and inductive loads, up to 5 kilowatts.

The working principle of the device is very simple. The device utilizes the electron-hole recombination principle, which basically describes the behavior of the device when the voltage is applied. When a steadydc voltage is applied across the terminals, current begins to flow, which creates a depletion region that reduces the barrier to the free carrier flow. As a result, electron-hole pairs are created that flow through the barrier, due to their lower energy level, which increases the current flow through the device. This current continues to increase until the device reaches its rated maximum current observed.

The RS1KFS PWG is designed to be an industry-standard diode for high-voltage applications, with its robust construction and superior performance for use in power grid, electric vehicle, industrial automation, and lighting applications. Its wide operating parameter range and its ability to withstand large loads make it an ideal choice for a variety of applications.

The device is also designed to be extremely reliable, providing high-quality performance for countless hours of uninterrupted use. It is also designed to be highly efficient, reducing heat losses and power consumption, thus increasing the overall efficiency of the system. Additionally, the device is also equipped with overvoltage protection and a low forward voltage drop.

The RS1KFS MWG is a highly efficient rectifier device with an optimized geometry and high voltage capabilities. It is ideal for use in various applications that require high switching speeds and power conversion, such as high-speed switching or power grid applications. Its wide working parameter range and its ability to withstand large loads make it an attractive choice for a variety of applications.

The specific data is subject to PDF, and the above content is for reference

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