
RS2G-13-F Discrete Semiconductor Products |
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Allicdata Part #: | RS2G-FDITR-ND |
Manufacturer Part#: |
RS2G-13-F |
Price: | $ 0.14 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | DIODE GEN PURP 400V 1.5A SMB |
More Detail: | Diode Standard 400V 1.5A Surface Mount SMB |
DataSheet: | ![]() |
Quantity: | 12000 |
3000 +: | $ 0.12353 |
6000 +: | $ 0.11556 |
15000 +: | $ 0.10759 |
30000 +: | $ 0.10201 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 400V |
Current - Average Rectified (Io): | 1.5A |
Voltage - Forward (Vf) (Max) @ If: | 1.3V @ 1.5A |
Speed: | Fast Recovery = 200mA (Io) |
Reverse Recovery Time (trr): | 150ns |
Current - Reverse Leakage @ Vr: | 5µA @ 400V |
Capacitance @ Vr, F: | 30pF @ 4V, 1MHz |
Mounting Type: | Surface Mount |
Package / Case: | DO-214AA, SMB |
Supplier Device Package: | SMB |
Operating Temperature - Junction: | -65°C ~ 150°C |
Base Part Number: | RS2G |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The RS2G-13-Fis a single rectifier diode designed for a variety of applications. The device is a small surface mount Schottky rectifier that is designed to work with a variety of high power applications including low power DC-DC converters, unidirectional DC-DC converters, and general rectification requirements.
The RS2G-13-F is constructed using silicon wafer technology and is housed in a small surface mount package. The device has low forward voltage drop, which helps to minimize power loss and heat generation. The device also has a low reverse voltage, which helps to reduce power dissipation during forward conduction. The device also has a high surge current rating, which helps to ensure that the device can handle large transient load currents without being damaged.
The RS2G-13-F is also designed to be resistant to temperature, moisture, and vibration. It has an operating temperature range that is suitable for both indoor and outdoor use. The device can also handle high levels of vibration which can be encountered in many industrial applications. The device is also immune to high levels of moisture and condensation.
The working principle of the RS2G-13-F is quite straightforward and consists of two main steps. The first step is called forward conduction and occurs when the device is connected in a circuit in a forward-biased condition. When connected in this way, the device will allow current to flow from the anode to the cathode. The device reduces resistance by allowing current to flow in addition to the reverse potential created by the bias.
The second step is called reverse conduction and occurs when the device is connected in a circuit in a reverse-biased condition. When connected in this way, the device will block any current flowing in the opposite direction, preventing power dissipation and protecting the circuit. The device reduces resistance in this mode by providing an ‘extra’ voltage drop as the current flows in the opposite direction.
The RS2G-13-F is ideal for a variety of applications including, but not limited to, automotive electronics, power supplies, motor control systems, and power management systems. The device can also be used for unidirectional DC-DC converters and general rectification requirements. It is also suitable for applications where vibration, temperature, and moisture resistance are all important considerations.
The RS2G-13-F is a versatile, high-frequency rectifier diode that is ideal for a variety of applications. The device has a low forward voltage drop, a low reverse voltage, and a high surge current rating making it ideal for many high power applications. The device is also resistant to high levels of vibration, temperature, and moisture making it suitable for many industrial applications. The device also works on a two-step principle, allowing current to flow in the forward-biased condition and blocking current from flowing in the reverse biased condition if required.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
RS2GHE3_A/I | Vishay Semic... | -- | 1000 | DIODE GEN PURP 400V 1.5A ... |
RS2GHE3_A/H | Vishay Semic... | -- | 1000 | DIODE GEN PURP 400V 1.5A ... |
RS2G-13 | Diodes Incor... | 0.0 $ | 1000 | DIODE GEN PURP 400V 1.5A ... |
RS2G R5G | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 400V 2A DO... |
RS2GA-13 | Diodes Incor... | 0.0 $ | 1000 | DIODE GEN PURP 400V 1.5A ... |
RS2G-E3/5BT | Vishay Semic... | 0.12 $ | 1000 | DIODE GEN PURP 400V 1.5A ... |
RS2G-M3/5BT | Vishay Semic... | 0.08 $ | 1000 | DIODE GEN PURP 400V 1.5A ... |
RS2GHE3/52T | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 400V 1.5A ... |
RS2GA R3G | Taiwan Semic... | 0.06 $ | 1800 | DIODE GEN PURP 400V 1.5A ... |
RS2G-E3/52T | Vishay Semic... | -- | 1000 | DIODE GEN PURP 400V 1.5A ... |
RS2GAHR3G | Taiwan Semic... | 0.08 $ | 5400 | DIODE GEN PURP 400V 1.5A ... |
RS2GAHM2G | Taiwan Semic... | 0.05 $ | 1000 | DIODE GEN PURP 400V 1.5A ... |
RS2GHE3/5BT | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 400V 1.5A ... |
RS2GA-13-F | Diodes Incor... | 0.13 $ | 5000 | DIODE GEN PURP 400V 1.5A ... |
RS2G/1 | Vishay Semic... | 0.13 $ | 1000 | DIODE GEN PURP 400V 1.5A ... |
RS2G M4G | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 400V 2A DO... |
RS2G-M3/52T | Vishay Semic... | 0.08 $ | 1000 | DIODE GEN PURP 50V 1.5A D... |
RS2G-13-F | Diodes Incor... | 0.14 $ | 12000 | DIODE GEN PURP 400V 1.5A ... |
RS2GA M2G | Taiwan Semic... | 0.05 $ | 1000 | DIODE GEN PURP 400V 1.5A ... |
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