RS2GHE3/5BT Allicdata Electronics
Allicdata Part #:

RS2GHE3/5BT-ND

Manufacturer Part#:

RS2GHE3/5BT

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Semiconductor Diodes Division
Short Description: DIODE GEN PURP 400V 1.5A DO214AA
More Detail: Diode Standard 400V 1.5A Surface Mount DO-214AA (S...
DataSheet: RS2GHE3/5BT datasheetRS2GHE3/5BT Datasheet/PDF
Quantity: 1000
0 +: $ 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Discontinued at Digi-Key
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 1.5A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1.5A
Speed: Fast Recovery = 200mA (Io)
Reverse Recovery Time (trr): 150ns
Current - Reverse Leakage @ Vr: 5µA @ 400V
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Base Part Number: RS2G
Description

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Introduction to RS2GHE3/5BT

The RS2GHE3/5BT is a single diode rectifier based on the metal-oxide-semiconductor field-effect transistor (MOSFET). It is widely used for power conversion applications, such as switching power supplies, servo motors, and digital power supplies. It is suitable for operating at high frequency and with low loss in its operation. This diode is part of the 2nd generation of Schottky power rectifiers.

Application Field and Working Principle of RS2GHE3/5BT

The RS2GHE3/5BT is suitable for use in several horizontal applications, such as automotive electronic circuits, LED lighting, solar energy systems, wind energy systems, low voltage switched power supplies, DC-DC converters, AC motor drives and server power supplies. Its low reverse leakage current, low saturation voltage and high frequency capability make it a reliable and economical diode. The working principle of the RS2GHE3/5BT is based on the Schottky barrier diode rectifier. It is an enhancement-mode MOSFET with a thin metal-oxide-semiconductor (MOS) layer which includes a thin gate oxide layer. When a forward voltage is applied to the gate, electrons are attracted to the MOS layer and a positive charge accumulates at the surface. This induces a current flow in the MOS layer which results in a voltage drop across the junction. This voltage drop is what causes the diode to rectify the current. In addition, the RS2GHE3/5BT has an integrated diode protection circuit which provides protection against voltage spikes and current overshoots. This protection circuit also prevents the diode from being damaged in the event of an external power surge.

Conclusion

The RS2GHE3/5BT is an efficient and economic single diode rectifier which is suitable for many power conversion applications. Its low saturation voltage, low reverse leakage current and its integrated protection circuit are just some of the features that make this diode an excellent choice for power conversion applications.

The specific data is subject to PDF, and the above content is for reference

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