
Allicdata Part #: | RS2GHE3/5BT-ND |
Manufacturer Part#: |
RS2GHE3/5BT |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Semiconductor Diodes Division |
Short Description: | DIODE GEN PURP 400V 1.5A DO214AA |
More Detail: | Diode Standard 400V 1.5A Surface Mount DO-214AA (S... |
DataSheet: | ![]() |
Quantity: | 1000 |
0 +: | $ 0.00000 |
Specifications
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Discontinued at Digi-Key |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 400V |
Current - Average Rectified (Io): | 1.5A |
Voltage - Forward (Vf) (Max) @ If: | 1.3V @ 1.5A |
Speed: | Fast Recovery = 200mA (Io) |
Reverse Recovery Time (trr): | 150ns |
Current - Reverse Leakage @ Vr: | 5µA @ 400V |
Capacitance @ Vr, F: | 20pF @ 4V, 1MHz |
Mounting Type: | Surface Mount |
Package / Case: | DO-214AA, SMB |
Supplier Device Package: | DO-214AA (SMB) |
Operating Temperature - Junction: | -55°C ~ 150°C |
Base Part Number: | RS2G |
Description
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Introduction to RS2GHE3/5BT
The RS2GHE3/5BT is a single diode rectifier based on the metal-oxide-semiconductor field-effect transistor (MOSFET). It is widely used for power conversion applications, such as switching power supplies, servo motors, and digital power supplies. It is suitable for operating at high frequency and with low loss in its operation. This diode is part of the 2nd generation of Schottky power rectifiers.Application Field and Working Principle of RS2GHE3/5BT
The RS2GHE3/5BT is suitable for use in several horizontal applications, such as automotive electronic circuits, LED lighting, solar energy systems, wind energy systems, low voltage switched power supplies, DC-DC converters, AC motor drives and server power supplies. Its low reverse leakage current, low saturation voltage and high frequency capability make it a reliable and economical diode. The working principle of the RS2GHE3/5BT is based on the Schottky barrier diode rectifier. It is an enhancement-mode MOSFET with a thin metal-oxide-semiconductor (MOS) layer which includes a thin gate oxide layer. When a forward voltage is applied to the gate, electrons are attracted to the MOS layer and a positive charge accumulates at the surface. This induces a current flow in the MOS layer which results in a voltage drop across the junction. This voltage drop is what causes the diode to rectify the current. In addition, the RS2GHE3/5BT has an integrated diode protection circuit which provides protection against voltage spikes and current overshoots. This protection circuit also prevents the diode from being damaged in the event of an external power surge.Conclusion
The RS2GHE3/5BT is an efficient and economic single diode rectifier which is suitable for many power conversion applications. Its low saturation voltage, low reverse leakage current and its integrated protection circuit are just some of the features that make this diode an excellent choice for power conversion applications.The specific data is subject to PDF, and the above content is for reference
Related Products
Search Part number : "RS2G" Included word is 19
Part Number | Manufacturer | Price | Quantity | Description |
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RS2GHE3_A/I | Vishay Semic... | -- | 1000 | DIODE GEN PURP 400V 1.5A ... |
RS2GHE3_A/H | Vishay Semic... | -- | 1000 | DIODE GEN PURP 400V 1.5A ... |
RS2G-13 | Diodes Incor... | 0.0 $ | 1000 | DIODE GEN PURP 400V 1.5A ... |
RS2G R5G | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 400V 2A DO... |
RS2GA-13 | Diodes Incor... | 0.0 $ | 1000 | DIODE GEN PURP 400V 1.5A ... |
RS2G-E3/5BT | Vishay Semic... | 0.12 $ | 1000 | DIODE GEN PURP 400V 1.5A ... |
RS2G-M3/5BT | Vishay Semic... | 0.08 $ | 1000 | DIODE GEN PURP 400V 1.5A ... |
RS2GHE3/52T | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 400V 1.5A ... |
RS2GA R3G | Taiwan Semic... | 0.06 $ | 1800 | DIODE GEN PURP 400V 1.5A ... |
RS2G-E3/52T | Vishay Semic... | -- | 1000 | DIODE GEN PURP 400V 1.5A ... |
RS2GAHR3G | Taiwan Semic... | 0.08 $ | 5400 | DIODE GEN PURP 400V 1.5A ... |
RS2GAHM2G | Taiwan Semic... | 0.05 $ | 1000 | DIODE GEN PURP 400V 1.5A ... |
RS2GHE3/5BT | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 400V 1.5A ... |
RS2GA-13-F | Diodes Incor... | 0.13 $ | 5000 | DIODE GEN PURP 400V 1.5A ... |
RS2G/1 | Vishay Semic... | 0.13 $ | 1000 | DIODE GEN PURP 400V 1.5A ... |
RS2G M4G | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 400V 2A DO... |
RS2G-M3/52T | Vishay Semic... | 0.08 $ | 1000 | DIODE GEN PURP 50V 1.5A D... |
RS2G-13-F | Diodes Incor... | 0.14 $ | 12000 | DIODE GEN PURP 400V 1.5A ... |
RS2GA M2G | Taiwan Semic... | 0.05 $ | 1000 | DIODE GEN PURP 400V 1.5A ... |
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