S2004DS1TP

Current - On State (It (RMS)) (Max):	4A
Supplier Device Package:	TO-252, (D-Pak)
Package / Case:	TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type:	Surface Mount
Operating Temperature:	-40°C ~ 110°C
SCR Type:	Sensitive Gate
Current - Non Rep. Surge 50, 60Hz (Itsm):	25A, 30A
Current - Off State (Max):	2µA
Current - Hold (Ih) (Max):	4mA
Series:	--
Current - On State (It (AV)) (Max):	2.5A
Voltage - On State (Vtm) (Max):	1.6V
Current - Gate Trigger (Igt) (Max):	50µA
Voltage - Gate Trigger (Vgt) (Max):	800mV
Voltage - Off State:	200V
Part Status:	Obsolete
Packaging:	Tube

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Thyristors - SCRs - S2004DS1TP Application Field and Working Principle

A S2004DS1TP thyristor is a four-layer diode commonly known as a silicon-controlled rectifier (SCR), a type of thyristor. It is very often used in a wide array of applications. To understand the operation of a S2004DS1TP, it is important to understand its application field, structure, current and voltage characteristics.

Application Field

The S2004DS1TP is mainly used in rectifying, inverting and chopping circuits, as well as AC switching, lighting control, and power control applications such as AC motor control. It is also used in DC switching and applying reverse voltage protection. In addition, it is also often used for AC/DC or DC/AC conversion.

Structure and Working Principle

A S2004DS1TP consists of four layers of silicon. The first layer is the anode, which is the positive side. The second layer is the gate, which is used to control the flow of current. The third layer is the cathode, which is the negative side. The fourth and last layer is the body, which acts as the base of the thyristor. The S2004DS1TP has two basic modes of operation. The first is referred to as the on-state, in which the device is in a conducting state. The second is referred to as the off-state, in which the device is in a non-conducting state. When in the on-state, a current flows from the anode to the cathode. The flow of current can be triggered by either an external gate current or by the voltage difference between the anode and the cathode. Once the current is triggered, the voltage drop between the anode and the cathode will become smaller, allowing for greater currents to flow. When in the off-state, the S2004DS1TP acts as a non-conducting device. This is because the voltage across the device is lower than the forward threshold voltage. In order to turn the S2004DS1TP back on, a larger voltage needs to be applied across the device.

Current and Voltage Characteristics

The S2004DS1TP can handle up to 1A of average current, with a peak of 2.3A. It has an on-state voltage drop of 1.2V and can sustain a voltage up to 600V. When in the off-state, the device needs an external gate current to be applied in order to turn it back on.

Conclusion

In conclusion, the S2004DS1TP is a four-layer silicon-controlled rectifier (SCR) which is mainly used for rectifying, inverting, chopping, or AC and DC switching applications. It has an on-state voltage drop of 1.2V and can sustain voltages up to 600V. The S2004DS1TP can also handle a peak of 2.3A of average current.

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