S2008VS3

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Thyristors - SCRs

A Silicon-Controlled Rectifier or SCR (also known as a thyristor) is a semiconductor device whose electrical characteristics offer unique performance capabilities unparalleled by other electronic components. The SCR is familiarly known as "the thyristor" derived from the Greek words for "gate" and "controlled switch". The SCRs are available in a wide range of shapes, sizes and voltage ratings.

An SCR is an electronic component designed to act as a switch (usually in a power control application) by responding to current or voltage signals. The device can be turned on by a signal and shut off simply by reducing or removing the signal. This makes it ideal for controlling high power and/or high current circuits, often with very low power signals.

The S2008VS3 is a thyristor specifically designed to meet needs of high power and high power density applications. It is designed as a three-pin SCR type, and it has a bidirectional repetitive current of 8 A, with a blocking voltage of 1.5 kV. It can handle up to 10 kA of reverse avalanche current and can switch up to 176 V DC. It also has an integrated temperature sensor to monitor the device during operation. This makes it perfect for dealing with power surges and voltage spikes in high power applications.

Application Field

Due to its high blocking voltage, high continuous current rating and high reverse avalanche current capability, the S2008VS3 is ideal for use in high power and high power density applications such as:

• Power supplies
• High current switching
• DC to DC converters
• UPS systems
• Surge protectors
• Motor control
• Induction heating

Working Principle

The S2008VS3 is a thyristor type, meaning it has two basic states: forward blocking and forward conducting. In a forward blocking state, the gate voltage is lower than the anode voltage, and the gate current is blocked from flowing through the gate junction. In a forward conducting state, the gate voltage is greater than the anode voltage, and the gate current can flow through the gate junction. This causes the anode voltage to be higher than the gate voltage, and the thyristor enters its on state.

The S2008VS3 also has an integrated temperature sensor, which monitors the device during operation. When the device reaches a certain temperature, a signal is sent to the gate and the SCR switches back to its off state. This feature prevents overheating and ensures that the device is always within safe operation limits.

The S2008VS3 is designed to reduce the need for manual switching and to provide reliable, high-power control solutions with minimum maintenance. Its features make it ideal for use in high power applications, and its integrated temperature sensor ensures that the device is always operated within safe limits.

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