Allicdata Part #: | S72XS256RE0AHBH10-ND |
Manufacturer Part#: |
S72XS256RE0AHBH10 |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Cypress Semiconductor Corp |
Short Description: | IC FLASH RAM 256MIT PARALLEL |
More Detail: | FLASH, DRAM Memory IC 256Mbit Flash, 2565Mbit DDR ... |
DataSheet: | S72XS256RE0AHBH10 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | XS-R |
Part Status: | Obsolete |
Memory Type: | Non-Volatile |
Memory Format: | FLASH, RAM |
Technology: | FLASH, DRAM |
Memory Size: | 256Mbit Flash, 2565Mbit DDR DRAM |
Clock Frequency: | 108MHz |
Write Cycle Time - Word, Page: | -- |
Memory Interface: | Parallel |
Voltage - Supply: | 1.7 V ~ 1.95 V |
Operating Temperature: | -25°C ~ 85°C (TA) |
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Memory
The S72XS256RE0AHBH10 is a 256Kbit (32Kbyte) memory device. It is an integrated circuit intended for use in applications requiring high speed memory access and data retention. It has a wide range of applications in many different areas, including automotive, industrial, medical, and consumer electronics.
S72XS256RE0AHBH10 Features
- 256 Kbits (32 Kbytes) of memory
- Density of 32K x 8
- High-speed access time
- Wide temperature range
- Low power consumption
- Programmable timing parameters
- ESD protection
S72XS256RE0AHBH10 Applications
- Automotive
- On-board diagnostic systems
- Engine/system control
- Infotainment systems
- Industrial
- Industrial data acquisition and control
- Factory automation and process control
- Medical
- Real-time medical imaging systems
- Medical devices and equipment
- Consumer electronics
- Digital cameras/camcorders
- Cellular phones/PDAs
- Video game consoles
S72XS256RE0AHBH10 Working Principle
The S72XS256RE0AHBH10 is a SRAM (Static Random Access Memory) device. This means that it is a type of random access memory which stores data in an array of memory cells. These memory cells are constructed from transistors and capacitors, and they are operated using charge induced on the capacitors by a small current.
An address selector is used to determine which memory cell is currently being read/written. This selector is set by the CPU, and it monitors signals sent over the address bus. The CPU then reads/writes data to/from the selected cell. By using the address bus, multiple memory devices can be used in tandem, allowing larger amounts of memory to be accessed.
In order to increase efficiency and throughput, the S72XS256RE0AHBH10 also implements a synchronous burst mode. In this mode, data is read/written in chunks (bursts) of up to 8 words. This allows for faster data access, as the CPU does not have to wait for each word to be read/written before continuing. Additionally, the S72XS256RE0AHBH10 implements a write-back cache, which allows it to store data even when it is not connected to the CPU.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
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S72XS256RE0AHBH10 | Cypress Semi... | 0.0 $ | 1000 | IC FLASH RAM 256MIT PARAL... |
S72XS256RE0AHBH20 | Cypress Semi... | 3.72 $ | 1000 | IC FLASH RAM 256MIT PARAL... |
S72XS256RE0AHBJ20 | Cypress Semi... | 3.72 $ | 1000 | IC FLASH RAM 256MIT PARAL... |
S72XS256RE0AHBHH3 | Cypress Semi... | 4.16 $ | 1000 | IC FLASH RAM 256MIT PARAL... |
S72XS256RE0AHBJ13 | Cypress Semi... | 4.16 $ | 1000 | IC FLASH RAM 256MIT PARAL... |
S72XS256RE0AHBJH3 | Cypress Semi... | 4.57 $ | 1000 | IC FLASH RAM 256MIT PARAL... |
S72XS256RE0AHBHH0 | Cypress Semi... | 4.7 $ | 1000 | IC FLASH RAM 256MIT PARAL... |
S72XS256RE0AHBJ10 | Cypress Semi... | 4.7 $ | 1000 | IC FLASH RAM 256MIT PARAL... |
S72XS256RE0AHBH23 | Cypress Semi... | 3.23 $ | 1000 | IC FLASH RAM 256MIT PARAL... |
S72XS256RE0AHBJ23 | Cypress Semi... | 3.23 $ | 1000 | IC FLASH RAM 256MIT PARAL... |
S72XS256RE0AHBJH0 | Cypress Semi... | 5.15 $ | 1000 | IC FLASH RAM 256MIT PARAL... |
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