S72XS256RE0AHBHH3

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The S72XS256RE0AHBHH3 is a type of memory. It is a type of non-volatile memory, meaning that it can store data without the need of a constant electrical support. It is an integral part of computing systems, storing information that can be read and written to quickly access and retrieve data.

The S72XS256RE0AHBHH3 is a NOR type memory from the AX family of memory products from Toshiba. It is a high-speed, low-power flash memory with a typical read current of 10mA, a write current of 30mA, and a standby current of just 3µA. It features 64Mb of memory per device, and can support up to six devices in a single memory device package.

S72XS256RE0AHBHH3s are mainly used for embedded applications, such as in industrial control systems, factory automation equipment, and medical instrumentation. It is also used in applications where reliable, fast, and low-power memory is required, such as in PROMs, ROMs, and EPROMs. A key advantage of S72XS256RE0AHBHH3 over other types of memory is its internal memory protection, which prevents data corruption in the case of power failures.

The working principle of the S72XS256RE0AHBHH3 involves writing and erasing data using a split gate, floating gate structure and hot electron injection. The memory cells are divided into two separate compartments – one for reading data, and one for writing data. When data needs to be stored, electrons are injected into the floating gate and the data is stored in the split gate.

To read the stored data, the electrons in the floating gate are drawn out of the split gate and the data is read.To erase data, hot electrons are injected into the floating gate, and the electrons are drawn out of the split gate, erasing the data. This process is done repeatedly until the desired data is written or erased.

The S72XS256RE0AHBHH3 is a reliable, fast, and low-power memory. It is mainly used for embedded applications, such as in industrial control systems, factory automation equipment, and medical instrumentation. It works using a split gate and a hot electron injection mechanism, allowing data to be written and erased quickly and reliably.

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