S72XS256RE0AHBJH3 Allicdata Electronics
Allicdata Part #:

S72XS256RE0AHBJH3-ND

Manufacturer Part#:

S72XS256RE0AHBJH3

Price: $ 4.57
Product Category:

Integrated Circuits (ICs)

Manufacturer: Cypress Semiconductor Corp
Short Description: IC FLASH RAM 256MIT PARALLEL
More Detail: FLASH, DRAM Memory IC 256Mbit Flash, 2565Mbit DDR ...
DataSheet: S72XS256RE0AHBJH3 datasheetS72XS256RE0AHBJH3 Datasheet/PDF
Quantity: 1000
2200 +: $ 4.16008
Stock 1000Can Ship Immediately
$ 4.57
Specifications
Series: XS-R
Part Status: Active
Memory Type: Non-Volatile
Memory Format: FLASH, RAM
Technology: FLASH, DRAM
Memory Size: 256Mbit Flash, 2565Mbit DDR DRAM
Clock Frequency: 108MHz
Write Cycle Time - Word, Page: --
Memory Interface: Parallel
Voltage - Supply: 1.7 V ~ 1.95 V
Operating Temperature: -40°C ~ 85°C (TA)
Description

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Memory is an important part of computer systems and has a wide range of applications. The S72XS256RE0AHBJH3 memory is no exception. This type of memory offers a variety of advantages over other types of memory, making it a popular choice for many applications. In this article, we will discuss the application field and working principle of the S72XS256RE0AHBJH3 memory.

Application Field of the S72XS256RE0AHBJH3 Memory

The S72XS256RE0AHBJH3 memory is designed for low power computer systems and embedded systems. Its small size, low power consumption, and high speed make it an ideal choice for many different applications. For example, it is often used in mobile phones, routers, and other small electronic devices where power and space are limited. Additionally, this type of memory is also used in larger industrial computers for tasks such as data acquisition, communication and networking, and memory management.

Working Principle of the S72XS256RE0AHBJH3 Memory

The S72XS256RE0AHBJH3 memory is organized into two parts, the static random access memory (SRAM) and the dynamic random access memory (DRAM). SRAM stores data in a static way and it is faster than DRAM, but it uses more power. On the other hand, DRAM stores the data in an active form and can operate at a much lower power. The S72XS256RE0AHBJH3 memory combines these two types of memory, allowing it to be both low power and high speed.

The S72XS256RE0AHBJH3 memory is organized into a grid of cells. Each cell is composed of a static RAM cell and a dynamic RAM cell. As data is read or written to the memory, the SRAM cell stores the data and the DRAM cell writes it to the appropriate memory location. This ensures that data is written and retrieved from the memory with no data loss.

The S72XS256RE0AHBJH3 memory also supports a wide range of operations such as data accumulation, data manipulation, and multi-port access. It supports operations such as read-write cycles, write-read cycles, data reset, and sector erase. Additionally, it also supports error correction and data protection.

Conclusion

The S72XS256RE0AHBJH3 memory is a popular choice for embedded systems and low power computer systems due to its small size, low power consumption, and high speed. Its combination of SRAM and DRAM allows it to offer the best of both worlds in terms of low power and high speed. It also supports a variety of operations such as read-write cycles, write-read cycles, data reset, and sector erase. This makes it a great choice for many applications.

The specific data is subject to PDF, and the above content is for reference

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