S8519BA Allicdata Electronics
Allicdata Part #:

S8519BA-ND

Manufacturer Part#:

S8519BA

Price: $ 2.08
Product Category:

Uncategorized

Manufacturer: Panduit Corp
Short Description: 800MMW X 45 RU X 1070MMD S-TYPE
More Detail: N/A
DataSheet: S8519BA datasheetS8519BA Datasheet/PDF
Quantity: 1000
1 +: $ 1.89000
Stock 1000Can Ship Immediately
$ 2.08
Specifications
Series: *
Part Status: Active
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

What is an S8519BA? This is a type of IC or integrated circuit that is used to increase the current capacity of a circuit, while at the same time reducing the amount of heat generated by the circuit. It is designed to be used in applications such as computer systems, embedded systems, motor control systems, and more.

The S8519BA is a single gate silicon gate HEXFET power MOSFET device that is designed to provide increased current handling capabilities and improved efficiency. It has a low on-state resistance, low gate threshold voltage, low gate charge, and an improved temperature behavior. The S8519BA device is constructed with a vertical DMOS power transistor, N-channel MOSFET, and a Pt10 (0.45 μm) gate oxide technology. The DMOS MOSFETs have an optimized design to minimize on-state resistance.

The S8519BA\'s application field is quite varied and can be used in a variety of circuit designs, including switch mode power supplies, motor control systems, and pulse-width modulation systems. It can also be used in high power applications, such as audio amplifiers and RF transmitters. The device is also quite good for low-noise amplifiers, RF amplifiers, switching regulators, and DC/DC converters.

The working principle of the S8519BA is based on a field effect transistor (FET). The FET consists of a channel in which current can flow and a gate which is used to control the flow of the current. With the application of a voltage to the gate, the voltage causes the current to increase or decrease. The amount of current through the channel is determined by the differential between the gate and source voltage.

One of the advantages of a FET over a BJT is that the FET has a lower turn-on voltage, and a higher gate charge. This means that the switch can be used to quickly change the voltage on both sides of the transistor, allowing for fast switching applications. The other advantage of a FET is that it has a higher gate resistance than a BJT, which means that it can better withstand large voltage swings.

The S8519BA also features a low-side current sensor, which is used to monitor the current being drawn from an external power source. This is useful for determining the amount of current when operating in high-side mode. Additionally, the S8519BA can be used with a control system to monitor the temperature of the device, allowing for more efficient power management.

The S8519BA is a great way to increase the current capacity of a circuit, while at the same time providing improved switching efficiency. It is used in a variety of applications, from audio amplifiers to motor control systems. Its working principle centers around the use of a FET, which is able to quickly change the voltage on both sides of the device, and also provides a higher gate resistance than a BJT. In addition, the low-side current sensor and the temperature monitoring system make the S8519BA an ideal device for power management.

The specific data is subject to PDF, and the above content is for reference

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