Allicdata Part #: | S8519WS-ND |
Manufacturer Part#: |
S8519WS |
Price: | $ 1.39 |
Product Category: | Uncategorized |
Manufacturer: | Panduit Corp |
Short Description: | 800MM X 42RU X 1070MM DEEP NET-A |
More Detail: | N/A |
DataSheet: | S8519WS Datasheet/PDF |
Quantity: | 1000 |
1 +: | $ 1.26000 |
Specifications
Series: | * |
Part Status: | Active |
Description
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S8519WS is an advanced surface insulation gate field-effect transistor (MOSFET) designed by Semelab. The product is capable of very high switching speeds and high efficiency, making it a suitable choice for a variety of applications. It also features a wide temperature range, low parasitic capacitance, low power dissipation, and improved device reliability. This article will discuss the application fields and working principle of S8519WS.S8519WS has a variety of applications due to its high speed switching ability. It can be used for high frequency power switching and device protection in telecommunications, office automation, and consumer electronics when combined with other control components. It can also be used in motor control, where it is able to provide an efficient control of current and the switching of current to motors, allowing greater control over motor speed. In medical applications, the product can be used to increase the speed and accuracy of diagnostics as well as to perform precise time-shifting tasks.The S8519WS has an insulation gate field-effect (MOSFET) architecture, which enables it to operate at very high speeds and gives it excellent turn-on and turn-off switching capability. As with all field effect transistors, the device operates in three stages: the turn-on, the steady-state, and the turn-off. When the S8519WS is in the turn-on or "channel" stage, the source is connected to the drain, allowing current to flow through the channel. This is regulated by the gate voltage and the applied drain-to-source voltage (VDS). When the voltage applied to the gate is higher than the VDS, the device is in an "on" or conducting state, and current can flow freely through the channel.In the steady-state, due to the high value of VGS, the drain-to-source current (ID) is maintained at a constant level, so the device is in a linear conducting state. This is the optimal state of operation for the S8519WS, as it allows for optimal power conversion efficiency.In the turn-off stage, when the VGS is lower than the VDS, the field effect transistor is in its reverse mode and the current path is interrupted, thus turning off the device. This increases the overall efficiency of the device and improves endurance.The S8519WS offers numerous advantages compared to other MOSFET technologies. Its ultra-fast switching speeds and superior efficiency make it ideal for high frequency power switching applications. The device also features a low parasitic capacitance, which allows for a greater control over its performance. Additionally, its low power dissipation reduces power losses and ensures improved reliability.In conclusion, the S8519WS is a highly efficient and reliable field-effect transistor designed for a variety of applications. Its advanced architecture allows it to operate at very high switching speeds and achieve high power conversion efficiency. Its increased reliability, low power dissipation, and wide temperature range make it an ideal choice for a variety of applications.
The specific data is subject to PDF, and the above content is for reference
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