SBC817-40LT1G

Series:	Automotive, AEC-Q101
Packaging:	Tape & Reel (TR)
Part Status:	Active
Transistor Type:	NPN
Current - Collector (Ic) (Max):	500mA
Voltage - Collector Emitter Breakdown (Max):	45V
Vce Saturation (Max) @ Ib, Ic:	700mV @ 50mA, 500mA
Current - Collector Cutoff (Max):	100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:	250 @ 100mA, 1V
Power - Max:	300mW
Frequency - Transition:	100MHz
Operating Temperature:	-65°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	TO-236-3, SC-59, SOT-23-3
Supplier Device Package:	SOT-23-3
Base Part Number:	BC817

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Introduction

The SBC817-40LT1G (or simply SBC817) is a low power, surface mount single-transistor NPN bipolar junction transistor (BJT). It was designed for applications requiring a low input current, low offset voltage, and small package size. It is a widely used transistor type and can be found in a wide variety of electronics equipment.

Features and Uses

The SBC817-40LT1G is a low power NPN bipolar junction transistor (BJT). It has a maximum collector current of 40 mA, a maximum voltage of 50 V, and a power dissipation in the collector of 100 mW. It can operate from -65 to +150°C and has a maximum junction temperature of 175°C. It is an ideal choice for low current switching and amplifying operations due to its low input current, low offset voltage and small package size.The SBC817 is a widely used transistor type and can be found in a wide variety of electronics equipment, such as amplifiers, voltage comparators, low frequency power supplies, static relays, as well as automotive and consumer electronics.

Working Principle

The SBC817-40LT1G is an NPN transistor, which means that it consists of three layers, two p-type layers and one n-type layer. It is a current-controlled device, which means that the current passing through the base (control) terminal controls the current passing through the collector-emitter terminals.When a small current is applied to the base terminal (control terminal), a voltage develops between the collector and the emitter terminals. This voltage, called the “forward-base voltage”, results from the current flowing from the base electrode to the collector electrode through the base-collector junction.The voltage is typically around 0.4 V but can vary due to manufacturing variations and temperature. The base-emitter voltage is typically around 0.7 V, which means that the voltage between the collector and emitter is 0.3 V.When the voltage between the collector and emitter is higher than the forward-base voltage, the transistor is said to be in the “on” state, where the current flowing through it is greater than the current flowing through the base terminal. This is known as the “inversion” mode, as the carriers are being inverted, or turned around, in the transistor.When the voltage between the collector and emitter is lower than the forward-base voltage, the transistor is said to be in the “off” state, where the current flowing through it is lower than the current flowing through the base terminal. This is known as the “non-inversion” mode, as the carriers remain in their original state and do not invert.

Conclusion

The SBC817-40LT1G is a low power, surface mount single-transistor NPN bipolar junction transistor (BJT). It has a maximum collector current of 40 mA, a maximum voltage of 50 V, and a power dissipation in the collector of 100 mW. It is an ideal choice for low current switching and amplifying operations due to its low input current, low offset voltage and small package size. It is a widely used transistor type and can be found in a wide variety of electronics equipment and can be used for a variety of applications. Its working principle is based on the properties of the base-collector and base-emitter junctions and their effects on the current flowing through them.

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