SBC857ALT1G Allicdata Electronics
Allicdata Part #:

SBC857ALT1GOSTR-ND

Manufacturer Part#:

SBC857ALT1G

Price: $ 0.04
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS PNP 45V 0.1A SOT-23
More Detail: Bipolar (BJT) Transistor PNP 45V 100mA 100MHz 300m...
DataSheet: SBC857ALT1G datasheetSBC857ALT1G Datasheet/PDF
Quantity: 6000
1 +: $ 0.04000
10 +: $ 0.03880
100 +: $ 0.03800
1000 +: $ 0.03720
10000 +: $ 0.03600
Stock 6000Can Ship Immediately
$ 0.04
Specifications
Series: Automotive, AEC-Q101
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: PNP
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 125 @ 2mA, 5V
Power - Max: 300mW
Frequency - Transition: 100MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3 (TO-236)
Description

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The SBC85ALT1G is a bipolar single device transistor built with a PNP silicon die. It has an efficient and compact design, which makes it ideal for various applications. This device is typically used for industrial and commercial applications such as power supplies, motor control, and audio circuits. It is also used in automotive, telecommunications and audio/video circuits.

The junction of the SBC85ALT1G consists of two leads where current passes through the silicon die. The leads are connected to the collector and the base electrodes. The collector terminal is where the main current passes through and the base terminal is used to control the current flow. The two leads are then connected to the gate and the emitter electrodes. The gate controls the current flow and the emitter is used to discharge the excess current.

The SBC85ALT1G has an average collector current (Ic) of 1 A and an average power dissipation (Pd) of 0.7W. It has a typical thermal resistance (Rth) of 50°C/W and a minimum breakdown voltage (Vceo) of 25V. Its forward hFE ratings range from 45 to 200, depending on its environment and its operating temperature.

The SBC85ALT1G features low input and high output capabilities. Its hFE ratings are enhanced due to its silicon die material, as well as its low Rth. Its high voltage rating also allows it to be used in a variety of circuits and applications.

The SBC85ALT1G has two operating modes: linear and switching. In its linear mode, it acts like a linear power amplifier, amplifying input signal levels. In its switching mode, it acts like a switch, turning on or off a circuit. This device is well-suited for a wide range of applications including motor control, audio/video circuits, power supplies, and telecommunications.

When using the SBC85ALT1G, it is important to ensure that it is adequately cooled and well insulated. The recommended soldering temperature is 250°C for 10 seconds. The recommended mount humidity should be at least 30%. The transistor should also be kept away from any direct heat sources.

In conclusion, the SBC85ALT1G is a versatile single bipolar transistor that is suitable for various applications such as motor control, power supplies, and audio/video circuits. Its low input and high output capabilities, as well as its high voltage rating make it an ideal choice for these applications. This device is easy to mount, operate, and maintain, allowing it to be used for a wide range of applications.

The specific data is subject to PDF, and the above content is for reference

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